PHILIPS BYM357DX

Philips Semiconductors
Product specification
Damper-Modulator
fast, high-voltage
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling
performance
• Isolated mounting tab
BYM357DX
SYMBOL
modulator
QUICK REFERENCE DATA
damper
1
3
2
GENERAL DESCRIPTION
Combined damper and modulator
diodes in an isolated plastic
envelope for horizontal deflection in
colour TV and PC monitors.
The BYM357DX contains diodes
with performance characteristics
designed specifically for
applications from 16kHz to 70kHz
DAMPER
MODULATOR
VR=1500 V
VR=600 V
VF ≤ 1.3 V
VF ≤ 1.03 V
IF(RMS) =15.7 A
IF(peak) = 7 A
IFSM ≤ 60 A
IFSM ≤ 70 A
trr ≤ 300 ns
trr ≤ 60 ns
PINNING
PIN
SOT399
DESCRIPTION
1
modulator anode.
2
common anode/cathode
3
damper cathode
case
1 2 3
The BYM357DX series is supplied
in the conventional leaded SOT399
package.
LIMITING VALUES
Tj = 25 ˚C unless otherwise stated
DAMPER
SYMBOL
PARAMETER
VRSM
MIN
MAX
MIN
MAX
UNIT
-
1500
-
600
V
VRRM
Peak non-repetitive reverse
voltage.
Peak repetitive reverse voltage
-
1500
-
600
V
VRWM
Crest working reverse voltage
-
1300
-
600
V
IF(peak)
Peak forward current
31-70kHz monitor
-
7
-
7
A
IF(RMS)
RMS forward current
sinusoidal;a=1.57
-
15.7
-
14.1
A
IFSM
Peak non-repetitive forward
current
t = 10ms
t = 8.3 ms
sinusoidal;
with reapplied
VRWM(MAX)
-
60
66
-
70
77
A
A
Tstg
TJ
Storage temperature
Operating junction temperature
-40
-
150
150
-40
-
150
150
˚C
˚C
February 2000
CONDITIONS
MODULATOR
1
Rev 1.100
Philips Semiconductors
Product specification
Damper-Modulator
fast, high-voltage
BYM357DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
MAX.
UNIT
-
-
2500
V
-
22
-
pF
THERMAL RESISTANCES
DAMPER
MODULATOR
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
TYP.
MAX.
UNIT
Rth j-hs
Thermal resistance junction to
heatsink
with heatsink
compound
-
3.5
-
4
K/W
Rth j-a
Thermal resistance junction to
ambient
in free air.
32
-
32
-
K/W
STATIC CHARACTERISTICS OF DAMPER
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
TYP
MAX.
UNIT
VF
Forward voltage
IR
Reverse current
IF = 6.5 A
IF = 6.5 A; Tj = 125˚C
VR = VRWM
VR = VRWM
Tj = 100 ˚C
1.1
1.05
10
50
1.45
1.3
250
500
V
V
µA
µA
STATIC CHARACTERISTICS OF MODULATOR
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
TYP
MAX.
UNIT
VF
Forward voltage
IF = 8 A
IF = 8 A; Tj = 125˚C
IF = 20 A
1.05
0.9
1.3
1.25
1.03
1.45
V
V
V
IR
Reverse current.
VR = VRWM
VR = VRWM
Tj = 100 ˚C
10
100
50
350
µA
µA
February 2000
2
Rev 1.100
Philips Semiconductors
Product specification
Damper-Modulator
fast, high-voltage
BYM357DX
ELECTRICAL CHARACTERISTICS OF DAMPER
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
trr
Reverse recovery time
200
300
ns
Qs
Vfr
Reverse recovery charge
Peak forward recovery voltage
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 50 A/µs
2 A,30 V,20 A/µs
IF = 6.5 A;
dIF/dt = 50 A/µs
1.2
27
2.0
-
µC
V
TYP.
MAX.
UNIT
35
60
ns
3.0
5.5
A
40
3.2
70
-
nC
V
ELECTRICAL CHARACTERISTICS OF MODULATOR
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
trr
Reverse recovery time
Irrm
Peak reverse recovery current
Qs
Vfr
Reverse recovery charge
Peak forward recovery voltage
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 10 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
2 A,30 V,20 A/µs
IF = 10 A;
dIF/dt = 10 A/µs
February 2000
3
Rev 1.100
Philips Semiconductors
Product specification
Damper-Modulator
fast, high-voltage
I
dI
F
BYM357DX
I
F
F
dt
t
rr
time
time
VF
Q
I
I
R
10%
s
100%
V
fr
VF
rrm
time
Fig.4. Definition of Vfr
Fig.1. Definition of trr, Qs and Irrm
Modulator
I
dI
F
1000
F
Qs / nC
dt
10A
2A
trr
IF=2A
time
10
Qs
I
I
R
25%
25 C
150 C
100%
rrm
1
1
Fig.2. Definition of trr, Qs and Irrm
of damper.
10
10A
100
-diF / dt
10
100
Fig.5. Modulator maximum Qs at Tj = 25˚C and 150˚C
Irrm / A
100
Cd / pF
IF=10A
1
IF=1A
10
0.1
Tj = 25 C
Tj = 100 C
0.01
1
10
-dIF/dt (A/us)
1
100
1
Fig.3. Modulator maximum Irrm at Tj = 100˚C
February 2000
10
VR / V
100
1000
Fig.6. Modulator typical junction capacitance Cd at
f = 1 MHz; Tj = 25˚C
4
Rev 1.100
Philips Semiconductors
Product specification
Damper-Modulator
fast, high-voltage
10
BYM357DX
Transient thermal impedance, Zth j-hs (K/W)
10
1
1
0.1
0.1
PD
0.01
tp
D=
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV29F
D=
10us
tp
T
t
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY359
10s
Fig.10. Damper transient thermal impedance
Zth = f(tp)
BYW29
IF / A
tp
T
0.001
1us
10s
Fig.7. Modulator transient thermal impedance
Zth = f(tp)
30
PD
0.01
t
T
0.001
1us
tp
T
Transient thermal impedance, Zth j-mb (K/W)
IF / A
BY359
30
Tj=150 C
Tj=150C
Tj=25 C
Tj=25C
20
20
typ
max
10
typ
10
max
0
0.5
0
1.5
1
VF / V
0
2
0
1.0
2.0
VF / V
Fig.8. Modulator typical and maximum forward
characteristic; IF = f(VF); parameter Tj
Fig.11. Damper forward characteristic IF = f(VF);
parameter Tj
trr / ns
1000
10A
100
1A
Tj = 25 C
Tj = 150 C
10
10
-diF/dt
100
Fig.9. Modulator maximum trr measured to 25% of Irrm;
Tj = 25˚C and 150˚C
February 2000
5
Rev 1.100
Philips Semiconductors
Product specification
Damper-Modulator
fast, high-voltage
BYM357DX
MECHANICAL DATA
Dimensions in mm
5.8 max
16.0 max
Net Mass: 5.88 g
3.0
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
18.1
min
4.5
1.1
0.4 M
2
5.45
0.9 max
5.45
3.3
Fig.12. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 2000
6
Rev 1.100
Philips Semiconductors
Product specification
Damper-Modulator
fast, high-voltage
BYM357DX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
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The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 2000
7
Rev 1.100