INTEGRATED CIRCUITS
DATA SHEET
TEA1533T; TEA1533AT
GreenChipTMII SMPS control IC
Product specification
Supersedes data of 2002 May 31
2002 Aug 23
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
FEATURES
APPLICATIONS
Distinctive features
Besides typical application areas, i.e. adapters and
chargers, the device can be used in TV and monitor
supplies and all applications that demand an efficient and
cost-effective solution up to 250 W.
• Universal mains supply operation (70 to 276 V AC)
• High level of integration, giving a very low external
component count.
Green features
• Valley or zero voltage switching for minimum switching
losses
• Efficient quasi-resonant operation at high power levels
• Frequency reduction at low power standby for improved
system efficiency (<3 W)
• Cycle skipping mode at very low loads; Pi <300 mW at
no-load operation for a typical adapter application
• On-chip start-up current source.
Protection features
1
14
2
13
3
12
4 TEA1533T 11
• Safe restart mode for system fault conditions
TEA1533AT
• Continuous mode protection by means of
demagnetization detection (zero switch-on current)
• Accurate and adjustable overvoltage protection (latched
in TEA1533T, safe restart in TEA1533AT)
5
10
6
9
7
8
• Short winding protection
• Undervoltage protection (foldback during overload)
• Overtemperature protection (latched in TEA1533T, safe
restart in TEA1533AT)
• Low and adjustable overcurrent protection trip level
• Soft (re)start
• Mains voltage-dependent operation enabling level.
MGU499
Fig.1 Basic application diagram.
2002 Aug 23
2
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
The proprietary high voltage BCD800 process makes
direct start-up possible from the rectified mains voltage in
an effective and green way. A second low voltage
BICMOS IC is used for accurate, high-speed protection
functions and control.
GENERAL DESCRIPTION
GreenChip(1)II
is the second generation of green
The
Switched Mode Power Supply (SMPS) control ICs
operating directly from the rectified universal mains. A high
level of integration leads to a cost effective power supply
with a very low number of external components.
Highly efficient and reliable supplies can easily be
designed using the GreenChipII control IC.
The special built-in green functions allow the efficiency to
be optimum at all power levels. This holds for
quasi-resonant operation at high power levels, as well as
fixed frequency operation with valley switching at medium
power levels. At low power (standby) levels, the system
operates at a reduced frequency and with valley detection.
(1) GreenChip is a trademark of Koninklijke Philips
Electronics N.V.
ORDERING INFORMATION
TYPE
NUMBER
TEA1533T
PACKAGE
NAME
SO14
DESCRIPTION
plastic small outline package; 14 leads; body width 3.9 mm
TEA1533AT
2002 Aug 23
3
VERSION
SOT108-1
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GND
3
S1
OCP
DEMAG
SHORT
PROTECTION
UVLO start
M-level
Iprot(DEM)
VALLEY
clamp
12, 13
7
VOLTAGE
CONTROLLED
OSCILLATOR
LOGIC
DRAIN
HVS
n.c.
DEM
50
mV
100
mV
UP/DOWN
COUNTER
FREQUENCY
CONTROL
LOGIC
Iprot(CTRL)
4
CTRL
6
OVERVOLTAGE
PROTECTION
11
DRIVER
DRIVER
Iss
−1
LEB
POWER-ON
RESET
S
Q
R
Q
soft
start
S2
blank
UVLO
2.5 V
0.5 V
9
OCP
burst
detect
VCC < 4.5 V
or UVLO
(TEA1533AT)
S
Q
R
Q
short
winding
0.88 V
OVERPOWER
PROTECTION
MGU500
Fig.2 Block diagram.
Product specification
MAXIMUM
ON-TIME
PROTECTION
Isense
TEA1533T; TEA1533AT
OVERTEMPERATURE
PROTECTION
TEA1533T
TEA1533AT
Philips Semiconductors
internal
supply
14
START-UP
CURRENT SOURCE
GreenChipTMII SMPS control IC
SUPPLY
MANAGEMENT
BLOCK DIAGRAM
2
book, full pagewidth
2002 Aug 23
VCC
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
PINNING
FUNCTIONAL DESCRIPTION
SYMBOL PIN
The TEA1533 is the controller of a compact flyback
converter, and is situated at the primary side. An auxiliary
winding of the transformer provides demagnetization
detection and powers the IC after start-up.
DESCRIPTION
n.c.
1
not connected
VCC
2
supply voltage
GND
3
ground
n.c.
4
not connected
n.c.
5
not connected
CTRL
6
control input
DEM
7
input from auxiliary winding for
demagnetization timing, overvoltage
and overpower protection
The TEA1533 can operate in multi modes (see Fig.4).
n.c.
8
not connected
Isense
9
programmable current sense input
n.c.
