INTEGRATED CIRCUITS DATA SHEET TEA1566 GreenChip; SMPS module Preliminary specification File under Integrated Circuits, IC11 1999 Apr 20 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 APPLICATIONS FEATURES Distinctive features • High level of integration results in 20 to 50 fewer components compared to a power supply with discrete components mains output • On-chip 600 V MOSFET • On/off function replaces expensive mains switch with functional switch 9 • Direct off-line operation (90 to 276 VAC) Vin 8 NC • On-chip 5% accurate oscillator. 7 Green features 6 • Low power consumption in off-mode (<100 mW) TEA1566 5 • On-chip efficient start-up current source giving fast start-up 4 • Burst mode stand-by (<2 W) for overall improved system efficiency 3 • Low power operation mode with lower frequency to reduce switching losses. 2 1 OOB Dem Gnd Vctrl Iref Vaux Isense Protection features • Demagnetization protection MGR691 • Cycle by cycle current limitation with programmable current trip level Fig.1 Typical flyback application. • Over voltage protection • Over temperature protection GENERAL DESCRIPTION • Safe-restart mode with reduced power for system fault conditions. The GreenChip, intended for off-line 90 to 276 VAC power supply applications, is a monolithic high voltage family of ICs that combines analog and digital circuits to implement all necessary control functions for a switched mode power supply. The functions include integrated high voltage start-up current source, voltage mode PWM control, 5% accurate trimmed oscillator, band gap derived reference voltages, comprehensive fault protection, and leading edge blanking. High level of integration leads to cost effective power supplies that are compact, weigh less, and at the same time give higher efficiency, are more reliable and simple to design. Efficient green features lead to very low power operation modes and a novel on/off function helps replace the expensive mains switch with a low cost functional switch. Highly versatile • Usable in Buck and flyback topology • Interfaces both primary and secondary side feedback. 1999 Apr 20 2 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION TEA1566S SIL9P plastic single in-line power package; 9 leads SOT131-2 TEA1566J DBS9P plastic DIL-bent-SIL power package; 9 leads (lead length12 mm) SOT157-2 BLOCK DIAGRAM handbook, full pagewidth Iref Vaux Vin 3 2 9 VAUX MANAGEMENT START-UP CURRENT SOURCE ON/OFF OOB 7 1 kΩ TEA1566 5.5 V burst mode stand-by Vctrl Dem SAMPLE AND HOLD2 DEMAGNETIZATION MANAGEMENT 6Ω OVER CURRENT PROTECTION error amplifier 6 power MOSFET Q S 4 SAMPLE AND HOLD1 driver stage R OVER TEMPERATURE PROTECTION LEADING EDGE BLANKING PWM comparator OSCILLATOR FREQUENCY CONTROL NEGATIVE CLAMP 5 8 Gnd NC Fig.2 Block diagram. 1999 Apr 20 3 1 MGR692 Isense Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 An efficient on-chip start-up circuit enables fast start-up and dissipates negligible power after start up. On-chip accurate oscillator generates a saw tooth waveform which is used by the voltage mode feedback control circuitry to generate a pulse width modulated signal for driving the gate of the power MOSFET. A novel regulation scheme is used to implement both primary and secondary side regulation to minimize external component count. Protection features like over voltage, over current, over temperature, and demagnetization protection, give comprehensive safety against system fault conditions. The GreenChip offers some advanced features that greatly enhance the efficiency of the overall system. Off-mode reduces the power consumption of the IC below 100 mW. Burst mode stand-by reduces the power consumption of the system to below 2 W. Low power operation mode reduces the operating frequency of the system, when the system is working under low load conditions, to reduce the switching losses. PINNING SYMBOL PIN DESCRIPTION Isense 1 programmable current sense resistor Vaux 2 IC supply capacitor Iref 3 reference resistor for setting internal reference currents Vctrl 4 feedback voltage for duty cycle control Gnd 5 ground Dem 6 demagnetization input signal from primary side auxiliary winding OOB 7 on/off/burst mode input signal NC 8 not connected Vin 9 MOSFET drain connection Start-up current