IRF SI4410DYPBF

PD - 95168
Si4410DYPbF
l
l
l
l
l
l
HEXFET® Power MOSFET
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
Lead-Free
1
8
S
2
7
S
3
6
4
5
S
G
Description
This N-channel HEXFET® Power MOSFET is
produced using International Rectifier's advanced
HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in typical board
mount applications.
A
A
D
VDSS = 30V
D
D
RDS(on) = 0.0135Ω
D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
dv/dt
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Peak Diode Recovery dv/dt …
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
30
±10
±8.0
±50
2.5
1.6
0.02
5.0
400
± 20
-55 to + 150
V
W/°C
V/ns
mJ
V
°C
Max.
Units
50
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
09/22/04
Si4410DYPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
0.029 ––– V/°C Reference to 25°C, ID = 1mA
0.010 0.0135
VGS = 10V, ID = 10A ‚
Ω
0.015 0.020
VGS = 4.5V, ID = 5.0A ‚
––– –––
V
VDS = VGS, ID = 250µA
35 –––
S
VDS = 15V, ID = 10A
––– 1.0
VDS = 30V, VGS = 0V
µA
––– 25
VDS = 30V, VGS = 0V, TJ = 55°C
––– -100
VGS = -20V
nA
––– 100
VGS = 20V
30
45
ID = 10A
5.4 –––
nC
VDS = 15V
6.5 –––
VGS = 10V, See Fig. 10 ‚
11 –––
VDD = 25V
7.7 –––
ID = 1.0A
ns
38 –––
RG = 6.0Ω
44 –––
RD = 25Ω, ‚
1585 –––
VGS = 0V
739 –––
pF
VDS = 15V
106 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Parameter
Continuous Source Current
(Diode Conduction)ƒ
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
2.3
–––
–––
50
–––
–––
0.7
50
1.1
80
A
V
ns
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.3A, VGS = 0V ‚
TJ = 25°C, IF = 2.3A
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ When mounted on FR4 Board, t ≤10 sec
2
„ Starting TJ = 25°C, L = 8.0mH
R G = 25Ω, IAS = 10A. (See Figure 15)
… ISD ≤2.3A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
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Si4410DYPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
100
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
4.5V
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
100
V DS = 25V
20µs PULSE WIDTH
8
12
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
10
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = -55°C
20µs PULSE WIDTH
TJ = 150 °C
10
0.1
100
VDS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
16
A
10A
ID = 11A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
Si4410DYPbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
2000
Ciss
1600
1200
Coss
800
400
20
VGS , Gate-to-Source Voltage (V)
2400
ID = 10A
VDS = 24V
VDS = 15V
16
12
8
4
Crss
0
1
10
0
100
0
10
VDS , Drain-to-Source Voltage (V)
100
40
50
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
100
TJ = 150 ° C
TJ = 25 ° C
1
10us
100us
10
1ms
0.1
0.4
V GS = 0 V
0.5
0.6
0.7
0.8
0.9
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
QG , Total Gate Charge (nC)
1.0
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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Si4410DYPbF
8.0
80
Power ( W)
100
ID , Drain Current (A)
10.0
6.0
4.0
60
40
20
2.0
0.0
25
50
75
100
125
150
0
0.01
0.1
1
TC , Case Temperature ( ° C)
10
A
100
Time (sec)
Fig 10. Typical Power Vs. Time
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
PDM
t1
0.1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.20
0.16
0.12
0.08
VGS = 10V
VGS = 4.5V
0.04
0.00
A
0
10
20
30
40
50
R DS(on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to-Source On Resistance (Ω)
Si4410DYPbF
0.03
0.02
I D = 10A
0.01
0.00
3
Fig 12. Typical On-Resistance Vs. Drain
Current
7
8
9
1000
EAS , Single Pulse Avalanche Energy (mJ)
V GS(th) , Variance ( V)
6
2.5
I D =250µA
2.0
A
-40
-20
0
20
40
60
80
10
A
Fig 13. Typical On-Resistance Vs. Gate
Voltage
3.0
100 120 140 160
TJ , Junction Temperature (°C)
Fig 14. Typical Threshold Voltage Vs.Temperature
6
5
V GS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
1.5
-60
4
TOP
800
BOTTOM
ID
4.5A
8.0A
10A
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 15. Maximum Avalanche Energy
Vs. Drain Current
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Si4410DYPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
7
6
5
6
H
E
0.25 [.010]
1
2
3
A
4
e
e1
MAX
MIN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B AS IC
.025 B AS IC
C
1.27 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILL IME T E RS
MIN
e1
6X
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOT PRINT
NOT E S :
1. DIME NS IONING & T OLE RANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIME NS ION: MILLIMET E R
3. DIME NS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONF ORMS T O JEDE C OUT LINE MS -012AA.
5 DIME NS ION DOES NOT INCLUDE MOLD PROT RU S IONS .
MOLD PROT RUS IONS NOT T O E XCEED 0.15 [.006].
6 DIME NS ION DOES NOT INCLUDE MOLD PROT RU S IONS .
MOLD PROT RUS IONS NOT T O E XCEED 0.25 [.010].
6.46 [.255]
7 DIME NS ION IS T HE LE NGT H OF LEAD F OR S OLDE RING T O
A S U BS T RAT E .
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
E XAMPLE : T HIS IS AN IRF 7101 (MOS F E T )
INT E RNAT IONAL
RE CT IF IE R
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPT IONAL)
Y = L AS T DIGIT OF T HE YE AR
WW = WE E K
A = AS S E MB L Y S IT E CODE
L OT CODE
PART NU MB E R
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7
Si4410DYPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
8
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