DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BAS11; BAS12 Controlled avalanche rectifiers Product specification Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 FEATURES DESCRIPTION • Glass passivated Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating Implotec(1) technology. • High maximum operating temperature • Low leakage current • Excellent stability These packages are hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Available in ammo-pack. a k MAM196 Marking code BAS11: S11. Marking code BAS12: S12. Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM VR PARAMETER CONDITIONS MIN. MAX. BAS11 − 300 V BAS12 − 400 V BAS11 − 300 V BAS12 − 400 V − 300 V repetitive peak reverse voltage working reverse voltage continuous reverse voltage BAS11 − 400 V averaged over any 20 ms period; Ttp = 75 °C; lead length = 10 mm; see Figs 2 and 4 − 350 mA averaged over any 20 ms period; Tamb = 30 °C; PCB mounting (see Fig.8); see Figs 3 and 4 − 300 mA BAS12 IF(AV) UNIT average forward current IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax − 4 A PRRM repetitive peak reverse power dissipation t = 10 µs square wave; f = 50 Hz; Tamb = 25 °C − 75 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C 1996 Sep 26 2 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 300 mA; Tj = Tjmax; see Fig.5 − − 1.0 V IF = 300 mA; see Fig.5 − − 1.1 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA 330 − − V V BAS11 440 − − VR = VRRMmax; see Fig.6 − − 250 nA VR = VRRMmax; Tj = 125 °C; see Fig.6 − − 10 µA BAS12 IR reverse current trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.9 − − 1 µs Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.7 − 20 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 180 K/W Rth j-a thermal resistance from junction to ambient note 1 340 K/W Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.8. For more information please refer to the “General Part of associated Handbook”. 1996 Sep 26 3 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 GRAPHICAL DATA MGD293 MGD295 0.4 0.6 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 0.3 0.4 0.2 0.2 0.1 0 0 40 80 120 Lead length 10 mm. a = 1.57; VR = VRRMmax; δ = 0.5. Fig.2 0 200 160 Ttp (oC) 0 40 80 200 160 Tamb (°C) 120 Device mounted as shown in Fig.8. a = 1.57; VR = VRRMmax; δ = 0.5. Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MGD292 MGD294 0.5 5 handbook, halfpage handbook, halfpage IF (A) P (W) a=3 0.4 2.5 2 1.57 4 1.42 0.3 3 0.2 2 0.1 1 0 0 0 0.1 0.2 0.3 0.4 IF(AV)(A) 0 1 2 VF (V) 3 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.4 Solid line: Tj = 25 °C. Dotted line: Tj = 150 °C. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 Sep 26 Fig.5 4 Forward current as a function of forward voltage; maximum values. Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 MGD297 2 10halfpage handbook, MGD296 - 1 10 handbook, halfpage IR (µA) Cd (pF) 10 1 10−1 0 50 100 150 Tj (oC) 1 10−1 200 VR = VRRMmax. f = 1 MHz; Tj = 25 °C. Fig.6 Fig.7 Reverse current as a function of junction temperature; maximum values. 1 10 102 VR(V) 103 Diode capacitance as a function of reverse voltage; typical values. 50 handbook, halfpage 25 7 50 2 3 MGA200 Dimensions in mm. Fig.8 Device mounted on a printed-circuit board. 1996 Sep 26 5 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers handbook, full pagewidth BAS11; BAS12 IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) MAM057 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.9 Test circuit and reverse recovery time waveform and definition. 1996 Sep 26 6 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 PACKAGE OUTLINE 3.5 max handbook, full pagewidth 0.55 max 1.7 max 29 min 3.0 max MBC053 29 min Dimensions in mm. The marking band indicates the cathode. Fig.10 SOD91. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 26 7 Not recommended for new designs