PD-94009B
IRF7811AV
IRF7811AV
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
• 100% RG Tested
1
8
S
2
7
S
3
6
4
5
S
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
G
SO-8
A
A
D
D
D
D
Top View
DEVICE CHARACTERISTICS
The IRF7811AV has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811AV offers an extremely low combination of
Qsw & RDS(on) for reduced losses in both control and
synchronous FET applications.
IRF7811AV
11 mΩ
RDS(on)
QG
QSW
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
17 nC
6.7 nC
QOSS
8.1 nC
Absolute Maximum Ratings
Symbol
IRF7811AV
Units
Drain-to-Source Voltage
Parameter
VDS
30
V
Gate-to-Source Voltage
VGS
±20
Continuous Output Current
TA = 25°C
(VGS ≥ 4.5V)
TL = 90°C
c
T
Power Dissipation e
T
= 25°C
L = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
c
A
11.8
100
IDM
Pulsed Drain Current
A
10.8
ID
2.5
PD
TJ , TSTG
3.0
-55 to 150
IS
2.5
ISM
50
W
°C
A
Thermal Resistance
Parameter
eh
Maximum Junction-to-Lead h
Maximum Junction-to-Ambient
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Symbol
Typ
Max
RθJA
–––
50
RθJL
–––
20
Units
°C/W
1
11/01/05
IRF7811AV
Electrical Characteristics
Parameter
Drain-to-Source Breakdown Voltage
Symbol Min
V(BR)DSS 30
Typ
–––
Max Units
Conditions
–––
V VGS = 0V, ID = 250µA
d
Static Drain-to-Source On-Resistance
RDS(on)
–––
11
14
Gate Threshold Voltage
VGS(th)
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
50
µA
VDS = 30V, VGS = 0V
–––
–––
20
µA
VDS = 24V, VGS = 0V
–––
–––
100
µA
VDS = 24V, VGS = 0V, TJ = 100°C
––– ±100
nA
VGS = ± 20V
nC
VDS = 24V, ID = 15A, VGS = 5.0V
Drain-to-Source Leakage Current
IDSS
Gate-to-Source Leakage Current
IGSS
–––
Total Gate Charge, Control FET
Qg
–––
Total Gate Charge, Synch FET
Qg
–––
14
21
Pre-Vth Gate-to-Source Charge
Qgs1
–––
3.4
–––
Post-Vth Gate-to-Source Charge
Qgs2
–––
1.6
–––
Gate-to-Drain ("Miller") Charge
Qgd
–––
5.1
–––
Switch Charge (Qgs2 + Qgd)
QSW
–––
6.7
–––
Output Charge
QOSS
–––
8.1
12
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
17
26
VGS = 5.0V, VDS < 100mV
VDS = 16V, ID = 15A
VDS = 16V, VGS = 0
RG
0.5
–––
4.4
Ω
td(on)
–––
8.6
–––
ns
VDD = 16V
tr
–––
21
–––
ID = 15A
td(off)
–––
43
–––
VGS = 5.0V
10
–––
tf
–––
Input Capacitance
Ciss
–––
1801 –––
Output Capacitance
Coss
–––
723
–––
Reverse Transfer Capacitance
Crss
–––
46
–––
Fall Time
mΩ VGS = 4.5V, ID = 15A
Clamped Inductive Load
pF
VGS = 0V
VDS = 10V
Diode Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Charge
(with Parallel Schottsky)
f
f
Symbol Min
VSD
–––
Typ
Max Units
–––
1.3
V
Conditions
TJ = 25°C, IS = 15A ,VGS = 0V
d
Qrr
–––
50
–––
nC
di/dt = 700A/µs
VDD = 16V, VGS = 0V, ID = 15A
Qrr
–––
43
–––
nC
di/dt = 700A/µs , (with 10BQ040)
VDD = 16V, VGS = 0V, ID = 15A
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS =5.0V, IF = 15A.
Rθ is measured at TJ approximately 90°C
2
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2.0
6
VGS , Gate-to-Source Voltage (V)
I D = 15A
1.5
(Normalized)
RDS(on) , Drain-to-Source On Resistance
IRF7811AV
1.0
0.5
0.0
4
2
V GS = 4.5V
-60
-40
-20
0
20
40
60
80
100
120
140
0
160
0
( ° C)
T J , Junction Temperature
10
15
20
Figure 2. Gate-to-Source Voltage vs. Typical Gate Charge
3000
0.020
V GS = 0V, f = 1 MHZ
Ciss = C gs + C gd , Cds SHORTED
Crss = C gd
I D = 15A
0.018
2500
C, Capacitance(pF)
Coss = C ds + C gd
0.016
0.014
0.012
Ciss
2000
Coss
1500
1000
0.010
500
0.008
0
Crss
3.0
6.0
9.0
12.0
15.0
1
V GS, Gate -to -Source Voltage (V)
100
Figure 4. Typical Capacitance vs. Drain-to-Source Voltage
100
ISD , Reverse Drain Current (A)
100
T
J = 150 °C
10
TJ = 25 °C
1
0.1
10
V DS , Drain-to-Source Voltage (V)
Figure 3. Typical Rds(on) vs. Gate-to-Source Voltage
I D , Drain-to-Source Current (A)
5
Q G, Total Gate Charge (nC)
Figure 1. Normalized On-Resistance vs. Temperature
RDS(on) , Drain-to -Source On Resistance ( Ω)
ID = 15A
VDS = 16V
V DS = 15V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
V GS, Gate-to-Source Voltage (V)
Figure 5. Typical Transfer Characteristics
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TJ = 150 °C
10
TJ = 25 °C
1
0.1
5.0
V GS= 0 V
0.3
0.6
0.9
1.2
1.5
V SD ,Source-to-Drain Voltage (V)
Figure 6. Typical Source-Drain Diode Forward Voltage
3
IRF7811AV
Thermal Response(Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, Rectangular Pulse Duration (sec)
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
50 u
8V
5 uH
Schottky -6A
VDD
450
50 u
16Vz500mW
Repetition rate:100Hz
125nS
Mic4452BM
450
50 Ohms probe
V ds
90%
10%
Vgs
t d(on)
t d(off)
t f(v)
t r (v)
Switching Time Waveforms
Figure 8. Clamped Inductive load test diagram and switching waveform
4
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IRF7811AV
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
7
6
5
6
H
0.25 [.010]
1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
e1
6X
e
e1
C
1.27 BASIC
.025 BASIC
0.635 B ASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIMETERS
MIN
A
E
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
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5
IRF7811AV
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/05
6
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