INTEGRATED CIRCUITS DATA SHEET TEA1504 GreenChip SMPS control IC Preliminary specification Supersedes data of 1998 Mar 17 File under Integrated Circuits, IC11 1999 Dec 07 Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 FEATURES GENERAL DESCRIPTION Distinctive features The GreenChip TEA1504 is intended for off-line 90 to 276 V (AC) power supply applications. It is one of a family of high voltage ICs integrating both analog and digital circuit functions for controlling a switched mode power supply (SMPS). Its functions include integrated high voltage start-up current source, voltage Pulse Width Mode (PWM) control, 5% accurate oscillator, band-gap derived reference voltages, comprehensive fault protection and leading edge blanking. Its high level of integration allows power supplies to be cost effective, compact, lightweight, highly efficient, more reliable, and simple to design. Efficient green features permit very low power operation modes, and an innovative on/off function allows an expensive mains switch to be replaced with a low-cost functional switch. • High level of integration reduces the number of components by up to 50 compared to power supply using discrete components • On/off functional switch replaces expensive mains switch • Direct off-line operation (90 to 276 V AC) • 5% accurate on-chip oscillator. Green features • Low power consumption in off-mode (<100 mW) • Fast and efficient on-chip start-up current source • Burst mode standby (<2 W) for overall improved system efficiency THE GREENCHIP FAMILY • Low power operation mode with lower frequency reduces switching losses The GreenChip family of ICs are fully integrated with most common PWM functions such as error amplifier, oscillator, bias current generator and band-gap based reference voltage circuits. The high level of integration allows easy and cost effective power supply design. The ICs are made by a Philips proprietary high voltage BCDMOS process which produces low voltage circuit devices with inputs that are able to withstand up to 720 V. • Low Overcurrent Protection (OCP) level. Protection features • Demagnetization protection • Cycle-by-cycle current limitation with programmable current trip level • Overvoltage protection • Overtemperature protection • Safe-restart mode with reduced power for system fault conditions. Highly versatile • Usable in buck and flyback topology • Interfaces both primary and secondary side feedback. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TEA1504 1999 Dec 07 DIP14 DESCRIPTION plastic dual in-line package; 14 leads (300 mil) 2 VERSION SOT27-1 Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 BLOCK DIAGRAM handbook, full pagewidth REF Vaux 8 6 Vaux MANAGEMENT Vi 1 START-UP CURRENT SOURCE on/off TEA1504 OOB 14 1 kΩ 5.5 V burst mode stand-by R OVER TEMPERATURE PROTECTION CTRL 9 SAMPLE AND HOLD1 DEM SAMPLE AND HOLD2 Q 6Ω 7 6Ω 4 S PULSE WIDTH MODULATOR OVER CURRENT PROTECTION inverting error amplifier comparator LEADING EDGE BLANKING OSCILLATOR 5 FREQUENCY CONTROL duty cycle limiting signal NEGATIVE CLAMP 11 2 3 GND HVS n.c. 10 12 MGS569 Fig.1 Block diagram. 1999 Dec 07 DRIVER driver stage 13 DEMAGNETIZATION MANAGEMENT DS 3 n.c. n.c. I sense Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 PINNING SYMBOL PIN DESCRIPTION Vi 1 start-up current source input; connects to MOSFET Drain supply HVS 2 high voltage safety spacer n.c. 3 not connected DRIVER 4 driver output; connects to Gate of power MOSFET Isense 5 current sense input; connects to current sense resistor Vaux 6 IC supply; connects to supply capacitor DS 7 internal driver supply REF 8 reference input; connects to reference resistor for setting internal reference currents handbook, halfpage Vi 1 14 OOB HVS 2 13 DEM n.c. 3 12 n.c. DRIVER 4 Isense 5 10 n.c. Vaux 6 9 DS 7 8 REF TEA1504 11 GND CTRL MGS570 CTRL 9 duty cycle control input n.c. 10 not connected GND 11 ground n.c. 12 not connected DEM 13 demagnetization signal input OOB 14 burst mode standby on/off control signal input Fig.2 Pin configuration. FUNCTIONAL