DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF591; BF593 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification NPN high-voltage transistors BF591; BF593 FEATURES PINNING • Low current (max. 150 mA) PIN • High voltage (max. 210 V). 1 emitter 2 collector, connected to mounting base 3 base APPLICATIONS DESCRIPTION • Telephone systems. handbook, halfpage DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. 2 3 1 1 2 3 Fig.1 MAM305 Simplified outline (TO-202; SOT128B) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BF591 − 210 V BF593 − 250 V BF591 − 170 V BF593 − 210 V collector-emitter voltage open base ICM peak collector current − 300 mA Ptot total power dissipation Tamb ≤ 55 °C − 1.3 W hFE DC current gain IC = 20 mA; VCE = 5 V 30 − IC = 100 mA; VCE = 6 V 30 − 1997 Jul 02 2 Philips Semiconductors Product specification NPN high-voltage transistors BF591; BF593 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER CONDITIONS collector-base voltage MIN. MAX. UNIT open emitter BF591 − 210 V BF593 − 250 V BF591 − 170 V BF593 − 210 V − 5 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − 150 mA ICM peak collector current − 300 mA IBM peak base current − 100 mA open collector Ptot total power dissipation − 1.3 W Tstg storage temperature Tamb ≤ 55 °C −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air VALUE UNIT 73 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MAX. UNIT IE = 0; VCB = 60 V − 50 nA IE = 0; VCB = 60 V; Tj = 140 °C − 1 µA − 100 nA IC = 20 mA; VCE = 5 V 30 − IC = 100 mA; VCE = 6 V 30 − IC = 150 mA; VCE = 7 V 20 − IEBO emitter cut-off current IC = 0; VEB = 5 V hFE DC current gain note 1 Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01. 1997 Jul 02 MIN. 3 Philips Semiconductors Product specification NPN high-voltage transistors BF591; BF593 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink, 1 mounting hole; 3 leads (in-line) SOT128B E1 c1 P P1 HE D L1 L2 L 1 2 3 bp c w M Q e1 A e E 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c c1 D E E1 e e1 HE L L1 L2(1) max P P1 Q w mm 4.6 4.4 0.8 0.6 0.65 0.5 0.56 0.46 8.6 8.4 10.1 9.9 10.4 10.0 5.08 2.54 24.2 23.8 13.3 12.2 2.4 2.0 2.5 3.8 3.6 3.9 3.7 1.7 1.5 0.25 Note 1. Plastic flash allowed within this zone OUTLINE VERSION SOT128B 1997 Jul 02 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 TO-202 4 Philips Semiconductors Product specification NPN high-voltage transistors BF591; BF593 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 02 5 Philips Semiconductors Product specification NPN high-voltage transistors BF591; BF593 NOTES 1997 Jul 02 6 Philips Semiconductors Product specification NPN high-voltage transistors BF591; BF593 NOTES 1997 Jul 02 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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