PD-97398 HiRel TM INT-A-Pak 3, PLASTIC FULL-BRIDGE IGBT MODULE G150SPBK06P3H Product Summary Part Number VCE IC G150SPBK06P3H 600V 150A VCE(SAT) 2.3V Typ. 2.6V Max. HiRelTM INT-A-Pak 3 The HiRelTM INT-A-Pak series are isolated near hermetic power modules which combine the latest IGBT and Soft Recovery Rectifier Technology. They use both high-speed and low Vce(sat) IGBT for ultra low thermal resistance.The G150SPBK06P3H consists of six IGBTs and six FREDs in a full-bridge configuration and has an SCR inrush current limiter. Features: n Rugged, Light Weight near Hermetic Package n n n n n n n n n n with Integrated Power Terminals Gen IV IGBT Technology Soft Recovery Rectifier Diodes Ultra Low Thermal Resistance Zener Gate Protection Diodes Very Low Conduction and Switching Losses -55°C to +125°C Operation Screening to meet the intent of MIL-PRF-38534 Short Circuit Capability 2.0 Ohms Series Gate Resistor High Altitude Operation, 85,000 Feet Above Sea Level at Rated Voltage Thermal-Mechanical Specifications Parameter IGBT Thermal Resistance, Junction to Case, per Switch Symbol c Inverter Bridge Diode Thermal Resistance, Junction to Case, per Switch Regen Diode Thermal Resistance, Junction to Case, per Switch SCR Thermal Resistance, Junction to Case c c Operating Junction Temperature Range Storage Temperature Range Screw Torque - Mounting Screw Torque - Terminals Module Weight c Min Typ Max - 0.2 0.24 - 0.38 0.45 - 0.6 0.80 TJ -55 0.21 - 0.27 150 TSTG -55 - 125 T - - 26 in-lbs - - 410 g RthJC Units °C/W °C cThermal Resistance measurements are at Steady State condition. www.irf.com 1 06/03/09 G150SPBK06P3H Absolute Ratings Module Characteristics Symbol VRMS Parameter Voltage Isolation Test Conditions t = 1 min @ sea level Terminals to Case Ratings Units 2,500 V -55 to +125 °C Ratings Units (All terminals shorted together) TC TSTG Operating Case Temperature Storage Temperature IGBT Characteristics Symbol VCE(BR) Parameter Test Conditions IGBT Collector to Emitter Breakdown Voltage VGE = 0V, TJ = +25°C to +150°C 600 VCG Collector to Gate Voltage 600 VGE ICC Gate to Emitter Voltage Collector Current Continuous ICM TSC Collector Current Pulsed Short Circuit Withstand Time TJ TJ = +25°C to +150°C VGE = 15V, TC = +25°C TP = 1.0ms, TC = +25°C VCE = 400V, VGE = 15V, TJ = +150°C Operating Junction Temperature ±20 150 V A 300 10 (min) µs -55 to +150 °C Ratings Units 600 V Diode Characteristics Symbol Parameter VDRM / VRRM Max. Repetitive Peak and Off-state Voltage IF Forward Current IFM TJ Forward Surge Current Operating Junction Temperature Test Conditions TJ = +125°C TC = +25°C TP = 1.0ms, TC = +25°C c 300 c 150 A -55 to +150 °C SCR Characteristics Symbol Parameter VDRM / VRRM Max. Repetitive Peak and Off-state Voltage IT(DC) Max. Continuous Forward Current ITSM TJ Max. Peak Surge Current Operating Junction Temperature Ratings Units TJ = +25°C Test Conditions 600 V TJ = +80°C 100 1/2 Cycle @ 60Hz 500 -55 to +150 A °C cCurrent ratings apply to the free wheeling diodes and not the regen diodes 2 www.irf.com G150SPBK06P3H Static Characteristics Module Symbol RI Parameter Insulation Resistance Test Conditions Min Typ Max Units From all Pins to Case, V = 500VDC 10 - - MΩ Test Conditions Min Typ Max Units IGBT Symbol Parameter ICES Collector Current VCE = VCES, VGE = 0V - - 1.0 mA IGES Gate Leakage Current VGE = VGES, VCE = 0V - - 10 µA VGE(th) Gate-Emitter Threshold Voltage IC = 15mA, VCE = 10V 4.0 5.4 8.1 IC = 150A, VGE = 15V - 2.3 - 1.8 2.6 2.1 V IC = 75A, VGE = 15V VCE(sat) Collector-Emitter Saturation Voltage Diode Symbol VFM Parameter Diode Forward Voltage Test Conditions Min Typ Max Units Bridge Diodes, IE = 150A, VGE = 0V - 1.8 Regen Diodes, IE = 50A, VGE = 0V - - 2.1 2.4 V Test Conditions Units SCR Symbol IRRM IDRM VTM IH Parameter Min Typ Max Max. Peak Reverse Leakage Current VRRM = 600V - - 15 Max. Peak Off-state Leakage Current VDRM = 600V - - 15 Forward On-state Voltage IF = 100A - - 1.35 IF = 50A - - DC Method, Bias Condition C - 200 1.15 300 mA Holding Current mA V Dynamic Characteristics IGBT Symbol QG Parameter Test Conditions Min Typ Max Units - - 1600 Total Gate Charge VCC = 300V, IC = 150A, VGE = 15V td(on) Turn On Delay Time VCC = 300V, IC = 150A - - 1200 nC ns tr Rise Time Turn Off Delay Time VGE1 = VGE2 = 15V - - 850 ns RG = 20Ω, Turn-on - - Fall Time RG = 10Ω, Turn-off - - 2.1 300 ns td(off) tf µs Diode Symbol trr Qrr Parameter Diode Reverse Recovery Time Diode Reverse Recovery Charge www.irf.com Min Typ Max Units IE = 150A, di/dt = 300A/µs Min Test Conditions - - Bridge Diodes only - - 170 9.0 µC ns 3 G150SPBK06P3H Circuit Diagram - HiRelTM INT-A-Pak 3 A B C D C(+) Q8 SCR SC R A D6 SC R A SC R G SC R C G1 A R3 Q1 D1 2 VR5 G1B VR6 R2 Q7 D7 2 VR 3 G1C VR 4 D5 VR2 E1B E1 A Q5 R1 2 V R1 E1C RE G GR VR7 2 R4 Q6 G2 A VR8 ER R5 Q2 2 VR9 D2 Q3 G2B 2 VR 11 D3 G2C VR 12 VR1 0 E2 A R6 E2B Q4 R7 D4 2 V R13 VR14 E2C DC(-) Case Outline- HiRelTM INT-A-Pak 3 Notes: 1) All dimensions are in inches 2) Unless otherwise specified, Tolerances .XX = ±0.01, .XXX = ±0.005 4 www.irf.com G150SPBK06P3H Part numbering Nomenclature G 150 SP B IGBT Module Current Capability 150 = 150 Amps Circuit Configuration SP = Seven Plus K 06 P3 H Screening Level H = Military Grade Screened per MIL-PRF-38534 Package Type P3 = HiRelTM INT-A-Pak 3 2.84" X 5.0" X 1.0" Voltage 06 = 600V Generation IGBT / FWD Configuration B = GEN 4 / GEN 3 IGBT Speed / SC Capability K = Fast, SC Capable WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776 Data and specifications subject to change without notice. 06/2009 www.irf.com 5