source and Vaux management handbook, halfpage Isense 1 Vaux 2 Iref 3 Vctrl 4 Gnd 5 Dem 6 OOB 7 NC 8 Vin 9 A versatile on-chip start-up current source makes an external, highly dissipating, trickle-charge circuit unnecessary. See Fig.2 for the block diagram of the IC. The start-up current source derives power from the mains via pin Vin (drain). It supplies current (see symbols ‘Istart-low’ and ‘Istart-high’ of Chapter “Characteristics”) to charge the Vaux (IC supply) capacitor and at the same time provides current to the control circuitry of the IC. Once the Vaux capacitor is charged to its start-up voltage level (11 V), the on-chip oscillator starts oscillating and the IC starts switching the power MOSFET. Power is then supplied to the load capacitor via the secondary winding. TEA1566 MGR693 Figure 1 shows a typical flyback application diagram. The Vaux capacitor is also supplied by an auxiliary winding on the primary side. This winding is coupled to the secondary side winding supplying the output capacitor. As the output capacitor voltage increases and approaches its nominal value, the re-supply of the Vaux capacitor is done by the auxiliary winding. Figure 4 shows relevant waveforms at start-up. For successful take over of supply of Vaux capacitor by the auxiliary winding, it is important that the re-supply of Vaux capacitor starts before its voltage drops to its Under Voltage Lockout (UVLO) level of 8.05 V of the system and stops delivering power to the output. Fig.3 Pin configuration. FUNCTIONAL DESCRIPTION The GreenChip family of ICs are highly integrated, with most common PWM functions like error amplifier, oscillator, bias current generator, and band gap based reference voltage circuits fully integrated in the ICs. High level of integration leads to easy and cost effective design of power supplies.The ICs have been fabricated in a Philips proprietary high voltage BCDMOS process that enables devices of up to 720 V to be fabricated on the same chip with low voltage circuitry. 1999 Apr 20 4 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 In case of output short circuit, the Vaux capacitor is no longer supplied by the auxiliary winding and its voltage drops till it reaches the UVLO level. If the output is an open circuit, the output voltage will rise till it reaches the Over Voltage Protection (OVP) level. The IC will detect this state and stop switching. 11 V Vaux (2) 8.05 V (1) In absence of switching of the power device, the Vaux capacitor will not be re-supplied and its voltage will drop till it reaches UVLO level. Once the Vaux voltage drops to UVLO level, the start-up current source is re-activated and it charges the Vaux capacitor to its start level and the system goes through a cycle similar to the start-up cycle. t Vout Figure 5 shows the relevant waveforms during safe-restart mode. The charging current (see symbol ‘Irestart-prot’ in Chapter “Characteristics”) from the start-up circuit during the safe-restart mode is lower than the normal start-up current (see symbol ‘Istart-high’ in Chapter “Characteristics”) in order to implement a low “hiccup” duty cycle. This helps insure devices on the output secondary winding do not get destroyed during output short circuit, violating safety conditions. The start-up current source also plays a key role in implementation of burst mode stand-by (see symbol ‘Irestart-stby’ in Chapter “Characteristics”), which will be explained later. t Vgate off switching t (1) Start-up current charges capacitor Vaux. (2) Charging of capacitor Vaux is taken-over by the auxiliary winding. Fig.4 Normal start-up waveforms. handbook, full pagewidth MGR695 Vaux fault condition normal operation (1) t Vgate switching off t (1) Start-up current source charges capacitor Vaux. Fig.5 Safe-start mode waveforms. 