IRF IRHY4130CM

PD - 91274D
IRHY7130CM
JANSR2N7380
100V, N-CHANNEL
REF: MIL-PRF-19500/614
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
®
™
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHY7130CM 100K Rads (Si)
IRHY3130CM 300K Rads (Si)
IRHY4130CM 600K Rads (Si)
IRHY8130CM 1000K Rads (Si)
RDS(on)
0.18Ω
0.18Ω
0.18Ω
0.18Ω
ID
14.4A
14.4A
14.4A
14.4A
QPL Part Number
JANSR2N7380
JANSF2N7380
JANSG2N7380
JANSH2N7380
TO-257AA
HEXFET®
International Rectifier’s RADHard
technology provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
14.4
9.1
58
75
0.6
±20
150
—
—
6.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 ( 0.063 in.(1.6mm) from case for 10s)
7.0 (Typical )
C
g
For footnotes refer to the last page
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1
12/17/01
IRHY7130CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
100
—
—
V
—
0.11
—
V/°C
—
—
2.0
2.5
—
—
—
—
—
—
—
—
0.18
0.20
4.0
—
25
250
Ω
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
50
10
20
35
75
70
60
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
960
340
85
—
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID =9.1A ➃
VGS = 12V, ID = 14.4A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 9.1A ➃
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID =14.4A
VDS = 50V
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nC
VDD = 50V, ID =14.4A
VGS =12V, RG = 7.5Ω
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
14.4
58
1.8
275
2.5
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = 14.4A, VGS = 0V ➃
Tj = 25°C, IF = 14.4A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Pre-Irradiation
Radiation Characteristics
IRHY7130CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)1
Min
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (TO-257AA)
Diode Forward Voltage ➃
300 - 1000K Rads (Si)2
Test Conditions
Units
Max
Min
Max
100
2.0
—
—
—
—
—
4.0
100
-100
25
0.18
100
1.25
—
—
—
—
—
4.5
100
-100
25
0.24
nA
—
0.18
—
0.24
Ω
VGS = 12V, ID =9.1A
—
1.8
—
1.8
V
VGS = 0V, IS = 14.4A
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=80V, VGS =0V
VGS = 12V, ID =9.1A
V
µA
Ω
1. Part number IRHY7130, (JANSR2N7380)
2. Part numbers IRHY3130 , IRHY4130 and IRHY8130 (JANSF2N7380, JANSG2N7380 and JANSH2N7380)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LE T
MeV/(mg/cm²))
Energy
(MeV)
VD S(V)
Range
(µm)
@VGS=0V
@VGS=-5V @VGS=-10V @VGS=-15V
@VGS=-20V
Cu
28
285
43
100
100
100
80
60
Br
36.8
305
39
100
90
70
50
—
120
100
VDS
80
Cu
60
Br
40
20
0
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY7130CM
100
Pre-Irradiation
5.0V
1
20µs PULSE WIDTH
T = 25 C
°
J
0.1
0.1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1
10
100
10
5.0V
1
TJ = 25 ° C
TJ = 150 ° C
10
1
V DS = 50V
20µs PULSE WIDTH
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
13
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
9
10
100
Fig 2. Typical Output Characteristics
100
7
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5
°
J
0.1
0.1
VDS , Drain-to-Source Voltage (V)
0.1
20µs PULSE WIDTH
T = 150 C
ID = 14.4A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1500
Ciss
1000
Coss
500
20
VGS , Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
IRHY7130CM
ID = 14 A
VDS = 80V
VDS = 50V
VDS = 20V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
1
10
0
100
20
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
TJ = 150 ° C
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
TJ = 25 ° C
10
100
1
V GS = 0 V
0.1
0.0
0.5
1.0
1.5
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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2.5
100us
10
1
1ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHY7130CM
Pre-Irradiation
15
RD
VDS
VGS
D.U.T.
12
I D , Drain Current (A)
RG
+
-VDD
9
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig10a. Switching Time Test Circuit
VDS
3
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.1
0.01
0.00001
0.05
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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IRHY7130CM
1 5V
L
VD S
D .U .T
RG
IA S
VGS
20V
D R IV E R
+
- VD D
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
Pre-Irradiation
400
TOP
BOTTOM
300
200
100
0
25
V (B R )D S S
ID
6.4A
9.1A
14A
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHY7130CM
Pre-Irradiation
Foot Notes:
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L=1.45mH
Peak IL = 14.4A, VGS =12V
➂ ISD ≤ 14.4A, di/dt ≤ 395A/µs,
VDD ≤ 100V, TJ ≤ 150°C
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-257AA
0.13 [.005]
A
10.66 [.420]
10.42 [.410]
3X Ø
3.81 [.150]
3.56 [.140]
5.08 [.200]
4.83 [.190]
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
3X Ø
0.88 [.035]
0.64 [.025]
Ø 0.50 [.020]
NOT ES :
1.
2.
3.
4.
DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994.
CONT ROLLING DIMENS ION: INCH.
DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
C A
3.05 [.120]
B
PIN AS S IGNMENTS
1 = DRAIN
2 = S OURCE
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/01
8
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