IRF IRF7316

PD - 9.1505B
IRF7316
l
l
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HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Fully Avalanche Rated
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
VDSS = -30V
RDS(on) = 0.058Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation …
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Symbol
Maximum
VDS
VGS
-30
± 20
-4.9
-3.9
-30
-2.5
2.0
1.3
140
-2.8
0.20
-5.0
-55 to + 150
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient…
Symbol
Limit
Units
RθJA
62.5
°C/W
8/12/04
IRF7316
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.022
0.042
0.076
–––
7.7
–––
–––
–––
–––
23
3.8
5.9
13
13
34
32
710
380
180
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.058
VGS = -10V, ID = -4.9A „
Ω
0.098
VGS = -4.5V, ID = -3.6A „
–––
V
VDS = VGS, ID = -250µA
–––
S
VDS = -15V, ID = -4.9A
-1.0
VDS = -24V, VGS = 0V
µA
-25
VDS = -24V, VGS = 0V, TJ = 55°C
100
VGS = -20V
nA
-100
VGS = 20V
34
ID = -4.9A
5.7
nC VDS = -15V
8.9
VGS = -10V, See Fig. 10 „
19
VDD = -15V
20
ID = -1.0A
ns
51
RG = 6.0Ω
48
RD = 15Ω „
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
V SD
t rr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-30
A
––– -0.78 -1.0
––– 44
66
––– 42
63
V
ns
nC
Conditions
D
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.7A, VGS = 0V ƒ
TJ = 25°C, IF = -1.7A
di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 35mH
RG = 25Ω, IAS = -2.8A.
… Surface mounted on FR-4 board, t ≤ 10sec.
ƒ ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRF7316
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
-3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
-VDS, Drain-to-Source Voltage (V)
1
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
-ISD , Reverse Drain Current (A)
-ID , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
TJ = 25°C
TJ = 150°C
10
V DS = -10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
6.0
A
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
-VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
A
1.4
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS (on) , Drain-to-Source On Resistance (Ω)
IRF7316
-4.9A
ID =-4.9A
1.5
1.0
0.5
0.0
-60 -40 -20
-10V
VGS =-10V
0
20
40
60
0.6
0.5
0.4
0.3
0.1
VGS = -10V
0.0
80 100 120 140 160
0
TJ , Junction Temperature( °C)
10
20
300
I D = -4.9A
0.04
0.00
3
6
9
12
-VGS , Gate -to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
15
A
EAS , Single Pulse Avalanche Energy (mJ)
0.12
0
A
Fig 6. Typical On-Resistance Vs. Drain
Current
0.16
0.08
30
-ID , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
RDS (on) , Drain-to-Source On Resistance (Ω)
V GS = -4.5V
0.2
ID
-1.3A
-2.2A
BOTTOM -2.8A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
150
IRF7316
VGS = 0V
f = 1 MHz
Ciss = Cgs + Cgd + Cds
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1200
1000
20
Ciss
800
Coss
600
400
Crss
200
0
1
ID = -4.9A
SHORTED
-VGS , Gate-to-Source Voltage (V)
1400
10
100
A
VDS =-15V
16
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
- V DS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7316
SO-8 Package Details
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
0.25
.0098
0.10
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
A1
8X b
0.25 [.010]
A
MAX
b
e1
6X
MILLIMETERS
MAX
A
5
INCHES
MIN
y
0.10 [.004]
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONTROLLING DIMENS ION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUTLINE CONFORMS TO JEDEC OUT LINE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
IRF7316
SO-8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
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http://www.irf.com/
Data and specifications subject to change without notice.
8/04