1999 Apr 20 MGR694 5 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 Reference Oscillator All reference voltages are derived from a temperature compensated, on-chip, band gap. The band gap reference voltage is also used, together with an external resistor connected at pin Iref, to generate accurate, temperature independent, bias currents in the chip: The oscillator is used to set the switching duty cycle by comparing the oscillator ramp to the output of the error amplifier in the pulse width modulator circuit.The oscillator is fully integrated and works by charging and discharging an internal capacitor between two voltage levels to create a sawtooth waveform with a rising edge which is 80% of the oscillator cycle. This ratio is used to set a maximum switching duty cycle of 80% for the IC. The oscillator is internally trimmed to 5% accuracy. The oscillator frequency can be adjusted between 50 to 100 kHz (see symbol fosc-h-range in Chapter “Characteristics”) by changing the external reference resistor (see symbol Rref in Chapter “Characteristics”) that sets the chip bias currents. This gives additional flexibility to the power supply designer in the choice of his system components.The frequency is correlated with the value of the reference resistor Rref (see Fig.6). V REF I REF = ------------- [A] R REF The frequency of the controller is also set by the reference resistor Rref (also see Section “Oscillator”). Sample and hold GreenChip ICs employ voltage mode feedback for regulating the output voltage. In primary feedback mode, a novel sample and hold circuit is used. The sample and hold circuit works by sampling the current into pin Dem, which is related to the output voltage via Rdem, during the time that the secondary current is flowing: In Chapter “Characteristics” fosc-typical, fosc-l and fosc-h and the Rref operating resistor range are specified. a × Vout = Iref × Rdem + Vdem+ where: Vdem+ is specified in chapter “Characteristics” a = a constant determined by turn ratio of the transformer. MGR936 This sampled current information is stored on the external capacitor connected to pin Vctrl. The pulse width modulator uses this voltage information to set the duty cycle of operation for the power MOSFET. In secondary feedback, the feedback voltage is provided by an opto-coupler. low frequency (kHz) high frequency (kHz) 45 90 35 70 Pulse width modulator (1) The pulse width modulator, which is made up of an inverting error amplifier and a comparator (see Fig.2), drives the power MOSFET with a duty cycle which is inversely proportional to the voltage on pin Vctrl. In primary feedback mode, this is the voltage on the sample and hold capacitor and in secondary feedback mode, this voltage is provided by an opto-coupler. A signal from the oscillator sets a latch that turns on the power MOSFET. The latch is reset by the signal from the pulse width modulator or by the duty cycle limiting circuit. The latching PWM mode of operation prevents multiple switching of the power switch. The maximum duty cycle is set internally at 80%. (2) 25 50 30 10 20 30 RREF (kΩ) 15 40 (1) High frequency mode. (2) Low frequency mode. Fig.6 Frequency as function of the RREF value. Figure 7 shows the normal switching operation of the IC. 1999 Apr 20 55 110 handbook, halfpage 6 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 Multi frequency control Over voltage protection The oscillator is also capable of working at a lower frequency (see fosc-l in Chapter “Characteristics”). A ratio of 1 : 2.5 is maintained between high and low frequency of the oscillator. Low frequency operation is invoked if the power supply is working at or below one ninth of its peak power. By working at a lower frequency, the switching losses in the power supply are reduced. A novel scheme is used to ensure that the transfer of high to low frequency and vice versa has no effect on the regulation of the output voltage. An Over Voltage Protection (OVP) mode has been implemented in the GreenChip series. This circuit works by sensing the Vaux voltage. If the output voltage exceeds the preset voltage limit, the OVP circuit turns off the power MOSFET. With no switching of the power device, the Vaux capacitor is not re-supplied and discharges to UVLO level and the system goes into the low dissipation safe-restart mode described earlier. The system recovers from the safe-restart mode only if the OVP condition is removed. Over current protection Gate driver Cycle by cycle Over Current Protection (OCP) is provided by sensing the voltage on an external resistor which is connected to the source of the power MOSFET. The voltage on the current sense resistor, which reflects the amplitude of the primary