BAV756S; BAW56 series High-speed switching diodes Rev. 05 — 26 November 2007 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC Package configuration Configuration BAV756S SOT363 SC-88 - very small quadruple common anode/common cathode BAW56 SOT23 - TO-236AB small dual common anode BAW56M SOT883 SC-101 - leadless ultra small dual common anode BAW56S SOT363 SC-88 - very small quadruple common anode/common anode BAW56T SOT416 SC-75 - ultra small dual common anode BAW56W SOT323 SC-70 - very small dual common anode 1.2 Features n High switching speed: trr ≤ 4 ns n Low leakage current n Small SMD plastic packages n Low capacitance: Cd ≤ 2 pF n Reverse voltage: VR ≤ 90 V 1.3 Applications n High-speed switching n General-purpose switching 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit IR reverse current VR = 80 V - - 0.5 µA VR reverse voltage - - 90 V trr reverse recovery time - - 4 ns Per diode [1] [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2. Pinning information Table 3. Pin Pinning Description Simplified outline Symbol BAV756S 1 anode (diode 1) 2 cathode (diode 2) 3 common anode (diode 2 and diode 3) 4 cathode (diode 3) 5 anode (diode 4) 6 common cathode (diode 1 and diode 4) 6 5 4 1 2 3 6 5 1 2 4 3 006aab103 BAW56; BAW56T; BAW56W 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode 3 3 1 2 006aaa144 1 2 006aab099 BAW56M 1 cathode (diode 1) 2 cathode (diode 2) 1 3 common anode 2 3 3 Transparent top view 1 2 006aab099 BAW56S 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode (diode 3 and diode 4) 4 cathode (diode 3) 5 cathode (diode 4) 6 common anode (diode 1 and diode 2) BAV756S_BAW56_SER_5 Product data sheet 6 5 4 1 2 3 6 5 1 2 4 3 006aab102 © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 2 of 15 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BAV756S SC-88 plastic surface-mounted package; 6 leads SOT363 BAW56 - plastic surface-mounted package; 3 leads SOT23 BAW56M SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 BAW56S SC-88 plastic surface-mounted package; 6 leads SOT363 BAW56T SC-75 plastic surface-mounted package; 3 leads SOT416 BAW56W SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 5. Marking codes Type number Marking code[1] BAV756S A7* BAW56 A1* BAW56M S5 BAW56S A1* BAW56T A1 BAW56W A1* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VRRM repetitive peak reverse voltage - 90 V VR reverse voltage - 90 V IF forward current BAV756S Ts = 60 °C - 250 mA BAW56 Tamb ≤ 25 °C - 215 mA BAW56M Tamb ≤ 25 °C - 150 mA BAW56S Ts = 60 °C - 250 mA BAW56T Ts = 90 °C - 150 mA BAW56W Tamb ≤ 25 °C - 150 mA BAV756S_BAW56_SER_5 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 3 of 15 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter IFRM repetitive peak forward current IFSM non-repetitive peak forward current Conditions Min Max Unit - 500 mA tp = 1 µs - 4 A tp = 1 ms - 1 A - 0.5 A - 350 mW square wave [1] tp = 1 s [2] total power dissipation Ptot BAV756S Ts = 60 °C BAW56 Tamb ≤ 25 °C BAW56M Tamb ≤ 25 °C - 250 mW [3] - 250 mW - 350 mW [4] - 170 mW BAW56S Ts = 60 °C BAW56T Ts = 90 °C BAW56W Tamb ≤ 25 °C - 200 mW BAV756S Ts = 60 °C - 100 mA BAW56 Tamb ≤ 25 °C - 125 mA BAW56M Tamb ≤ 25 °C - 75 mA Per device forward current IF BAW56S Ts = 60 °C - 100 mA BAW56T Ts = 90 °C - 75 mA BAW56W Tamb ≤ 25 °C - 130 mA Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Tj = 25 °C prior to surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Reflow soldering is the only recommended soldering method. [4] Single diode loaded. 