IRF IRF3704PBF

PD - 95527
IRF3704PbF
IRF3704SPbF
IRF3704LPbF
SMPS MOSFET
Applications
High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
HEXFET® Power MOSFET
l
VDSS
RDS(on) max
ID
20V
9.0mΩ
77A…
Benefits
l Ultra-Low Gate Impedance
l
Very Low RDS(on)
l
Fully Characterized Avalanche Voltage
and Current
D2Pak
IRF3704S
TO-220AB
IRF3704
TO-262
IRF3704L
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
20
± 20
77 …
64
308
87
61
0.59
-55 to + 175
V
V
A
W
W
mW/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Typ.
Max.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface „
Junction-to-Ambient„
Junction-to-Ambient (PCB mount)*
–––
0.50
–––
–––
1.73
–––
62
40
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes  through „ are on page 10
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1
7/20/04
IRF3704/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.021
6.3
9.8
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
9.0
VGS = 10V, ID = 15A ƒ
mΩ
13.5
VGS = 4.5V, ID = 12A ƒ
3.0
V
VDS = VGS, ID = 250µA
20
VDS = 16V, VGS = 0V
µA
100
VDS = 16V, VGS = 0V, TJ = 125°C
200
VGS = 16V
nA
-200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
19
8.1
6.4
16
8.4
98
12
5.0
1996
1085
155
Max. Units
Conditions
–––
S
VDS = 10V, ID = 57A
–––
ID = 28.4A
–––
nC
VDS = 10V
–––
VGS = 4.5V ƒ
24
VGS = 0V, VDS = 10V
–––
VDD = 10V
–––
ID = 28.4A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V ƒ
–––
VGS = 0V
–––
VDS = 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
216
71
mJ
A
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
77…
–––
–––
308
––– 0.88
––– 0.82
––– 38
––– 45
––– 41
––– 50
1.3
–––
57
68
62
75
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = 35.5A, VGS = 0V ƒ
TJ = 125°C, IS = 35.5A, VGS = 0V ƒ
TJ = 25°C, IF = 35.5A, VR=20V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 35.5A, VR=20V
di/dt = 100A/µs ƒ
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IRF3704/S/LPbF
1000
VGS
TOP
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
100
3.5V
10
100
3.5V
10
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
VGS
10.0V
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
10
0.1
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
1000
TJ = 25 ° C
TJ = 175 ° C
100
V DS = 15V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
4.0
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
3.0
1
ID = 77A
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF3704/S/LPbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
2500
Ciss
2000
1500
Coss
1000
500
10
VGS , Gate-to-Source Voltage (V)
3000
ID = 28.4A
VDS = 10V
8
6
4
2
Crss
0
1
10
0
100
0
10
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
40
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
TJ = 175 ° C
100
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.5
0.8
1.1
1.4
1.7
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
QG , Total Gate Charge (nC)
2.0
100us
1ms
10
10ms
TC = 25 ° C
TJ = 175° C
Single Pulse
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF3704/S/LPbF
LIMITED BY PACKAGE
VGS
75
ID , Drain Current (A)
RD
VDS
90
D.U.T.
RG
+
-VDD
60
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
45
Fig 10a. Switching Time Test Circuit
30
VDS
15
0
90%
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
175
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.020
RDS(on) , Drain-to -Source On Resistance ( Ω)
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
IRF3704/S/LPbF
VGS = 4.5V
0.015
0.010
VGS = 10V
0.005
0
50
100
150
200
250
0.010
0.009
0.008
ID = 35.5A
0.007
0.006
4.0
300
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
600
VG
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test circuit
and Waveforms
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
tp
I AS
DRIVER
+
- VDD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
ID
11.6A
23.8A
BOTTOM 28.4A
TOP
500
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
175
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF3704/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
2
3
4- DRAIN
14.09 (.555)
13.47 (.530)
1.40 (.055)
1.15 (.045)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
3- EMITTER
4 - DRAIN
HEXFET
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
www.irf.com
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
7
IRF3704/S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 3 0 S W IT H
L O T CO D E 8 0 2 4
AS S E M B L E D O N W W 0 2 , 2 0 0 0
IN T H E AS S E M B L Y L IN E "L "
IN T E R N AT IO N AL
R E CT IF IE R
L O GO
N ote: "P " in as s em bly lin e
po s i tion in dicates "L ead-F r ee"
P AR T N U M B E R
F 53 0 S
AS S E M B L Y
L O T CO D E
D AT E CO D E
Y E AR 0 = 2 0 0 0
W E E K 02
L IN E L
OR
IN T E R N AT IO N AL
R E C T IF IE R
L O GO
AS S E M B L Y
L OT COD E
8
P AR T N U M B E R
F 530S
D AT E CO D E
P = D E S IG N AT E S L E AD -F R E E
P R O D U C T (O P T IO N AL )
Y E AR 0 = 2 0 0 0
W E E K 02
A = AS S E M B L Y S IT E CO D E
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IRF3704/S/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
AS SEMBLED ON WW 19, 1997
IN T HE ASS EMBLY LINE "C"
Note: "P" in as s embly line
pos ition indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
LOGO
ASS EMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
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PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S ITE CODE
9
IRF3704/S/LPbF
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.5 mH
RG = 25Ω, IAS = 28.4 A.
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ This is only applied to TO-220AB package
… Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/