PD - 91795A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) IRHNB7160 100V, N-CHANNEL ® ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7160 IRHNB3160 IRHNB4160 IRHNB8160 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.040Ω 0.040Ω 0.040Ω 0.040Ω ID 51A 51A 51A 51A SMD-3 HEXFET® International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: ! ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 51 32.5 204 300 2.4 ±20 500 51 30 7.3 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 ( for 5 sec) 3.5 (Typical ) C g For footnotes refer to the last page www.irf.com 1 12/10/01 IRHNB7160 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units 100 — — V — 0.11 — V/°C — — 2.0 16 — — — — — — — — 0.040 0.045 4.0 — 25 250 Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 310 53 110 35 150 150 200 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5300 1600 350 — — — Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA nC VGS = 12V, ID =32.5A ➃ VGS = 12V, ID =51A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 32.5A ➃ VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =51A VDS = 50V ns VDD = 50V, ID =51A VGS =12V, RG = 2.35Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nH pF Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 51 204 1.8 520 6.5 Test Conditions A V nS µC Tj = 25°C, IS = 51A, VGS = 0V ➃ Tj = 25°C, IF = 51A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 1.6 Test Conditions 0.42 °C/W — """"Soldered to a 1 inch square clad PC board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNB7160 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100 K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" ➃ On-State Resistance (TO-3) Static Drain-to-Source" ➃ On-State Resistance (SMD-3) Diode Forward Voltage" ➃ 300 - 1000K Rads (Si)2 Units Test Conditions Min Max Min Max 100 2.0 — — — — — 4.0 100 -100 25 0.040 100 1.25 — — — — — 4.5 100 -100 50 0.057 nA µA Ω VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID =32.5A — 0.040 — 0.057 Ω VGS = 12V, ID =32.5A — 1.8 — 1.8 V VGS = 0V, IS = 51A V 1. Part number IRHNB7160 2. Part numbers IRHNB3160, IRHNB4160 and IRHNB8160 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LE T MeV/(mg/cm²)) Energy (MeV) VDS(V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V Cu 28 285 43 100 100 100 80 60 Br 36.8 305 39 100 90 70 50 — 120 100 VDS 80 Cu 60 Br 40 20 0 0 -5 -10 -15 -20 -25 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNB7160 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 100 10 5.0V 20 s PULSE WIDTH TJ = 25 C 1 0.1 1 10 10 100 1 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 C 100 TJ = 150 C 10 V DS = 50V 20 s PULSE WIDTH 6 7 8 9 10 11 12 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 100 Fig 2. Typical Output Characteristics 1000 5 10 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20 s PULSE WIDTH TJ = 150 C 5.0V VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 51A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = Ciss = Crss = Coss = C, Capacitance (pF) 8000 6000 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd Ciss 4000 Coss 2000 20 VGS , Gate-to-Source Voltage (V) 10000 IRHNB7160 ID = 51A VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 Crss 0 1 10 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 VDS , Drain-to-Source Voltage (V) 40 80 120 160 200 240 280 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 I D , Drain Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100us 100 100 TJ = 150 C 10 1ms 10ms 10 TJ = 25 C 1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 3.5 TC = 25 C TJ = 150 C Single Pulse 1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNB7160 Pre-Irradiation 60 VGS 50 I D , Drain Current (A) RD VDS D.U.T. RG + -VDD 40 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.001 0.00001 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNB7160 D R IVE R L D .U .T RG + - VD D IA S VGS 20V tp TOP 1000 1 5V VD S EAS , Single Pulse Avalanche Energy (mJ) 1200 A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit BOTTOM ID 23A 32A 51A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNB7160 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L=0.38mH Peak IL = 51A, VGS =12V ➂ ISD ≤ 51A, di/dt ≤ 410A/µs, VDD ≤ 100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-3 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01 8 www.irf.com