6. Thermal characteristics Table 7. Symbol Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit - - 500 K/W - - 500 K/W - - 625 K/W Per diode Rth(j-a) [1] BAW56 BAW56M BAW56W BAV756S_BAW56_SER_5 Product data sheet [2] © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 4 of 15 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes Table 7. Thermal characteristics …continued Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Min Typ Max Unit BAV756S - - 255 K/W BAW56 - - 360 K/W BAW56S - - 255 K/W BAW56T - - 350 K/W BAW56W - - 300 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA - - 1 V Per diode VF IR reverse current Cd diode capacitance trr reverse recovery time forward recovery voltage VFR [1] forward voltage IF = 150 mA - - 1.25 V VR = 25 V - - 30 nA VR = 80 V - - 0.5 µA VR = 25 V; Tj = 150 °C - - 30 µA VR = 80 V; Tj = 150 °C - - 150 µA VR = 0 V; f = 1 MHz - - 2 pF [2] - - 4 ns [3] - - 1.75 V [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [3] When switched from IF = 10 mA; tr = 20 ns. BAV756S_BAW56_SER_5 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 5 of 15 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 006aab109 103 IF (mA) mbg704 102 IFSM (A) 102 10 10 1 (1) (2) (3) (4) 1 10−1 10−1 0.2 0.6 1.0 1 1.4 102 10 103 104 tp (µs) VF (V) (1) Tamb = 150 °C Based on square wave currents. (2) Tamb = 85 °C Tj = 25 °C; prior to surge (3) Tamb = 25 °C (4) Tamb = −40 °C Fig 1. Forward current as a function of forward voltage; typical values 006aab110 102 IR (µA) 10 (1) Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values mbh191 2.5 Cd (pF) 2.0 (2) 1 1.5 10−1 (3) 10−2 1.0 10−3 0.5 10−4 (4) 10−5 0 0 20 40 60 80 100 0 5 10 VR (V) (1) Tamb = 150 °C 15 20 VR (V) 25 f = 1 MHz; Tamb = 25 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C Fig 3. Reverse current as a function of reverse voltage; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values BAV756S_BAW56_SER_5 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 6 of 15 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE V = VR + IF × RS trr t Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 1 kΩ RS = 50 Ω D.U.T. 450 Ω I V 90 % OSCILLOSCOPE VFR Ri = 50 Ω 10 % t tr t tp input signal output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005 Fig 6. Forward recovery voltage test circuit and waveforms BAV756S_BAW56_SER_5 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 7 of 15 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 9. Package outline 3.0 2.8 0.62 0.55 0.55 0.47 1.1 0.9 3 3 0.30 0.22 0.45 0.15 0.50 0.46 2.5 1.4 2.1 1.2 1.02 0.95 0.65 1 0.30 0.22 2 0.48 0.38 1.9 0.15 0.09 0.20 0.12 04-11-04 Fig 7. Package outline BAW56 (SOT23/TO-236AB) 2.2 1.8 2.2 1.35 2.0 1.15 03-04-03 Fig 8. Package outline BAW56M (SOT883/SC-101) 0.45 0.15 4 0.95 0.60 1.8 1.4 3 0.45 0.15 1.75 0.9 1.45 0.7 pin 1 index 2 3 1 0.3 0.2 0.65 Dimensions in mm 1.1 0.8 5 1 1 0.35 Dimensions in mm 6 2 2 0.25 0.10 0.30 0.15 1.3 0.25 0.10 1 Dimensions in mm 06-03-16 Fig 9. Package outline BAV756S and BAW56S (SOT363/SC-88) Dimensions in mm 04-11-04 Fig 10. Package outline BAW56T (SOT416/SC-75) 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 0.25 0.10 1.3 Dimensions in mm 04-11-04 Fig 11. Package outline BAW56W (SOT323/SC-70) BAV756S_BAW56_SER_5 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 8 of 15 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAV756S Package SOT363 Description Packing quantity 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 -215 -235 BAW56 SOT23 4 mm pitch, 8 mm tape and reel BAW56M SOT883 2 mm pitch, 8 mm tape and reel BAW56S SOT363 - -315 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 BAW56T SOT416 4 mm pitch, 8 mm tape and reel -115 -135 BAW56W SOT323 4 mm pitch, 8 mm tape and reel -115 -135 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping 11. Soldering 2.90 2.50 0.85 2 1 solder lands 1.30 3.00 0.85 2.70 solder resist solder paste 3 occupied area 0.60 (3x) Dimensions in mm 0.50 (3x) 0.60 (3x) 1.00 3.30 sot023 Fig 12. Reflow soldering footprint BAW56 (SOT23/TO-236AB) BAV756S_BAW56_SER_5 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 9 of 15 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 3.40 1.20 (2x) solder lands solder resist occupied area 2 1 4.60 4.00 1.20 3 Dimensions in mm preferred transport direction during soldering 2.80 sot023 4.50 Fig 13. Wave soldering footprint BAW56 (SOT23/TO-236AB) 1.30 R = 0.05 (12×) 0.30 R = 0.05 (12×) 0.35 (2×) 0.90 0.20 0.60 0.70 0.80 0.25 (2×) 0.30 (2×) 0.40 (2×) 0.50 (2×) 0.30 0.40 0.50 solder lands solder resist solder paste occupied area Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint BAW56M (SOT883/SC-101) BAV756S_BAW56_SER_5 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 10 of 15 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2.65 0.60 (2×) 0.40 0.90 2.10 (2×) 2.35 solder lands solder paste 0.50 (4×) solder resist occupied area 0.50 (4×) Dimensions in mm 1.20 2.40 sot363 Fig 15. Reflow soldering footprint BAV756S and BAW56S (SOT363/SC-88) 5.25 0.30 1.00 4.00 4.50 solder lands solder resist occupied area 1.15 3.75 transport direction during soldering Dimensions in mm sot363 Fig 16. Wave soldering footprint BAV756S and BAW56S (SOT363/SC-88) BAV756S_BAW56_SER_5 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 11 of 15 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2.2 0.6 1.1 0.7 2 2.0 3 0.85 1.5 0.5 (3x) 1 0.6 (3x) msa438 1.9 solder lands solder resist Dimensions in mm solder paste occupied area Fig 17. Reflow soldering footprint BAW56T (SOT416/SC-75) 2.65 0.75 1.325 1.30 solder lands 2 solder paste 0.60 2.35 0.85 (3×) 0.50 (3×) 1.90 3 solder resist occupied area 1 Dimensions in mm 0.55 (3×) 2.40 msa429 Fig 18. Reflow soldering footprint BAW56W (SOT323/SC-70) 4.60 4.00 1.15 2 3.65 2.10 3 2.70 solder lands 1 0.90 (2×) solder resist occupied area Dimensions in mm preferred transport direction during soldering msa419 Fig 19. Wave soldering footprint BAW56W (SOT323/SC-70) BAV756S_BAW56_SER_5 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 12 of 15 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 12. Revision history Table 10. Revision history Document ID Release date BAV756S_BAW56_SER_5 20071126 Modifications: Data sheet status Change notice Supersedes Product data sheet - BAV756S_2 BAW56_4 BAW56S_2 BAW56T_2 BAW56W_4 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • Legal texts have been adapted to the new company name where appropriate. Type number BAW56M added Section 1.1 “General description”: amended Table 1 “Product overview”: added Table 2 “Quick reference data”: added Table 6 “Limiting values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W change of VRRM maximum value from 85 V to 90 V • Table 6 “Limiting values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W change of VR maximum value from 75 V to 90 V • Table 8 “Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W change of IR condition VR from 75 V to 80 V for Tj = 25 °C • Table 8 “Characteristics”: for BAV756S change of IR maximum value from 2.5 µA to 0.5 µA for Tj = 25 °C • Table 8 “Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of IR maximum value from 1 µA to 0.5 µA for Tj = 25 °C • Table 8 “Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W change of IR condition VR from 75 V to 80 V for Tj = 150 °C • Table 8 “Characteristics”: for BAV756S change of IR maximum value from 60 µA to 30 µA for IR condition VR = 25 V; Tj = 150 °C • Table 8 “Characteristics”: for BAV756S change of IR maximum value from 100 µA to 150 µA for Tj = 150 °C • Table 8 “Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of IR maximum value from 50 µA to 150 µA for Tj = 150 °C • • • • Section 8 “Test information”: added Section 10 “Packing information”: added Section 11 “Soldering”: added Section 13 “Legal information”: updated BAV756S_2 19971021 Product specification - BAV756S_1 BAW56_4 20030325 Product specification - BAW56_3 BAW56S_2 19971021 Product specification - BAW56S_1 BAW56T_2 19971219 Product specification - - BAW56W_4 19990511 Product specification - BAW56W_3 BAV756S_BAW56_SER_5 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 13 of 15 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BAV756S_BAW56_SER_5 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 05 — 26 November 2007 14 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 November 2007 Document identifier: BAV756S_BAW56_SER_5