10
not connected
DRIVER
11
gate driver output
HVS
12
high voltage safety spacer, not
connected
HVS
13
high voltage safety spacer, not
connected
DRAIN
14
drain of external MOS switch, input for
start-up current and valley sensing
f
VCO
P (W)
Fig.4 Multi modes operation.
The next converter stroke is started only after
demagnetization of the transformer current (zero current
switching), while the drain voltage has reached the lowest
voltage to prevent switching losses (green function). The
primary resonant circuit of the primary inductance and
drain capacitor ensures this quasi-resonant operation. The
design can be optimized in such a way that zero voltage
switching can be reached over almost the universal mains
range.
14 DRAIN
13 HVS
GND 3
12 HVS
n.c. 5
To prevent very high frequency operation at lower loads,
the quasi-resonant operation changes smoothly in fixed
frequency PWM control.
TEA1533T 11 DRIVER
TEA1533AT
At very low power (standby) levels, the frequency is
controlled down, via the VCO, to a minimum frequency of
approximately 25 kHz.
10 n.c.
CTRL 6
9
Isense
DEM 7
8
n.c.
Start-up, mains enabling operation level and
undervoltage lock-out
MGU501
Initially, the IC is self supplying from the rectified mains
voltage via pin DRAIN (see Figs 11 and 12). Supply
capacitor CVCC is charged by the internal start-up current
source to approximately 4 V or higher, depending on the
voltage on pin DRAIN.
Fig.3 Pin configuration.
2002 Aug 23
quasi resonant
25
VCC 2
n.c. 4
fixed
175
handbook, halfpage
n.c. 1
MGU508
handbook, halfpage
(kHz)
5
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
Once the drain voltage exceeds the M-level
(mains-dependent operation-enabling level), the start-up
current source will continue charging capacitor CVCC
(switch S1 will be opened); see Fig.2. The IC will activate
the converter as soon as the voltage on pin VCC passes
the VCC(start) level. The IC supply is taken over by the
auxiliary winding as soon as the output voltage reaches its
intended level and the IC supply from the mains voltage is
subsequently stopped for high efficiency operation (green
function).
MGU233
V
sense(max)
handbook, halfpage
0.52 V
1V
(typ)
The moment the voltage on pin VCC drops below the
undervoltage lock-out level, the IC stops switching and
enters a safe restart from the rectified mains voltage.
Inhibiting the auxiliary supply by external means causes
the converter to operate in a stable, well defined burst
mode.
1.5 V
(typ)
VCTRL
Fig.5 Vsense(max) voltage as function of VCTRL.
Supply management
MGU509
f
(kHz)
All (internal) reference voltages are derived from a
temperature compensated, on-chip band gap circuit.
handbook, halfpage
175 kHz
175
Current mode control
Current mode control is used for its good line regulation
behaviour.
25
The ‘on-time’ is controlled by the internally inverted control
voltage, which is compared with the primary current
information. The primary current is sensed across an
external resistor. The driver output is latched in the logic,
preventing multiple switch-on.
VCO2
VCO1
level
level
Vsense(max) (V)
Fig.6 VCO frequency as function of Vsense(max)
Cycle skipping
The internal control voltage is inversely proportional to the
external control pin voltage, with an offset of 1.5 V. This
means that a voltage range from 1 to 1.5 V on pin CTRL
will result in an internal control voltage range from
0.5 to 0 V (a high external control voltage results in a low
duty cycle).
At very low power levels, a cycle skipping mode will be
activated. A high control voltage will reduce the switching
frequency to a minimum of 25 kHz. If the voltage on the
control pin is raised even more, switch-on of the external
power MOSFET will be inhibited until the voltage on the
control pin has dropped to a lower value again (see Fig.7).
Oscillator
For system accuracy it is not the absolute voltage on the
control pin that will trigger the cycle skipping mode, but a
signal derived from the internal VCO will be used.
The maximum fixed frequency of the oscillator is set by an
internal current source and capacitor. The maximum
frequency is reduced once the control voltage enters the
VCO control window. Then, the maximum frequency
changes linearly with the control voltage until the minimum
frequency is reached (see Figs 5 and 6).
Remark 1: If the no-load requirement of the system is such
that the output voltage can be regulated to its intended
level at a switching frequency of 25 kHz or above, the
cycle skipping mode will not be activated.
Remark 2: As switching will stop when the voltage on the
control pin is raised above a certain level, the burst mode
has to be activated by a microcontroller or any other circuit
sending a 30 µs, 16 mA pulse to the control input
(pin CTRL) of the IC.
2002 Aug 23
6
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
fosc
handbook, full pagewidth
1.5 V − VCTRL
current
comparator
CTRL
fmax
DRIVER
DRIVER
fmin
Isense
X2
dV2
Vx
dV1
cycle
skipping
V
I
150
Vx (mV)
OSCILLATOR
150 mV
1
0
Vx (mV)
MGU510
The voltage levels dV1 and dV2 are fixed in the IC to 50 mV (typical) and 18 mV (typical) respectively.
