DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF469; BF471 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors BF469; BF471 FEATURES • Low feedback capacitance. handbook, halfpage APPLICATIONS 2 • Intended for class-B video output stages in television receivers and for high-voltage IF output stages. 3 1 DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. PNP complements: BF470 and BF472. 1 2 3 Top view MAM254 PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to mounting base 3 base Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter − 250 V − 300 V BF469 − 250 V BF471 − 300 V − 100 mA 1.8 W BF469 BF471 VCEO MIN. collector-emitter voltage open base ICM peak collector current Ptot total power dissipation Tmb ≤ 114 °C − hFE DC current gain IC = 25 mA; VCE = 20 V 50 − Cre feedback capacitance IC = ic = 0; VCE = 30 V; f = 1 MHz − 1.8 pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 60 − MHz 1996 Dec 09 2 Philips Semiconductors Product specification NPN high-voltage transistors BF469; BF471 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BF469 − 250 V BF471 − 300 V BF469 − 250 V BF471 − 300 V − 5 V collector-emitter voltage open base VEBO emitter-base voltage open collector IC collector current (DC) − 50 mA ICM peak collector current − 100 mA IBM peak base current − 50 mA Ptot total power dissipation − 1.8 W Tstg storage temperature Tmb ≤ 114 °C −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient in free air; note 1 Rth j-mb thermal resistance from junction to mounting base VALUE UNIT 100 K/W 20 K/W Note 1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for collector lead minimum 10 × 10 mm. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 200 V − 10 nA IE = 0; VCB = 200 V; Tj = 150 °C − 10 µA nA IEBO emitter cut-off current IC = 0; VEB = 5 V − 50 hFE DC current gain IC = 25 mA; VCE = 20 V 50 − VCEsat collector-emitter saturation voltage IC = 30 mA; IB = 5 mA − 0.6 V Cre feedback capacitance IC = ic = 0; VCE = 30 V; f = 1 MHz − 1.8 pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 60 − MHz 1996 Dec 09 3 Philips Semiconductors Product specification NPN high-voltage transistors BF469; BF471 PACKAGE OUTLINE 2.7 max handbook, full pagewidth 7.8 max 3.75 3.2 3.0 2.54 max 11.1 max (1) 1.2 15.3 min 1 4.58 2 3 0.88 max 0.5 90 o 2.29 MBC076 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. Fig.2 TO-126; SOT32. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Dec 09 4 Philips Semiconductors Product specification NPN high-voltage transistors BF469; BF471 NOTES 1996 Dec 09 5 Philips Semiconductors Product specification NPN high-voltage transistors BF469; BF471 NOTES 1996 Dec 09 6 Philips Semiconductors Product specification NPN high-voltage transistors BF469; BF471 NOTES 1996 Dec 09 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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