current, is compared internally with a reference voltage using a high speed comparator. This threshold voltage is specified as Vth(Imax) in the chapter “Characteristics”. The maximum primary V th ( Imax ) (protection) current is therefore: I prot = ----------------------- [A] R sense The gate driver has a totem-pole output stage that has current sourcing capability of 120 mA and a current sink capability of 550 mA. This is to enable fast turn on and turn off of the power device for efficient operation. A lower driver source current has been chosen in order to limit the ∆V/∆t at switch-on. This is advantageous for EMI (ElectroMagnetic Interference) and reduces the current spike across Rsense. Demagnetization protection This feature guarantees discontinuous conduction mode operation for the power supply which simplifies the design of feedback control and gives faster transient response. If the power device current exceeds the current limit, the comparator trips and turns off the power device. The power device is typically turned off in 210 ns (see tD in Chapter “Characteristics”). Demagnetization protection is an additional protection feature that protects against saturation of the transformer/inductor. Demagnetization protection also protects the power supply components against excessive stresses at start-up, when all energy storage components are completely discharged. The converter is cycle by cycle protected during shorted output system fault condition due to the demagnetization protection. The value of the demagnetization resistor (Rdem) can be calculated with the formula given in Section “Sample and hold”. The availability of the current sense resistor off-chip for programming the OCP trip level increases design flexibility for the power supply designer. An off-chip current sense resistor also reduces the risk of an OCP condition being sensed incorrectly. At power MOSFET turn-on the ∆V/∆t limiters capacitance discharge current does not have to flow through the sense resistor, because this capacitor can be connected between drain and source of the power MOSFET directly. The Leading Edge Blanking (LEB) circuit works together with the OCP circuit and inhibits the operation of the OCP comparator for a short duration (see tLEB in Chapter “Characteristics”) when the power device is turned on. This ensures that the power device is not turned off prematurely due to false sensing of an OCP condition because of current spikes caused by discharge of primary-side snubber and parasitic capacitances. LEB time is not fixed and it tracks the oscillator frequency. Negative clamp The negative clamp circuit does not let the voltage on pin Dem go below −0.4 V, when the auxiliary winding voltage goes negative during the time that the power device is turned on, to ensure correct operation of the IC. 1999 Apr 20 7 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 Over temperature protection Burst mode stand-by Protection against excessive temperature is provided by an analog temperature sensing circuit that turns off the power device when the temperature exceeds typically 140 °C. Pin OOB is also used to implement the burst mode stand-by. In burst mode stand-by, the power supply goes into a special low dissipation state where it typically consumes less than 2 W of power. Figure 14 shows a flyback converter using the burst mode stand-by feature. The system enters burst mode when the microcontroller closes switches S2 and S3 on the secondary side. Switch S2 shorts the output capacitor to the voltage level of the microcontroller capacitor. The output secondary winding now supplies the microcontroller capacitor. When the voltage on the microcontroller capacitor exceeds the zener voltage (Vz) the opto-coupler is activated which sends a signal to pin OOB. In response to this signal, the IC stops switching and goes into a “hiccup” mode. On/off mode The expensive mains switch can be replaced by an in-expensive functional switch by using the on/off mode. Figure 13 shows a flyback converter configured to use the on/off mode. Depending upon the position of switch S1, either voltage close to ground or a voltage of greater than typical 2.5 V exists on pin OOB. The difference between these voltages is detected internally