Fig.7 The cycle skipping circuitry.
Demagnetization
Minimum and maximum ‘on-time’
The system will be in discontinuous conduction mode all
the time. The oscillator will not start a new primary stroke
until the secondary stroke has ended.
The minimum ‘on-time’ of the SMPS is determined by the
Leading Edge Blanking (LEB) time. The IC limits the
‘on-time’ to 50 µs. When the system desires an ‘on-time’
longer than 50 µs, a fault condition is assumed (e.g.
removed Ci in Fig.11), the IC will stop switching and enter
the safe restart mode.
Demagnetization features a cycle-by-cycle output
short-circuit protection by immediately lowering the
frequency (longer off-time), thereby reducing the power
level.
Demagnetization recognition is suppressed during the first
tsuppr time. This suppression may be necessary in
applications where the transformer has a large leakage
inductance, at low output voltages and at start-up.
If pin DEM is open-circuit or not connected, a fault
condition is assumed and the converter will stop operating
immediately. Operation will recommence as soon as the
fault condition is removed.
If pin DEM is shorted to ground, again a fault condition is
assumed and the converter will stop operating after the
first stroke. The converter will subsequently enter the safe
restart mode. This situation will persist until the
short-circuit is removed.
2002 Aug 23
7
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
OverVoltage Protection (OVP)
Valley switching
An OVP mode is implemented in the GreenChip series.
This works for the TEA1533 by sensing the auxiliary
voltage via the current flowing into pin DEM during the
secondary stroke. The auxiliary winding voltage is a
well-defined replica of the output voltage. Any voltage
spikes are averaged by an internal filter.
A new cycle starts when the power MOSFET is switched
on (see Fig.8). After the ‘on-time’ (which is determined by
the ‘sense’ voltage and the internal control voltage), the
switch is opened and the secondary stroke starts. After the
secondary stroke, the drain voltage shows an oscillation
1
with a frequency of approximately ----------------------------------------------2 × π × ( Lp × Cd )
If the output voltage exceeds the OVP trip level, an internal
counter starts counting subsequent OVP events. The
counter has been added to prevent incorrect OVP
detections which might occur during ESD or lightning
events. If the output voltage exceeds the OVP trip level a
few times and not again in a subsequent cycle, the internal
counter will count down with twice the speed compared
with counting up. However, when typical 10 cycles of
subsequent OVP events are detected, the IC assumes a
true OVP and the OVP circuit switches the power
MOSFET off. Next, the controller waits until the UVLO
level is reached on pin VCC. When VCC drops to UVLO,
capacitor CVCC will be recharged to the Vstart level.
where Lp is the primary self inductance of the transformer
and Cd is the capacitance on the drain node.
As soon as the oscillator voltage is high again and the
secondary stroke has ended, the circuit waits for the
lowest drain voltage before starting a new primary stroke.
This method is called valley detection. Figure 8 shows the
drain voltage together with the valley signal, the signal
indicating the secondary stroke and the oscillator signal.
In an optimum design, the reflected secondary voltage on
the primary side will force the drain voltage to zero. Thus,
zero voltage switching is very possible, preventing large
Regarding the TEA1533T, this IC will not start switching
again. Subsequently, VCC will drop again to the UVLO
level, etc. Operation only recommences when the VCC
voltage drops below a level of approximately 4.5 V
(practically when Vmains has been disconnected for a short
period).
1
2
capacitive switching losses P = --- × C × V × f and
2
allowing high frequency operation, which results in small
and cost effective inductors.
Regarding the TEA1533AT, switching starts again (safe
restart mode) when the Vstart level is reached. This
process is repeated as long as the OVP condition exists.
The output voltage Vo(OVP) at which the OVP function trips,
can be set by the demagnetization resistor, RDEM:
V o ( OVP ) =
Ns
----------- { I (OVP)(DEM) × R DEM + V clamp(DEM)(pos) }
N aux
where Ns is the number of secondary turns and Naux is the
number of auxiliary turns of the transformer.
Current I(OVP)(DEM) is internally trimmed.
The value of RDEM can be adjusted to the turns ratio of the
transformer, thus making an accurate OVP possible.
2002 Aug 23
8
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
primary
stroke
handbook, full pagewidth
TEA1533T; TEA1533AT
secondary
ringing
secondary
stroke
drain
valley
secondary
stroke
B
A
oscillator
MGU235
A: Start of new cycle at lowest drain voltage.
B: Start of new cycle in a classical PWM system at high drain voltage.
Fig.8 Signals for valley switching.
OverCurrent Protection (OCP)
N aux
where: N = ----------Np
The cycle-by-cycle peak drain current limit circuit uses the
external source resistor to measure the current accurately.
