Product specification BAW56S SOT-363 Unit: mm +0.1 1.3-0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 Small plastic SMD package 0.36 High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V +0.05 0.95-0.05 Repetitive peak forward current:max. 450 mA. +0.05 0.1-0.02 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Repetitive peak reverse voltage:max. 85 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit 85 V Per diode repetitive peak forward current continuous reverse voltage continuous forward current repetitive peak forward current VRRM VR IF 75 V single diode loaded; 250 mA all diodes loaded; 100 mA 450 mA IFRM square wave; Tj = 25 non-repetitive peak forward current s 4 t = 1 ms 1 t=1 IFSM prior to surge; t=1s 0.5 Ts = 60 ; note 1 350 total power dissipation Ptot storage temperature Tstg -65 +150 Tj -65 +150 junction temperature thermal resistance from junction to ambient Rth j-a 255 A mW K/W Note 1. One or more diodes loaded. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification BAW56S Electrical Characteristics Ta = 25 Parameter Symbol forward voltage Conditions VF reverse current t rr V fr I F = 50 mA 1 I F = 150 mA 1.25 V R = 25 V 30 mV nA 1 A V R = 25 V; T j = 150 A V R = 75 V; T j = 150 50 A V R = 0; f = 1 MHz; when switched from I F = 10 mA to I R = 10 mA; R L = 100 forward recovery voltage 715 855 Unit 30 Cd reverse recovery time I F = 1 mA I F = 10 mA V R = 75 V IR diode capacitance Max 2 pF 4 ns 1.75 V ; measured at I R = 1 mA; when switched from I F = 10 mA; t r = 20 ns Marking Marking A1t http://www.twtysemi.com [email protected] 4008-318-123 2 of 2