by the IC. The IC goes into the off-mode if the voltage is low, where it consumes a current of typical 350 µA (see Iin-off in Chapter “Characteristics”). If the voltage on pin OOB is typically 2.5 V (see Von/off in Chapter “Characteristics”), the IC goes through the start-up sequence and commences normal operation. Figure 7 shows the burst-mode operation graphically. The hiccup mode during burst mode operation differs from the hiccup in safe-restart mode during system fault. For safe restart mode, the power has to be reduced. For burst mode, sufficient power to supply the microcontroller has to be delivered. To prevent transformer rattle, the transformer peak current is reduced by a factor of 3. Burst mode stand-by operation continues till the microcontroller opens switches S2 and S3. The system then goes through the start-up sequence and commences normal switching behaviour. In Fig.14 a Mains Under Voltage Lock Out (MUVLO) function has been created using 3 resistors. Assuming that R3 is chosen very high ohmic, the GreenChip™ starts R1 operating if: V MAINS ≈ -------- × V OOB ( R1 » R2 ) R2 In this way it is assured that the power supply only starts working above a Vmains of e.g. 80 V. The bleeder current through R1 should be low (e.g. 30 µA at 300 V). 1999 Apr 20 8 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 handbook, full pagewidth Vin Vin Vdrain Vout Vaux Vgate Iaux 0 (1) burst mode VµP start up sequence normal operation over voltage protection output short circuit burst mode stand-by normal operation MGR696 (1) All negative currents are currents out the chip. Fig.7 Typical waveforms. 1999 Apr 20 9 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); unless noted all voltages are measured with respect to pin GND. SYMBOL VI(max) PARAMETER CONDITIONS maximum DC input voltage during inductive turn-off; note 1 MIN. MAX. UNIT − 600 V − 720 V 7 A ID supply current − VOOB mode detect input voltage −0.3 +14 V IOOB mode detect input current − +2 mA Idemag demagnetization input current − ±1 mA Vctrl feedback input voltage −0.3 +5 V Vlsense current sense input voltage −0.3 +5 V Iref reference input current − −1 mA Vaux auxiliary supply voltage −0.3 +18 V Tj operating junction temperature −10 +140 °C Tstg storage temperature −40 +150 °C Ves electrostatic handling voltage class 2 human body model; note 3 − 2500 V machine model; note 4 − 250 V Notes 1. Repetitive clamped inductive turn-off energy <15 mJ. 2. Single pulse avalanche energy at Tj < 25 °C: 570 mJ. 3. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ resistor. 4. Equivalent to discharging a 200 pF capacitor through a 0.75 mH coil. THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT IC controller Rth(j-a) thermal resistance from junction to ambient 70 K/W Rth(j-c) thermal resistance from junction to case 31 K/W Rth(j-a) thermal resistance from junction to ambient 37 K/W Rth(j-c) thermal resistance from junction to case 0.85 K/W Power FET QUALITY SPECIFICATION In accordance with “SNW-FQ-611 part E”. 1999 Apr 20 10 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 CHARACTERISTICS Tj = −10 to +110 °C; Vin = 300 V; Vaux = 8.6 to 13 V; RIref = 24.9 kΩ ±0.1%; all currents into the chip are positive and all currents out of the chip are negative; all voltages are measured with respect to ground. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Input voltage and current on pin 9 Vdlow minimum start drain voltage 100 − − V Iin input current normal operation 20 60 100 µA Iin(off) off mode current VOOB < 1.95 V 150 350 550 µA Start-up current source and Vaux management on pin 2 Vstart start-up voltage 10.4 11 11.6 V Vuvlo under voltage lockout 7.4 8.05 8.6 V Vhys operation voltage hysteresis Vstart-Vuvlo 2.60 2.95 3.30 V Istart(low) start-up current 0 V < Vaux < 0.5 V −270 −230 −190 µA Istart(high) start-up current 0.5 V < Vaux < Vstart −5.0 −3.0 −1.0 mA laux IC supply current in high frequency mode 7.0 7.7 8.5 mA Irestart(prot) restart current in protection mode −600 −530 −460 µA Irestart(stdby) restart current in stand-by mode −2.5 −2.1 −1.7 mA Vclamp clamp voltage level laux = 5 mA (non switching) 15 − 18 V capacitor pin Iref = 50 nF 2.37 2.47 2.57 V 16.9 24.9 33.2 kΩ Reference input on pin 3 Vref reference voltage