DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PESDxL2UM series Low capacitance double ESD protection diode Product specification 2003 Aug 05 Philips Semiconductors Product specification Low capacitance double ESD protection diode PESDxL2UM series FEATURES DESCRIPTION • Uni-directional ESD protection of two lines or bi-directional ESD protection of one line Low capacitance ESD protection diode in a three pad SOT883 leadless ultra small plastic package designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. • Reverse standoff voltage 3.3 and 5 V • Low diode capacitance • Ultra low leakage current PINNING • Leadless ultra small SOT883 surface mount package (1 × 0.6 × 0.5 mm) • Board space 1.17 mm2 PIN (approx. 10% of SOT23) DESCRIPTION 1 cathode 1 • ESD protection >15 kV 2 cathode 2 • IEC 61000-4-2; level 4 (ESD); 15 kV (air) or 8 kV (contact). 3 common anode APPLICATIONS handbook, halfpage • Cellular handsets and accessories • Portable electronics • Computers and peripherals Top view • Communication systems • Audio and video equipment. 1 2 2 3 3 1 MARKING Bottom view TYPE NUMBER PESD3V3L2UM F2 PESD5V0L2UM F1 2003 Aug 05 MLE220 MARKING CODE Fig.1 Simplified outline (SOT883) and symbol. 2 Philips Semiconductors Product specification Low capacitance double ESD protection diode PESDxL2UM series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode 8/20 µs pulse; notes 1, 2 and 3 peak pulse current Ipp PESD3V3L2UM − 3 A PESD5V0L2UM − 2.5 A Ppp peak pulse power 8/20 µs pulse; notes 1, 2 and 3 − 30 W IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 3.5 A IZSM non-repetitive peak reverse current tp = 1 ms; square pulse − 0.9 A PESD3V3L2UM − 0.8 A Ptot total power dissipation Tamb = 25 °C; note 4 − 250 mW PZSM non-repetitive peak reverse power dissipation tp = 1 ms; square pulse; see Fig.4 − 6 W PESD5V0L2UM Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C ESD electrostatic discharge IEC 61000-4-2 (contact discharge) 15 − kV HBM MIL-Std 883 10 − kV Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5. 2. Pins 1 and 3 or 2 and 3. 3. Pins 1 and 2. 4. Device mounted on standard printed-circuit board. ESD standards compliance IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact) HBM MIL-Std 883, class 3 >4 kV THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient all diodes loaded; note 1 500 K/W 290 K/W 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. 2003 Aug 05 3 UNIT one diode loaded; note 2 Notes 2. FR4 single-sided copper 1 cm2. VALUE Philips Semiconductors Product specification Low capacitance double ESD protection diode PESDxL2UM series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode − 1 1.2 V PESD3V3L2UM − − 3.3 V PESD5V0L2UM − − 5 V VF forward voltage VRWM reverse stand-off voltage IRM V(CL)R reverse leakage current PESD3V3L2UM VR = 3.3 V − 75 300 nA PESD5V0L2UM VR = 5 V − 5 25 nA clamping voltage Ipp = 1 A; notes 1 and 2 − − 8 V − − 12 V Ipp = 1 A; notes 1 and 3 − − 9 V Ipp = 3 A; notes 1 and 3 − − 13 V Ipp = 1 A; notes 1 and 2 − − 10 V Ipp = 2.5 A; notes 1 and 2 − − 13 V Ipp = 1 A; notes 1 and 3 − − 11 V Ipp = 2.5 A; notes 1 and 3 − − 15 V PESD3V3L2UM 5.32 5.6 5.88 V PESD5V0L2UM 6.46 6.8 7.14 V − 1.3 − mV/K − 2.9 − mV/K PESD3V3L2UM − − 200 Ω PESD5V0L2UM − − 100 Ω f = 1 MHz; VR = 0 − 22 28 pF f = 1 MHz; VR = 5 − 12 17 pF f = 1 MHz; VR = 0 − 16 19 pF f = 1 MHz; VR = 5 − 8 11 pF PESD5V0L2UM SZ 8/20 µs pulse Ipp = 3 A; notes 1 and 2 PESD3V3L2UM VBR IF = 200 mA breakdown voltage temperature coefficient IZ = 1 mA IZ = 1 mA PESD3V3L2UM PESD5V0L2UM rdiff Cd differential resistance IR = 1 mA diode capacitance PESD3V3L2UM PESD5V0L2UM Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5. 2. Pins 1 and 3 or 2 and 3. 3. Pins 1 and 2. 2003 Aug 05 4 Philips Semiconductors Product specification Low capacitance double ESD protection diode MLE215 10 PESDxL2UM series MLE216 26 handbook, halfpage handbook, halfpage Cd (pF) IZSM 22 (A) 18 PESD3V3L2UM 1 PESD3V3L2UM 14 PESD5V0L2UM PESD5V0L2UM 10 10−1 10−2 10−1 1 tp (ms) 6 10 1 0 2 3 4 5 VR (V) Tj = 25 °C; f = 1 MHz. Fig.2 Non-repetitive peak reverse current as a function of pulse time (square pulse). Fig.3 MLE217 102 handbook, halfpage Diode capacitance as a function of reverse voltage; typical values. MLE218 120 handbook, halfpage Ipp (%) PZSM 100 % Ipp; 8 µs (W) 80 e−t PESD3V3L2UM 10 50 % Ipp; 20 µs PESD5V0L2UM 40 1 10−2 10−1 1 tp (ms) 0 10 0 10 20 30 t (µs) 40 PZSM = VZSM x IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM. Fig.4 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). 2003 Aug 05 Fig.5 5 8/20 µs pulse waveform according to IEC 61000-4-5. Philips Semiconductors Product specification Low capacitance double ESD protection diode handbook, full pagewidth ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax PESDxL2UM series 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ note 1 1 2 D.U.T PESDxL2UM Note 1: IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω 3 vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div GND2 PESD5V0L2UM PESD3V3L2UM GND GND1 unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig.6 ESD clamping test set-up and waveforms. 2003 Aug 05 6 MLE219 Philips Semiconductors Product specification Low capacitance double ESD protection diode PESDxL2UM series PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 2003 Aug 05 REFERENCES IEC JEDEC JEITA SC-101 7 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 Philips Semiconductors Product specification Low capacitance double ESD protection diode PESDxL2UM series DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Aug 05 8 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp9 Date of release: 2003 Aug 05 Document order number: 9397 750 11644