SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP30N60 G Applications: • drives Chip Type VCE ICn Die Size Package SIGC25T60SNC 600V 30A 4.5 x 5.71 mm2 sawn on foil SIGC25T60SNC 600V 30A 4.5 x 5.71 mm2 unsawn E Ordering Code Q67041-A4667A001 Q67041-A4667A002 MECHANICAL PARAMETER: Raster size 4.5 x 5.71 Area total / active 25.7 / 21.4 Emitter pad size 2x( 2.18x1.58 ) Gate pad size mm 2 0.68 x 1.08 Thickness 100 µm Wafer size 150 mm Flat position 90 deg Max.possible chips per wafer 566 Passivation frontside Photoimide Emitter metallization 3200 nm Al Si 1% Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 7262-S, Edition 2, 28.11.2003 SIGC25T60SNC MAXIMUM RATINGS: Parameter Symbol Value Unit 600 V Collector-emitter voltage, Tj=25 °C V CE DC collector current, limited by Tjmax IC 1) A Pulsed collector current, tp limited by Tjmax Icpuls 90 A Gate emitter voltage V GE ±20 V Operating junction and storage temperature Tj, Ts t g -55 ... +150 °C 1) depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Symbol Value Conditions min. Unit typ. max. Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC =500µA 600 Collector-emitter saturation voltage VCE(sat) VGE=15V, IC =30A 1.6 2 2.5 Gate-emitter threshold voltage VGE(th) IC =700µA, VGE=VCE 3 4 5 Zero gate voltage collector current ICES VCE=600V, VGE=0V 2.2 µA Gate-emitter leakage current IGES VCE=0V, VGE=20V 120 nA V DYNAMIC CHARACTERISTICS (tested at component): Parameter Symbol Conditions Value min. typ. max. Input capacitance Ci s s V C E= 2 5 V - 1600 1920 Output capacitance Co s s V GE= 0 V - 150 180 Cr s s f =1MHz - 92 110 Reverse transfer capacitance Unit pF SWITCHING CHARACTERISTICS (tested at component), Inductive Load: Parameter Symbol Turn-on delay time t d(on) Rise time tr Turn-off delay time td(off) Conditions Value 2) typ. max. - 44 53 I C =30A - 34 40 V G E =+15/0V - 324 389 - 67 80 Tj= 1 5 0 ° C min. Unit ns V C C =400V R G = 1 1Ω Fall time tf 2) switching conditions different to 600V Standard IGBT 2, under comparable switching conditions 40% faster turnoff than Standard IGBT 2. Values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies AI PS DD HV3, L 7262-S, Edition 2, 28.11.2003 SIGC25T60SNC CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 7262-S, Edition 2, 28.11.2003 SIGC25T60SNC FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet SGP30N60 Package :TO220 Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 7262-S, Edition 2, 28.11.2003