PD-95882
IRGP4050
PDP Switch
Features
§
§
§
§
§
§
Key parameters optimized for PDP sustain &
Energy recovery applications
104A continuous collector current
rating reduces component count
High pulse current rating makes it ideal for
capacitive load circuits
Low temperature co-efficient of VCE (ON) ensures
reduced power dissipation at operating junction
temperatures
Reverse voltage avalanche rating improves the
robustness in sustain driver application
Short fall & rise times for fast switching
C
VCES = 250V
VCE(on) typ. = 1.64V
G
@VGE = 15V, IC = 30A
E
n-channel
Description
This IGBT is specifically designed for sustain & energy recovery application
in plasma display panels. This IGBT features low V CE (ON) and fast switching
times to improve circuit efficiency and reliability. Low temperature co-efficient
of VCE (ON) makes this IGBT an ideal device for PDP sustain driver application.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
c
d
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
e
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Solder Temperature Range, for 10 sec.
Max.
Units
250
104*
56
208
290
±20
1240
330
130
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Min.
Typ.
Max.
Units
RθJC
RθCS
RθJA
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Parameter
–––
–––
–––
–––
0.24
–––
0.38
–––
40
°C/W
Wt
Weight
–––
6 (0.21)
–––
g (oz.)
*Package limited to 60A.
1
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07/05/04
IRGP4050
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
f
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
Gate Threshold Voltage
Threshold Voltage temp. coefficient
gfe
ICES
Forward Transconductance
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
g
250
18
—
—
—
—
3.0
—
34
—
—
—
—
Conditions
—
—
V VGE = 0V, IC = 250µA
—
—
V VGE = 0V, IC = 1.0A
8.2
— mV/°C VGE = 0V, IC = 1mA
IC = 30A
1.64 1.90
IC = 56A
VGE = 15V
2.04 —
V
IC = 104A, TJ = 150°C See Fig. 2, 5
2.60 —
VCE = VGE, IC = 250µA
—
6.0
-11
— mV/°C VCE = VGE, IC = 0.25mA
51
—
S VCE = 100V, IC = 56A
VGE = 0V, VCE = 250V
—
250
—
2.0
µA VGE = 0V, VCE = 10V
VGE = 0V, VCE = 250V, TJ = 150°C
— 5000
— ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
ETS
td(on)
tr
td(off)
tf
ETS
LE
Cies
Coes
Cres
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
230
37
78
37
35
120
59
45
125
170
35
35
130
120
280
13
4650
480
92
350
56
120
—
—
180
89
—
—
—
—
—
—
—
—
—
—
—
—
nC
ns
Conditions
IC = 56A
VCC = 200V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 30A, VCC = 180V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 9, 10, 14
µJ
ns
µJ
nH
pF
TJ = 150°C
IC = 30A, VCC = 180V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V,
See Fig. 7
f = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES ), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a).
Repetitive rating; pulse width limited by maximum junction temperature.
Pulse width ≤ 2.5ms; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
2
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IRGP4050
140
Triangular wave:
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 73W
120
Clamp voltage:
80% of rated
Load Current ( A )
100
80
60
Square wave:
60% of rated
voltage
40
20
Ideal diodes
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
IC, Collector-to-Emitter Current (A)
IC, Collector-to-Emitter Current (A)
1000
T J = 150°C
100
10
T J = 25°C
1
V GE = 15V
20µs PULSE WIDTH
0.1
0.1
1
10
V CE, Collecto-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
100
10
T J = 150°C
1
TJ = 25°C
0.1
VCC = 50V
20µs PULSE WIDTH
0.01
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRGP4050
4.0
LIMITED BY PACKAGE
100
80
60
40
20
50
75
100
125
IC = 112A
3.0
IC = 56A
2.0
IC = 28A
0
25
VGE = 15V
80µs PULSE WIDTH
VCE , Collector-to Emitter Voltage (V)
Maximum DC Collector Current (A)
120
1.0
150
-60 -40 -20
T C , Case Temperature (°C)
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.001
τJ
0.02
0.01
R1
R1
τJ
τ1
τ1
R2
R2
τ2
R3
R3
τ3
τ2
τC
τ
τ3
Ri (°C/W) τi (sec)
0.0906 0.000350
0.0906 0.002209
0.2003
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.028536
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRGP4050
100000
VGE, Gate-to-Emitter Voltage (V)
C oes = C ce + Cgc
10000
Capacitance (pF)
16
VGS = 0V,
f = 1 MHZ
C ies = C ge + C gd, C ce SHORTED
C res = C gc
Cies
1000
Coes
100
Cres
VCES = 200V
IC = 56A
14
12
10
8
6
4
2
10
0
0
50
100
150
200
0
VCE, Collector-toEmitter-Voltage(V)
7000
TJ = 25°C
I C = 56A
1800
1600
1400
1200
4000
3000
2000
1000
800
0
5
10
15
20
25
RG, Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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30
IC = 112A
5000
1000
0
200
RG = 5.0Ω
V GE = 15V
6000
Total Swiching Losses (µJ)
Total Swiching Losses (µJ)
2000
150
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2400
2200
100
Q G, Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VCE = 200V
VGE = 15V
50
IC = 56A
IC = 28A
-55
-5
45
95
145
T J, Juntion Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRGP4050
6000
1000
Total Swiching Losses (µJ)
5000
IC, Collector-to-Emitter Current (A)
RG = 5.0Ω
TJ = 150°C
V CE= 200V
V GE = 15V
4000
3000
2000
1000
100
SAFE OPERATING AREA
10
1
0
20
40
60
80
100
IC, Collecto-to-Emitter (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
VGE = 20V
T J = 125°
120
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 12 - Turn-Off SOA
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IRGP4050
L
D.U.T.
VC *
50V
RL =
0 - 480V
1000V
c
480V
4 X I C@25°C
480µF
960V
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
Driver*
D.U.T.
VC
Test Circuit
50V
1000V
c
Fig. 14a - Switching Loss
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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7
IRGP4050
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
(;$03/( 7+,6,6$1,5)3(
:,7+$66(0%/<
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Note: "P" in assembly line
position indicates "Lead-Free"
TO-247AC
,17(51$7,21$/
5(&7,),(5
/2*2
3$57180%(5
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package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/04
8
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