DESCRIPTION Start-up current source and Vaux management Negligible power is dissipated by the TEA1504 after start-up, due to its fast and efficient start-up circuit. It has an accurate saw tooth oscillator whose output signal is compared with a voltage feedback control circuit to generate a pulse width modulated signal for driving the Gate of an external power MOSFET. The number of external components required for regulating the supply are reduced due to an innovative design implementing both primary and secondary side regulation. Overvoltage, overcurrent, overtemperature and demagnetization features protect the IC from system fault conditions. Off-mode, Burst mode standby, and a Low power operation mode are advanced features that greatly enhance the efficiency of the overall system. Off-mode, reduces the power consumption of the IC below 100 mW. Burst mode standby, reduces the power consumption of the system to below 2 W. Low power operation mode, reduces the operating frequency of the system during low load conditions to reduce switching losses. A versatile on-chip start-up current source eliminates the need for an external, highly dissipative trickle-charge circuit. See Figs 1 and 3. The start-up current source is supplied by rectified mains power via Vi (pin 1). It supplies charging current to the IC supply capacitor (Caux) and also supplies current to the IC control circuit (Vaux management) (see Istart(Vaux)L and Istart(Vaux)H in Chapter “Characteristics”). Once Caux is charged to its start-up voltage level (11 V), the oscillator starts oscillating and the IC starts switching the power MOSFET. Power is then supplied to the load via the secondary winding. Caux is also supplied by an auxiliary winding on the primary side which is coupled to the secondary winding supplying the output capacitor (Co). As the voltage on Co increases and approaches its nominal value, Caux is re-supplied with current by the auxiliary winding (see Fig.4). For correct operation, it is important that Caux starts to be re-supplied with current by the auxiliary winding before its voltage drops to the Under Voltage Lockout (UVLO) level of 8.05 V. 1999 Dec 07 4 Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 The start-up current source also helps to implement the safe-restart or ‘hiccup’ mode required during system fault conditions: output short-circuit, output open-circuit, and overvoltage. Under these fault conditions, the IC inhibits the normal operation of the system and stops delivering output power. If the output is short-circuited, Caux is no longer supplied by the auxiliary winding and its voltage drops to the UVLO level. If the output open-circuits, the output voltage rises to the Overvoltage Protection (OVP) level. The IC detects this state and stops switching the power MOSFET, which stops re-supplying current to Caux whose voltage starts to drop. Once the voltage on Caux drops to the UVLO level, the start-up current source re-activates and charges Caux to the start-up level, and the system begins the safe-restart mode cycle, similar to the normal start-up cycle. Figure 5 shows the relevant waveforms during safe-restart mode. To achieve a low ‘hiccup’ duty cycle, the current charging Caux during the safe-restart mode is lower than it is during normal start-up (see Irestart(Vaux) and Istart(Vaux)H in Chapter “Characteristics”). This reduces the risk, during an output short-circuit condition, of any physical damage being caused to output secondary winding devices, and of any breach of safety. The start-up current source is also important for implementing burst mode standby, explained in Section “Burst mode standby” (see Irestart(Vaux) in Chapter “Characteristics”). Vmains handbook, full pagewidth Vo Co OOB DEM n.c. GND n.c. CTRL REF RDEM CCTRL 14 1 13 2 12 3 11 TEA1504 4 10 5 9 6 8 7 (1) Vi HVS n.c. DRIVER power MOSFET Isense Vaux DS RREF Caux Rsense MGS571 (1) Secondary earthing points are isolated from their primary earthing points. Fig.3 Typical flyback application. 