Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR3045WT series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance a2 3 a1 1 IO(AV) = 30 A IFSM = 300 A k 2 GENERAL DESCRIPTION VF ≤ 0.6 V PINNING Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR3045WT series is supplied in the conventional leaded SOT429 (TO247) package. PIN SOT429 (TO247) DESCRIPTION 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) tab cathode 2 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. PBYR30 VRRM VRWM VR IO(AV) IFRM IFSM IRRM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature MAX. UNIT 40WT 45WT - 40 45 V - 40 45 V Tmb ≤ 107 ˚C - 40 45 V square wave; δ = 0.5; Tmb ≤ 124 ˚C - 30 A square wave; δ = 0.5; Tmb ≤ 124 ˚C - 30 A t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 300 330 A A - 2 A - 150 ˚C - 65 175 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb per diode both diodes in free air Rth j-a July 1998 Thermal resistance junction to mounting base Thermal resistance junction to ambient MIN. - 1 TYP. MAX. UNIT 45 1.6 1.2 - K/W K/W K/W Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR3045WT series ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS VF Forward voltage per diode IR Reverse current per diode Cd Junction capacitance IF = 20 A; Tj = 125˚C IF = 30 A; Tj = 125˚C IF = 30 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C July 1998 MIN. 2 - TYP. MAX. UNIT 0.58 0.69 0.71 0.12 15 450 0.6 0.72 0.76 1.5 30 - V V V mA mA pF Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier 15 Forward dissipation, PF (W) PBYR3045WT series PBYR3045WT Ths(max) (C) Vo = 0.36 V Rs = 0.012 Ohms 126 PBYR3045WT Reverse current, IR (mA) 100 D = 1.0 125 C 10 0.5 10 134 0.2 100 C 0.1 1 5 I tp D= 0 5 50 C 142 tp T 0.1 Tj = 25 C t T 0 0.01 150 25 10 15 20 Average forward current, IF(AV) (A) 0 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. 12 Forward dissipation, PF (W) Vo = 0.36 V Rs = 0.012 Ohms 10 4 8 140.4 4 143.6 2 146.8 0 1000 100 1 10 100 VR / V Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. PBYR3045WT Forward current, IF (A) PBYR3045CT Cd / pF Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 50 50 10000 150 15 5 10 Average forward current, IF(AV) (A) 25 Reverse voltage, VR (V) Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj PBYR3045WT Tmb(max) (C) 130.8 a = 1.57 1.9 134 2.2 2.8 137.2 6 0 75 C 10 Transient thermal impedance, Zth j-mb (K/W) Tj = 25 C Tj = 125 C 40 1 30 typ 20 max 0.1 PD tp D= 10 T 0 0.01 0 0.2 0.4 0.6 0.8 1 Forward voltage, VF (V) 1.2 1.4 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj July 1998 1us 10us 100us tp T t 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR3045WT Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR3045WT series MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.7. SOT429 (TO247); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". July 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR3045WT series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 5 Rev 1.200