Rref operating resistor range Oscillator fosc-l low frequency low power mode; CIREF = 50 nF 27.5 29 30.5 kHz fosc-h high frequency normal mode; CIREF = 50 nF 66 70 74 kHz δmax maximum duty cycle f = fosc-h 78 80 82 % fratio ratio fosc-h/fosc-l 2.30 2.45 2.60 fosc-h-range range of fosc-h with changing RIREF 50 70 100 kHz Vdem decreasing 50 65 80 mV 300 500 700 ns Demagnetization input on pin 6 Vth(comp) demag comparator threshold tPD propagation delay to output buffer Ibias input bias current Vdem = 65 mV −0.50(1) − −0.10(1) µA Vclamp(neg) negative clamp level Idem = −500 µA −0.45 −0.35 0 V Vclamp(pos) positive clamp level Idem = 100µA 2.3 2.6 2.9 V Sample and hold input on pin 6 Idem normal control current lref = 100 µA 90 100 110 µA lth(sh) sample threshold current % of Idem 78 83 88 % tPD propagation delay of current comparator δVdemag/δt positive 170 450 730 ns δVdemag/δt negative 20 90 160 ns 1999 Apr 20 11 Philips Semiconductors Preliminary specification GreenChip; SMPS module SYMBOL TEA1566 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Over voltage protection on pin 2 VOVP absolute maximum OVP level fixed maximum level 14.0 14.7 15.5 V td(OVP) OVP delay time 350 550 800 ns Isense and low power on pin 1 tLEB leading edge blanking time Rref = 0.7 × Rref(nom) 180 260 340 ns Rref = Rref(nom) 240 340 440 ns Rref = 1.3 × Rref(nom) 415 470 560 ns 0.46 Vth(Imax) maximum current limit voltage 0.49 0.53 V td delay to MOSFET off time to MOSFET off at dV/dt = 200 mV/µs; Cgs = 500 pF 150 210 270 ns Vth(lopower) threshold voltage for switch over to low power 155 165 175 mV gain fosc-h −95 −85 −75 %/V fosc-l −60 −50 −40 %/V Control dδ/dV VCTRL(min) minimum control voltage on pin 4 2.00 2.15 2.30 V VCTRL(max) maximum control voltage on pin 4 2.90 3.05 3.20 V ICTRL(leak) leakage current in/out on pin 4 −1 − +1 µA 130 140 155 °C note 1 Over temperature protection Ttrip temperature limit On/off/burst mode selection input on pin 7 Von/off on/off trip level Vburst burst mode trip level IOOB output current on pin OOB 2.3 2.5 2.8 V active 6.5 − 7.5 V inactive − − 5.5 V VOOB > 400 mV; note 1 −5 − -0.1 µA Power MOSFET 7N60E; note 2 VDS(break) drain-to-source breakdown voltage Tj = 25 °C; Vgs = 0 V; Id = 0.25 mA 600 − − V RDS(on) drain-to-source on-state resistance Tj = 25 °C; Vgs = 10 V; Vaux = 10 V; Id = 7A − 1.0 1.2 Ω Notes 1. Min. and max. values are guaranteed by design. 2. The power MOSFET outputs of these devices are similar to the Philips Semiconductor type PHP7N60. These devices feature an excellent combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. 1999 Apr 20 12 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 MGR937 MGR939 103 handbook, halfpage 160 handbook, halfpage P (W) Cj (pF) 120 Coss 102 80 40 0 0 40 80 10 120 160 Tcase (°C) 1 Fig.8 Normalised power derating. 102 MGR938 3 VDS (V) 103 Fig.9 Junction capacitance. MGR940 1.2 handbook, halfpage handbook, halfpage a a 2 1.1 1 1 0 −80 10 0 80 Tj (°C) 0.9 −100 160 0 100 Tj (°C) 200 a = RDS(on) / RDS(on) at 25 °C. ID = 6.2 A; Vaux > 10 V. Fig.10 Normalised drain-to-source on-state resistance. 1999 Apr 20 Fig.11 Normalised drain-to-source breakdown voltage. 13 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 handbook, full pagewidth I vc closed open L I MAX Vin Vctrl Vaux TEA1566 Dem CLAMP CIRCUIT Isense Gnd VS CURRENT SENSING CIRCUIT MGR941 VS = 50 V; IMAX = 7 A Vdem = 0.5 V; Vaux = 11 V IVC = 6 mA; VCLAMP = 720 V L = 25 mH Fig.12 Clamped inductive test circuit. The primary side auxiliary winding is connected via a resistor to pin Dem. Besides being used for demagnetization protection, pin Dem is also used for primary side regulation. APPLICATION INFORMATION A converter using the GreenChip is usually a flyback or a Buck converter that is made up of the EMI filter, full bridge rectifier, filter capacitor, transformer, output stage(s), and some snubber circuitry. Pin OBB is a multi use pin and depending upon connection can be used for implementation of the on/off/burst mode functions. Depending upon the type of feedback used, either an auxiliary winding (primary regulation) or an opto-coupler (secondary regulation) is used. GreenChip, due to its high level of integration uses very few external components. A sense resistor