1999 Dec 07 5 auxiliary winding Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 Reference 11 V All reference voltages are derived from a temperature compensated, on-chip, band-gap. The band-gap reference voltage is also used with an external resistor (RREF) connected to REF (pin 8), to generate accurate, temperature independent, IC internal V REF bias currents. I REF = -------------- [ A ] . R REF (2) VVaux (4) 8.05 V (3) (1) RREF also affects the frequency of the oscillator (see Section “Oscillator”). t Vo Sample-and-hold The TEA1504 uses voltage feedback with an innovative sample-and-hold circuit to regulate the output voltage. In a primary feedback configuration, the sample-and-hold circuit samples the current into DEM (pin 13), fed by RDEM, which relates to the output voltage (Vo) during the period that current flows in the secondary winding. t VG (power MOSFET) switching off aVo = IREF × RDEM + Vclamp(DEM)(pos). t (1) (2) (3) (4) MGS572 Vclamp(DEM)(pos) is specified in Chapter “Characteristics”; ‘a’ = a constant determined by the turns ratio of the transformer. Start-up current source charges Caux. Start-up voltage. UVLO level. Auxiliary winding charges Caux. The sampled current is held in the external capacitor (CCTRL). The PWM uses the voltage on CCTRL to set the operating duty cycle of the power MOSFET. When the TEA1504 is used in a secondary feedback configuration, the feedback voltage is provided by an opto-coupler. Fig.4 Normal start-up waveforms. handbook, full pagewidth MGS647 VVaux fault condition normal operation (1) t VG (power MOSFET) switching off t (1) Start-up current source charges Caux. Fig.5 Safe-restart mode waveforms. 1999 Dec 07 6 Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 A low driver source current has been chosen in order to limit the ∆V/∆t at switch-on. This reduces Electro Magnetic Interference (EMI) and also the current spike across Rsense. Pulse width modulator The PWM comprises an inverting error amplifier and a comparator (see Fig.1) which drives the power MOSFET with a duty cycle that is inversely proportional to the voltage at CTRL (pin 9). A signal from the oscillator sets a latch that turns on the power MOSFET. The latch is then reset either by the signal from the PWM or by a duty cycle limiting signal from the oscillator. The latch stops the power MOSFET from being switched incorrectly if the PWM output signal becomes unstable. The maximum duty cycle is internally set to 80%. The IC switching signals during normal operation are shown in Fig.7. Demagnetization protection The demagnetization protection feature ensures discontinuous conduction of the power supply, simplifying the design of feedback control and giving a faster transient response. It protects against saturation of the transformer/inductor and also protects the power supply components against excessive stresses at start-up, when all energy storage components are completely discharged. During a system output short-circuit fault condition, it provides cycle-by-cycle protection of the converter configuration. The demagnetization resistor (RDEM) value can be calculated using the formula given in Section “Sample-and-hold”. Oscillator The oscillator determines the switching duty cycle. Its ramp signal voltage is compared to the output of the error amplifier by the PWM. The fully integrated oscillator circuit works by charging and discharging an internal capacitor between two voltage levels to create a sawtooth waveform with a rising edge that is 80% of the oscillator period (high frequency mode). This ratio sets a maximum switching duty cycle of 80% for the IC. The accuracy of the oscillator frequency is internally set to 5%. Its frequency can be adjusted between 50 and 100 kHz by changing the value of RREF. This gives the power supply designer greater flexibility in the choice of system components. The relationship between frequency and the value of RREF is shown in Fig.6. The range of RREF values and the frequencies of foscL and foscH are specified in Chapter “Characteristics”. MGS573 f oscH f oscL (kHz) (kHz) 45 90 35 70 (1) (2) Multi frequency control 25 50 When the power supply operates at or below 1⁄9 of its peak power, the IC changes to low power operation mode. This lowers the frequency of the oscillator to reduce the power supply switching losses. The ratio between the high and the low oscillator frequency is maintained at 1 : 2.5 (see foscL in Chapter “Characteristics”). An innovative design ensures that the transfer from high-to-low frequency and vice versa does not effect output voltage regulation. 