PHILIPS BYM63

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYM63
Ripple blocking diode
Product specification
Supersedes data of December 1995
File under Discrete Semiconductors, SC01
1996 Jun 10
Philips Semiconductors
Product specification
Ripple blocking diode
BYM63
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
• High maximum operating
temperature
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
• Low leakage current
• Excellent stability
• Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
2/3 page k(Datasheet)
a
• Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
MAM104
• Available in ammo-pack.
• Also available with preformed leads
for easy insertion.
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VRRM
repetitive peak reverse voltage
VR
continuous reverse voltage
IF(AV)
average forward current
IFRM
repetitive peak forward current
CONDITIONS
MIN.
MAX.
−
300
UNIT
V
−
300
V
averaged over any 20 ms period;
Ttp = 55 °C; lead length = 10 mm;
see Fig.2; see also Fig.4
−
2.4
A
averaged over any 20 ms period;
Tamb = 65 °C;
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
−
1.0
A
Ttp = 55 °C
−
21
A
Tamb = 65 °C
−
8.5
A
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
45
A
IFSM
non-repetitive peak forward current
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
1996 Jun 10
2
Philips Semiconductors
Product specification
Ripple blocking diode
BYM63
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IF = 2 A; Tj = Tj max; see Fig.5
−
−
1.34
V
IF = 2 A; see Fig.5
−
−
2.30
V
VR = VRRMmax;
see Fig.6
−
−
10
µA
VR = VRRMmax; Tj = 165 °C;
see Fig.6
−
−
150
µA
−
−
1.5
µs
tfr
forward recovery time
when switched to IF = 5 A
in 50 ns; see Fig.9
ton
turn-on time
when switched from VF = 0 V to
VF = 3 V; measured between
10% and 90% of IF max;
see Fig.11
400
−
−
ns
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at
IR = 0.25 A; see Fig.11
−
−
150
ns
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig.7
−
65
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8.
For more information please refer to the ‘General Part of Handbook SC01.’
1996 Jun 10
3
Philips Semiconductors
Product specification
Ripple blocking diode
BYM63
GRAPHICAL DATA
MBD421
3
MBD416
2.0
handbook, halfpage
handbook, halfpage
I F(AV)
(A)
1.6
I F(AV)
(A)
lead length 10 mm
2
1.2
0.8
1
0.4
0
0
0
100
Ttp (o C)
200
0
100
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.8.
Switched mode application.
Fig.2
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
o
T amb ( C)
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MBD426
MBD430
5
200
10
handbook, halfpage
4
IF
(A)
8
3
6
2
4
1
2
P
(W)
a=3
2.5
2 1.57 1.42
0
0
0.6
0
1.2
1.8
2.4
I F(AV)(A)
0
2
VF (V)
4
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.4
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
1996 Jun 10
Fig.5
4
Forward current as a function of forward
voltage; maximum values.
Philips Semiconductors
Product specification
Ripple blocking diode
BYM63
MGC549
103
handbook, halfpage
MBD435
10 2
handbook, halfpage
IR
(µA)
Cd
(pF)
102
10
10
1
1
0
100
Tj (°C)
1
200
10 2
V R (V)
10 3
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax.
Fig.6
10
Reverse current as a function of junction
temperature; maximum values.
Fig.7
50
handbook, halfpage
Diode capacitance as a function of reverse
voltage; typical values.
MGC500
handbook, halfpage
V
F
25
100% 110%
7
50
t fr
t
IF
2
3
10%
t
MGA200
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
1996 Jun 10
Fig.9 Forward recovery time definition.
5
Philips Semiconductors
Product specification
Ripple blocking diode
BYM63
handbook, full pagewidth
3V
VF
DUT
(V)
0
50 Ω
10 Ω
100%
90%
IF
(A)
10%
0
ton
MBH530
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 10 ns.
Fig.10 Test circuit and turn-on time waveform and definition.
handbook, full pagewidth
IF
(A)
DUT
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.11 Test circuit and reverse recovery time waveform and definition.
1996 Jun 10
6
MAM057
Philips Semiconductors
Product specification
Ripple blocking diode
BYM63
PACKAGE OUTLINE
k
handbook, full pagewidth
a
1.35
max
4.5
max
28 min
5.0 max
28 min
MBC049
Dimensions in mm.
The marking band indicates the cathode.
Fig.12 SOD64.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 10
7