PD - 95646 IRG4PC40KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free VCES = 600V VCE(on) typ. = 2.1V G @VGE = 15V, IC = 25A E n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 42 25 84 84 10 ±20 15 160 65 -55 to +150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. 0.24 6 (0.21) 0.77 40 Units °C/W g (oz) 7/26/04 IRG4PC40KPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage 18 Temperature Coeff. of Breakdown Voltage 0.46 2.10 Collector-to-Emitter Saturation Voltage 2.70 2.14 Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage -13 Forward Transconductance 7.0 14 Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Max. Units Conditions V VGE = 0V, IC = 250µA V VGE = 0V, IC = 1.0A V/°C VGE = 0V, IC = 1.0mA 2.6 IC = 25A VGE = 15V IC = 42A See Fig.2, 5 V IC = 25A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S VCE = 100 V, IC = 25A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 2000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 n A VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets t sc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time t d(on) tr t d(off) tf E ts LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 10 Typ. 120 16 51 30 15 140 140 0.62 0.33 0.95 30 18 190 150 1.9 13 1600 130 55 Max. Units Conditions 180 IC = 25A 24 nC VCC = 400V See Fig.8 77 VGE = 15V TJ = 25°C ns 210 IC = 25A, VCC = 480V 210 VGE = 15V, RG = 10Ω Energy losses include "tail" mJ See Fig. 9,10,14 1.4 µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V TJ = 150°C, IC = 25A, VCC = 480V ns VGE = 15V, RG = 10Ω Energy losses include "tail" mJ See Fig. 11,14 nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by Repetitive rating; pulse width limited by maximum VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, Pulse width ≤ 80µs; duty factor ≤ 0.1%. max. junction temperature. ( See fig. 13b ) (See fig. 13a) 2 junction temperature. Pulse width 5.0µs, single shot. www.irf.com IRG4PC40KPbF 60 For both: Triangular wave: Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified Clamp voltage: 80% of rated Load Current (A) Power Dissipation = 35W 40 Square wave: 60% of rated voltage 20 Ideal diodes A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 150 o C 10 TJ = 25 oC V GE = 15V 20µs PULSE WIDTH 1 0.1 IC , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150°C TJ = 25°C 10 V CC = 50V 5µs PULSE WIDTH A 1 1 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 10 5 7 9 11 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC40KPbF 5.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 50 40 30 20 10 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 50 A 4.0 3.0 IC = 25 A IC =12.5 A 2.0 1.0 -60 -40 -20 TC , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC40KPbF 3000 VGE , Gate-to-Emitter Voltage (V) 2500 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 2000 Cies 1500 1000 500 Coes Cres 0 1 10 16 12 8 4 0 100 0 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 10 V CC = 480V V GE = 15V TJ = 25 ° C 1.60 I C = 25A 1.40 1.20 1.00 0.80 20 30 40 RG , Gate Resistance (Ohm) Ω Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 40 60 80 100 120 140 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.80 10 20 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0 VCC = 400V I C = 25A 50 RG = 10Ohm Ω VGE = 15V VCC = 480V IC = 50 A IC = 25 A IC = 12.5 A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC40KPbF RG TJ VCC 4.0 VGE 1000 = 10Ohm Ω = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 5.0 VGE = 20V T J = 125 oC 100 3.0 2.0 1.0 10 SAFE OPERATING AREA 1 0.0 0 10 20 30 40 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 50 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4PC40KPbF L D.U.T. RL = VC * 50V 0 - 480V 1000V 480V 4 X IC@ 25°C 480µF 960V c d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13b - Pulsed Collector Fig. 13a - Clamped Inductive Current Test Circuit Load Test Circuit IC L Driver* D.U.T. Fig. 14a - Switching Loss Test Circuit VC 50V 1000V c d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5µs E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4PC40KPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INT ERNATIONAL RECT IFIER LOGO IRFPE30 56 AS S EMBLY LOT CODE 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 8 www.irf.com