PD - 91299D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 ® ™ RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) I D QPL Part Number 0.315Ω -14A JANSR2N7423 0.315Ω -14A JANSF2N7423 International Rectifier’s RAD-Hard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-254AA Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -14 -9.0 -56 150 1.2 ±20 500 -14 15 -41 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical ) g For footnotes refer to the last page www.irf.com 1 2/19/03 IRHM9250 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -200 — — V — -0.24 — V/°C — — -2.0 4.0 — — — — — — — — 0.315 0.33 -4.0 — -25 -250 Ω — — — — — — — — — — — — — — — — — — — 6.8 -100 100 200 45 85 60 240 225 220 — ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA nC VGS = -12V, ID = -9.0A ➃ VGS = -12V, ID = -14A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -9.0A ➃ VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -14A VDS = -100V ns VDD = -100V, ID = -14A VGS = -12V, RG = 2.35Ω V S( ) Ω BVDSS µA nA nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4200 690 160 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -14 -56 -3.6 775 7.2 Test Conditions A V nS µC Tj = 25°C, IS = -14A, V GS = 0V ➃ Tj = 25°C, IF = -14A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min Typ Max Units — — — — 0.83 — 48 0.21 — °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHM9250 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter 100K Rads(Si)1 Min BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (TO-254AA) Diode Forward Voltage ➃ 300K Rads (Si)2 Max Min Max Units Test Conditions V -200 -2.0 — — — — — -4.0 -100 100 -25 0.315 -200 -2.0 — — — — — -5.0 -100 100 -25 0.315 nA µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, I D = -1.0mA VGS = -20V VGS = 20 V VDS=-160V, VGS =0V VGS = -12V, ID =-9.0A — 0.315 — 0.315 Ω VGS = -12V, ID =-9.0A — -3.6 — -3.6 V VGS = 0V, IS = -14A 1. IRHM9250 (JANSR2N7423) 2. IRHM93250 (JANSF2N7423) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LE T MeV/(mg/cm²)) Energy (MeV) VDS(V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V Cu 28 285 43 -200 -200 -200 200 — Br 36.8 305 39 -200 -200 -160 -75 — -250 VDS -200 -150 Cu -100 Br -50 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM9250 100 Pre-Irradiation 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -5.0V 20µs PULSE WIDTH T = 25 C 10 1 -5.0V 10 1 3.0 TJ = 150 ° C V DS = -50V 20µs PULSE WIDTH Fig 3. Typical Transfer Characteristics 4 8 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 25 ° C 7 100 Fig 2. Typical Output Characteristics 100 6 ° 10 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics -VGS , Gate-to-Source Voltage (V) J 10 100 -VDS , Drain-to-Source Voltage (V) 10 20µs PULSE WIDTH T = 150 C ° J 5 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP ID = -14A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = Ciss = Crss = Coss = 6000 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd Ciss 4000 C oss 2000 Crss 0 1 10 100 20 -VGS , Gate-to-Source Voltage (V) 8000 C, Capacitance (pF) IRHM9250 ID = -14 A VDS = -160V VDS = -100V VDS = -40V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 50 -VDS , Drain-to-Source Voltage (V) 100 150 200 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R TJ = 150 ° C -II D , Drain Current (A) -ISD , Reverse Drain Current (A) DS(on) TJ = 25 ° C 10 100 1 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 3.5 100us 10 1 1ms TC = 25 ° C TJ = 150 ° C Single Pulse 10 10ms 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM9250 Pre-Irradiation 15 RD VDS VGS -ID , Drain Current (A) 12 D.U.T. RG - + 9 VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS 10% 0 25 50 75 100 TC , Case Temperature 125 150 ( °C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.01 0.0001 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D =t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM9250 EAS , Single Pulse Avalanche Energy (mJ) 1200 L VDS ID -6.3A -8.9A BOTTOM -14A TOP 1000 D .U .T RG A IA S -2 0V VGS tp VD D D R IV E R 0 .0 1 Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V .2µF .3µF -12 V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM9250 Pre-Irradiation Foot Notes: ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -50V, starting TJ = 25°C, L=5.1mH Peak IL = -14A, V GS =-12V ➂ ISD ≤ -14A, di/dt ≤ -600A/µs, VDD ≤ -200V, TJ ≤ 150°C -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with V DS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-254AA 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 2X 0.84 [.033] MAX. 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 0.36 [.014] 4.82 [.190] 3.81 [.150] 3.81 [.150] 1.14 [.045] 0.89 [.035] 3.81 [.150] 2X 2 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 3 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A B A NOT ES : 1. 2. 3. 4. 22.73 [.895] 21.21 [.835] 3 17.40 [.685] 16.89 [.665] 1.27 [.050] 1.02 [.040] A 1 3X 3.81 [.150] B 13.84 [.545] 13.59 [.535] 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] DIME NS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIME NS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONTROLLING DIMENS ION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN AS S IGNMENT S 1 = DRAIN 2 = S OURCE 3 = GAT E CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03 8 www.irf.com