30 10 20 30 RREF (kΩ) 15 40 (1) High frequency mode. (2) Low frequency mode. Fig.6 Frequency as function of RREF value. Gate driver The driver circuit to the Gate of the power MOSFET has a totem-pole output stage that has current sourcing capability of 120 mA and a current sink capability of 550 mA. This permits fast turn-on and turn-off of the power MOSFET for efficient operation. This circuit design allows the power supply designer to control the source and sink currents of the Gate driver circuit with a minimum number of external components. 1999 Dec 07 55 110 handbook, halfpage Negative clamp The negative clamp circuit ensures correct operation of the IC by preventing the voltage at DEM (pin 13) dropping below −0.45 V, during the period when the power MOSFET turns on and the auxiliary winding voltage goes negative. 7 Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 handbook, full pagewidth VVi VVi VD (power MOSFET) Vo VVaux VG (power MOSFET) IVaux 0 (1) VOOB 0 VµC start-up sequence normal operation overvoltage protection output short circuit burst mode stand-by normal operation MGS574 (1) All negative currents flow out of the IC. Fig.7 Typical waveforms. 1999 Dec 07 8 Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 Overvoltage protection Figure 8 shows a flyback converter configured to use the on/off mode. Switch S1 connects OOB (pin 14) to either a voltage close to ground, or to a voltage typically greater than 2.5 V. The OOB voltage is detected internally by the IC. If VOOB is low, the IC enters the off-mode, consuming a current of typically 350 µA (see Ioff(Vi) in Chapter “Characteristics”). If VOOB is typically 2.5 V, the IC enters the start-up sequence and begins normal operation (see Vth(on/off) in Chapter “Characteristics”). Figure 9 shows a ‘Mains Under Voltage Lock Out’ (MUVLO) circuit using 3 resistors. Assuming that R3 is chosen to be a very high value, the IC starts operating R1 when: V mains ≈ -------- × V OOB [ V ] ; where R1 >> R2. R2 The OVP circuit senses the voltage at Vaux (pin 6). If the output voltage exceeds the preset voltage limit, the OVP circuit turns off the power MOSFET preventing the re-supply of current to Caux. VVaux drops to the UVLO level and the system enters the low dissipation safe-restart mode described earlier. The system recovers from the safe-restart mode only if the OVP condition is removed. Overcurrent protection Cycle-by-cycle OCP is provided by sensing the voltage on Rsense. The voltage on Rsense relates to the amplitude of the primary current, and is internally compared with a reference voltage using a high speed comparator. The comparator threshold voltage is specified as Vth(Isense) in the Chapter “Characteristics”. This ensures that the power supply only starts working above a Vmains of 80 V for example. The bleeder current through R1 should be low (e.g. 30 µA at 300 V). The maximum primary (protection) current is therefore: V th ( Isense ) I prot = --------------------------- [ A ] . R sense Burst mode standby OOB (pin 14) is also used to implement the burst mode standby. In burst mode standby, the power supply enters a special low dissipation state where it typically consumes less than 2 W of power. Figure 9 shows a flyback converter using the burst mode standby function. The system enters burst mode standby when the microcontroller closes switches S2 and S3 on the secondary side. Switch S2 connects the output secondary winding to microcontroller capacitor (CµC) bypassing Co. When the voltage on (CµC) exceeds the zener voltage, the opto-coupler is activated sending a signal to OOB. In response to this signal, the IC stops switching and enters a ‘hiccup’ mode. Figure 7 shows the burst-mode standby signals. The hiccup mode during burst mode standby operation differs from the hiccup mode in safe-restart mode during a system fault condition. For safe-restart mode, the power has to be reduced. Burst mode standby requires sufficient power to supply the microcontroller. To prevent transformer rattle, the transformer peak current is reduced by a factor of 3. Burst mode standby operation continues until the microcontroller opens switches S2 and S3. The system then enters the start-up sequence and begins normal switching behaviour. If the power MOSFET current exceeds the current limit, the comparator changes state, turning off the power MOSFET. The power MOSFET is typically turned off in 210 ns (see td(Isense-DRIVER) in Chapter “Characteristics”). Having Rsense off-chip allows the power supply designer greater flexibility for programming the OCP threshold level. It also reduces the risk of an overcurrent condition being sensed incorrectly. When the power MOSFET turns on, the discharge current from the demagnetization ∆V/∆t limiting capacitor, flows through the power MOSFET instead of through Rsense. The Leading Edge Blanking circuit inhibits the operation of the OCP comparator for a short period when the power MOSFET turns on (see tblank(le) in Chapter “Characteristics”). This ensures that the power MOSFET is not turned off prematurely due to the false sensing of an overcurrent condition caused by current spikes produced by the discharge of primary-side snubber and parasitic capacitances. The tblank(le) is not fixed and tracks the oscillator frequency. Overtemperature protection Overtemperature protection is provided by an analog temperature sensing circuit which turns off the power MOSFET when the temperature exceeds typically 140 °C. On/off mode The on/off mode allows an expensive mains switch to be replaced by an in-expensive functional switch. 1999 Dec 07 9 Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); note 1. SYMBOL PARAMETER CONDITIONS MAX. UNIT − 720 V voltage on pin OOB −0.3 +14 V IDEM current on pin DEM − ±1 mA VCTRL voltage on pin CTRL −0.3 +5 V Vlsense voltage on pin Isense −0.3 +5 V IREF current on pin REF − −1 mA VVaux voltage on pin Vaux −0.3 +18 V VDS voltage on pin DS −0.3 +18 V Tj junction temperature −10 +140 °C Tstg storage temperature −40 +150 °C Vesd electrostatic discharge class 1 human body model note 2 − 1250 V machine model note 3 − 200 V Vi DC voltage on pin Vi VOOB measured at 200 µA MIN. Notes 1. All voltages are referenced to GND (pin 11). 2. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. 3. Equivalent to discharging a 200 pF capacitor through a 0.75 mH coil. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient QUALITY SPECIFICATION Quality specification “SNW-FQ-611 part E” is applicable. 1999 Dec 07 10 VALUE UNIT 70 K/W Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 CHARACTERISTICS Tj = −10 to +110 °C; VVi = 300 V; RREF = 24.9 kΩ (0.1%); VVaux = 8.6 to 13 V. Positive currents flow into the IC. Negative currents flow out of the IC. All voltages are referenced to GND (pin 11). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Start-up current source and Vaux management (pins 1 and 6) Vstart(Vi)(min) minimum start-up voltage on Vi 100 − − V Vstart(Vaux) start-up voltage on Vaux 10.4 11 11.6 V VUVLO(Vaux) under-voltage lockout on Vaux 7.4 8.05 8.6 V Vhys(Vaux) hysteresis voltage on Vaux Vstart(Vaux) − VUVLO(Vaux) 2.60 2.95 3.30 V Ii(Vi) input current on Vi normal operation 20 60 100 µA Ioff(Vi) off mode current on Vi VOOB < 1.95 V 150 350 550 µA Istart(Vaux)L low start-up current on Vaux 0 V < VVaux < 0.73 V −270 −230 −190 µA Istart(Vaux)H high start-up current on Vaux 0.5 V < VVaux < Vstart(Vaux) −5.0 −3.0 −1.0 mA lsup(Vaux)(oper) operating supply current on Vaux no load on DRIVER (pin 4) 3.5 3.85 4.2 mA Irestart(Vaux) restart current on Vaux in OCP mode −600 −530 −460 µA in burst standby mode −2.5 −2.1 −1.7 mA lVaux = 5 mA 15 − 18 V Vclamp(Vaux) clamping voltage on Vaux Reference input (pin 8) Vi(REF) reference input voltage 2.37 2.47 2.57 V RREF(oper) operating reference resistor 16.9 24.9 33.2 kΩ 27.5 29 30.5 kHz Oscillator foscL oscillator low frequency low power operation mode foscH oscillator high frequency normal mode 66 70 74 kHz δmax maximum duty cycle f = foscH 78 80 82 % foscH/foscL ratio between oscillator high and low frequencies 2.30 2.45 2.60 ∆foscH oscillator high frequency range with changing RREF 50 70 100 kHz VDEM decreasing 50 65 80 mV 300 500 700 ns Demagnetization management (pin 13) Vth(DEM) demagnetization comparator threshold voltage on DEM tP(DEM-BUF) propagation delay from DEM to output buffer Ii(bias)(DEM) input bias current on DEM Vclamp(DEM)(neg) Vclamp(DEM)(pos) VDEM = 65 mV −0.5(1) − −0.1(1) µA negative clamp voltage level on DEM IDEM = −500 µA −0.45 −0.35 0 V positive clamp voltage level on DEM IDEM = 100 µA 2.3 2.6 2.9 V lREF = 100 µA 90 100 110 µA 78 83 88 % ∆VDEM/∆t positive (500 V/µs) 170 450 730 ns ∆VDEM/∆t negative (10 V/µs) 20 90 160 ns Sample-and-hold (pin 13) Ictrl(DEM)(oper) operating control current on DEM Ith(sample) sample threshold current as % of Ictrl(DEM) tP(DEM-COMP) propagation delay from DEM to current comparator 1999 Dec 07 11 Philips Semiconductors Preliminary specification GreenChip SMPS control IC SYMBOL TEA1504 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Overvoltage protection (pin 6) VOVP(max) maximum OVP voltage level td(OVP) OVP delay time fixed maximum level 14.0 14.7 15.5 V 350 550 800 ns Isense Overcurrent protection and low power operation mode (pin 5) tblank(le) leading edge blanking time RREF = 0.7 × RREF(nominal) 180 260 340 ns RREF = RREF(nominal) 240 340 440 ns RREF = 1.3 × RREF(nominal) 415 470 560 ns Vth(Isense) comparator threshold voltage on Isense at maximum current td(Isense-DRIVER) delay from Isense to DRIVER (MOSFET off) Vth(lpom) threshold voltage for switch-over to low power operation mode 0.46 0.49 0.53 V 150 210 270 ns 155 165 175 mV foscH 95 85 75 %/V foscL 60 50 40 %/V at ∆V/∆t = 200 mV/µs Duty cycle control (pin 9) ∆δ/∆VCTRL variation of duty cycle with voltage on CTRL VCTRL(min) minimum control voltage on CTRL 2.00 2.15 2.30 V VCTRL(max) maximum control voltage on CTRL 2.90 3.05 3.20 V input/output leakage current on CTRL −1(1) − +1(1) µA 130 140 155 °C IL(CTRL) Overtemperature protection Tth(over) threshold overtemperature On/off mode and burst mode standby (pin 14) Vth(on/off) switch-over to on/off mode threshold voltage 2.3 2.5 2.8 V Vth(burst)(on) burst mode standby active threshold voltage 6.5 − 7.5 V Vth(burst)(off) burst mode standby inactive threshold voltage − − 5.5 V IO(OOB) output current on OOB VOOB > 400 mV −0.5(1) − −0.1(1) µA RDSonH Drain/Source on-state resistance (output going high) VVaux = 8.5 V and VDRIVER = 6.5 V 15 22 50 Ω RDSonL Drain/Source on-state resistance (output going low) VVaux = 8.5 V and VDRIVER = 2 V 3 6 15 Ω Isource source current of MOSFET VVaux = 8.5 V and VDRIVER = 2 V −280 −120 −100 mA Isink sink current of MOSFET VVaux = 8.5 V and VDRIVER = 2 V 150 250 500 mA VVaux = 8.5 V and VDRIVER = 8.5 V 400 550 900 mA DRIVER (pin 4) Note 1. Guaranteed by design. 1999 Dec 07 12 Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 A capacitor (CCTRL) having a low value of typically 0.2 to 2 nF is used by the internal sample-and-hold circuit to regulate the primary feedback circuit. CCTRL is connected to CTRL (pin 9). This pin is also the input for the opto-coupler signal in a secondary sensing configuration. Pin 11 is connected to ground. The primary side auxiliary winding is connected by resistor (RDEM) to DEM (pin 13). The DEM input is also used for primary side regulation. Input OOB (pin 14) implements both the on/off and the burst mode standby functions. The supply connected to Vi (pin 1) is used by the internal start-up