converts the primary current into a voltage on pin Isense. The IC uses this information for setting the peak current in the converter. Pin 8 is not connected and serves as a high voltage spacer pin. Pin Vin is the connection for the drain of the internal power MOSFET and is a high voltage pin. The internal start-up current source also uses this pin as a supply for charging up the Vaux capacitor during start-up and safe-restart modes. A capacitor supplied by an auxiliary winding buffers the internal supply of the IC and is connected on pin Vaux. GreenChip is a versatile IC that can be used in flyback and Buck converter topologies and can be configured to work in different modes. The application diagrams on the next pages give some examples. The auxiliary winding is also used for primary mode output voltage regulation. A resistor connected on pin Iref sets the reference currents in the IC. A small capacitor (0.2 to 2 nF) connected on pin Vctrl is used by the internal sample and hold circuit for regulation in primary feedback scheme. The same pin is also used for secondary sensing and serves as the input for the signal from the opto-coupler. For additional information also see: • Application note AN98011: “200 W SMPS with TEA1504” • Application note AN98058: “75 W SMPS with TEA1566”. Pin Gnd is the ground connection pin. 1999 Apr 20 14 Philips Semiconductors Preliminary specification GreenChip; SMPS module handbook, full pagewidth TEA1566 mains output 9 Vin 8 NC 7 6 ROOB S1 OOB Dem RDEM TEA1566 5 Gnd 4 3 2 1 Vctrl Iref RREF RCTRL Vaux CREF Isense CAUX RSENSE MGR697 Fig.13 Typical flyback configuration with secondary sensing and on/off feature. 1999 Apr 20 15 Philips Semiconductors Preliminary specification GreenChip; SMPS module handbook, full pagewidth TEA1566 mains output R1 S1 S2 R2 9 8 7 6 TEA1566 5 4 3 2 1 from microcontroller microcontroller supply Vin NC OOB Dem Vz Gnd R3 Vctrl Iref Vaux Isense MGR698 Fig.14 Flyback configuration using the burst mode stand-by, MUVLO and on/off features. 1999 Apr 20 16 Philips Semiconductors Preliminary specification GreenChip; SMPS module handbook, full pagewidth TEA1566 mains output 9 8 7 6 TEA1566 5 4 3 2 1 Vin NC OOB Dem Gnd Vctrl Iref Vaux Isense MGR699 Fig.15 Typical Buck configuration with primary sensing. handbook, full pagewidth mains output 9 8 7 6 TEA1566 5 4 3 2 1 Vin NC OOB Dem Gnd Vctrl Iref Vaux Isense MGR700 Fig.16 Typical Buck configuration with secondary sensing. 1999 Apr 20 17 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 PACKAGE OUTLINES SIL9P: plastic single in-line power package; 9 leads SOT131-2 non-concave Dh x D Eh view B: mounting base side d A2 seating plane B E j A1 b L c 1 9 e Z Q w M bp 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A1 max. A2 b max. bp c D (1) d Dh E (1) e Eh j L Q w x Z (1) mm 2.0 4.6 4.2 1.1 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 2.54 6 3.4 3.1 17.2 16.5 2.1 1.8 0.25 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 92-11-17 95-03-11 SOT131-2 1999 Apr 20 EUROPEAN PROJECTION 18 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12 mm) SOT157-2 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L Q c 1 v M 9 e1 Z bp e e2 m w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e mm 17.0 15.5 4.6 4.2 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 5.08 e1 e2 2.54 5.08 Eh j L L3 m Q v w x Z (1) 6 3.4 3.1 12.4 11.0 2.4 1.6 4.3 2.1 1.8 0.8 0.25 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 95-03-11 97-12-16 SOT157-2 1999 Apr 20 EUROPEAN PROJECTION 19 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 The total contact time of successive solder waves must not exceed 5 seconds. SOLDERING Introduction to soldering through-hole mount packages The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL WAVE suitable(1) suitable Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 20 20 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 NOTES 1999 Apr 20 21 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 NOTES 1999 Apr 20 22 Philips Semiconductors Preliminary specification GreenChip; SMPS module TEA1566 NOTES 1999 Apr 20 23 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 295002/50/01/pp24 Date of release: 1999 Apr 20 Document order number: 9397 750 03312