current source for charging capacitor Caux during start-up and safe-restart modes. APPLICATION INFORMATION A converter using the TEA1504 is usually either a flyback or a buck converter that comprises EMI filter, full bridge rectifier, filter capacitor, transformer, output stage(s) and some snubber circuitry. Depending upon the type of feedback used, either an auxiliary winding (primary regulation) or an opto-coupler (secondary regulation) is used. Very few external components are used due to the high level of chip integration. A sense resistor (Rsense) converts the primary current into a voltage at Isense (pin 5). The IC uses this voltage to set the peak current of the converter. An auxiliary winding supplies capacitor Caux which buffers the IC’s internal supply. The auxiliary winding is also used as part of the primary output voltage regulation circuit. A resistor (RREF) determines the IC’s reference currents into REF (pin 8). handbook, full pagewidth For additional information also see: ‘application note AN98011: “200 W SMPS with TEA1504”’. Vmains Vo Co output on/off mode switch OOB S1 DEM n.c. GND n.c. CTRL REF RDEM RREF 14 1 13 2 12 3 11 TEA1504 4 10 5 9 6 8 7 (1) Vi HVS n.c. DRIVER power MOSFET Isense RCTRL Vaux (1) DS Caux auxiliary winding Rsense MGS575 (1) Secondary earthing points are isolated from their primary earthing points. Fig.8 Typical flyback configuration with secondary sensing and on/off feature. 1999 Dec 07 13 Philips Semiconductors Preliminary specification GreenChip SMPS control IC handbook, full pagewidth TEA1504 Vmains Vo R1 Co S2 R2 S1 output on/off mode switch OOB R3 DEM n.c. GND n.c. R4 CTRL RCTRL RDEM CCTRL REF RREF 14 1 13 2 12 3 11 TEA1504 4 10 5 9 6 8 7 (1) Vi VµC HVS n.c. power MOSFET DRIVER CµC Isense Vaux S3 DS (1) Caux Rsense burst-mode stand-by on/off from microcontroller auxiliary winding MGS576 (1) Secondary earthing points are isolated from their primary earthing points. Fig.9 Flyback configuration with secondary sensing using the burst mode standby and on/off feature. 1999 Dec 07 14 Philips Semiconductors Preliminary specification GreenChip SMPS control IC handbook, full pagewidth TEA1504 Vmains Vo Co output on/off mode switch OOB S1 DEM n.c. GND n.c. CTRL REF RDEM RREF 14 1 13 2 12 3 11 TEA1504 4 10 5 9 6 8 7 Vi HVS n.c. DRIVER power MOSFET Isense Vaux DS Caux Rsense RCTRL MGS577 Fig.10 Typical buck configuration with secondary sensing. 1999 Dec 07 15 Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 Vmains handbook, full pagewidth Vo Co output on/off mode switch OOB S1 DEM n.c. GND n.c. CTRL REF RDEM CCTRL 14 1 13 2 12 3 11 TEA1504 4 10 5 9 6 8 7 RREF Vi HVS n.c. DRIVER power MOSFET Isense Vaux DS Caux Rsense MGS578 Fig.11 Typical buck configuration with primary sensing. 1999 Dec 07 16 Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 PACKAGE OUTLINE DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1 ME seating plane D A2 A A1 L c e Z w M b1 (e 1) b MH 8 14 pin 1 index E 1 7 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.2 0.51 3.2 1.73 1.13 0.53 0.38 0.36 0.23 19.50 18.55 6.48 6.20 2.54 7.62 3.60 3.05 8.25 7.80 10.0 8.3 0.254 2.2 inches 0.17 0.020 0.13 0.068 0.044 0.021 0.015 0.014 0.009 0.77 0.73 0.26 0.24 0.10 0.30 0.14 0.12 0.32 0.31 0.39 0.33 0.01 0.087 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT27-1 050G04 MO-001AA 1999 Dec 07 EIAJ EUROPEAN PROJECTION ISSUE DATE 92-11-17 95-03-11 17 Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. SOLDERING Introduction to soldering through-hole mount packages This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). Manual soldering Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL WAVE suitable(1) suitable Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 1999 Dec 07 18 Philips Semiconductors Preliminary specification GreenChip SMPS control IC TEA1504 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Dec 07 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 295002/02/pp20 Date of release: 1999 Dec 07 Document order number: 9397 750 05331