This allows optimum size determination of the transformer
core (cost issue). The circuit is activated after the leading
edge blanking time, tleb. The OCP circuit limits the ‘sense’
voltage to an internal level.
The current information is used to adjust the peak drain
current, which is measured via pin Isense. The internal
compensation is such that an almost mains independent
maximum output power can be realized.
The OPP curve is given in Fig.9.
OverPower Protection (OPP)
During the primary stroke, the rectified mains input voltage
is measured by sensing the current drawn from pin DEM.
This current is dependent on the mains voltage, according
V aux N × V mains
to the following formula: I DEM ≈ --------------- ≈ -------------------------R DEM
R DEM
2002 Aug 23
9
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
Control pin protection
If pin CTRL is open-circuit or not connected, a fault
condition is assumed and the converter will stop switching.
Operation will recommence as soon as the fault condition
is removed.
MGU236
handbook, halfpage
Vsense(max)
0.52 V
(typ)
Burst mode standby
0.3 V
(typ)
−100 µA
(typ)
IDEM
Pin CTRL is also used to implement the burst mode
standby. In burst mode standby, the power supply enters
a special low dissipation state. Figure 11 shows a flyback
converter using the burst mode standby function. The
system enters burst mode standby when the
microcontroller activates NPN transistor T1 on the
secondary side.
−24 µA
(typ)
Fig.9 OPP correction curve.
When the voltage on Cmicro exceeds a certain voltage,
measured by the microcontroller, the opto-coupler is
activated by T1, sending a large current signal to
pin CTRL. In response to this signal, the IC stops switching
and enters a ‘hiccup’ mode. This burst activation signal
should be present for longer than the ‘burst blank’ period
(typically 30 µs): the blanking time prevents false burst
triggering due to spikes. Figure 12 shows the burst mode
standby signals. The hiccup mode during burst mode
standby operation does not differ from the hiccup mode at
safe restart during a system fault condition (e.g. output
short-circuit). The power is reduced during soft restart
mode.
Short winding protection
After the leading edge blanking time, the short winding
protection circuit is activated. If the ‘sense’ voltage
exceeds the short winding protection voltage Vswp, the
converter will stop switching. Once VCC drops below the
UVLO level, capacitor CVCC will be recharged and the
supply will restart again. This cycle will be repeated until
the short-circuit is removed (safe restart mode).
The short winding protection will also protect in case of a
secondary diode short-circuit.
Burst mode standby operation continues until the
microcontroller stops activating transistor T1. The system
then enters the start-up sequence and begins normal
switching behaviour.
OverTemperature Protection (OTP)
An accurate temperature protection is provided in the
circuit. When the junction temperature exceeds the
thermal shutdown temperature, the IC will stop switching.
When VCC drops to UVLO, capacitor CVCC will be
recharged to the Vstart level.
V th
I burstmode = ---------------+I
R CTRL th(on)
Regarding the TEA1533T, this IC will not start switching
again. Subsequently, VCC will drop again to the UVLO
level, etc. Operation only recommences when the VCC
voltage drops below a level of approximately 4.5 V
(practically when the Vmains has been disconnected for a
short period).
Regarding the TEA1533AT, when the Vstart level is
reached, switching starts again (safe restart mode). This
process is repeated as long as the OTP condition exists.
2002 Aug 23
10
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
Soft start-up
Driver
To prevent transformer rattle during hiccup, the
transformer peak current is slowly increased by the soft
start function. This can be achieved by inserting a resistor
and a capacitor between pin Isense and the sense resistor
(see Fig.10). An internal current source charges the
capacitor to V = ISS × RSS, with a maximum of
approximately 0.5 V.
The driver circuit to the gate of the power MOSFET has a
current sourcing capability of 170 mA typical and a current
sink capability of 700 mA typical. This permits fast turn-on
and turn-off of the power MOSFET for efficient operation.
A low driver source current has been chosen to limit the
∆V/∆t at switch-on. This reduces Electro Magnetic
Interference (EMI) and also limits the current spikes
across Rsense.
The start level and the time constant of the increasing
primary current level can be adjusted externally by
changing the values of RSS and CSS.
V ocp – ( I SS × R SS )
I primary(max) = ---------------------------------------------R sense
τ = R SS × C SS
The charging current ISS will flow as long as the voltage on
pin Isense is below approximately 0.5 V. If the voltage on
pin Isense exceeds 0.5 V, the soft start current source will
start limiting the current ISS. At the VCC(start) level, the ISS
current source is completely switched off.
Since the soft start current ISS is subtracted from pin VCC
charging current, the RSS value will affect the VCC charging
current level by a maximum of 60 µA (typical value).
handbook, halfpage
ISS
0.5 V
start-up
RSS
9 Isense
Vocp
CSS
Rsense
MGU502
Fig.10 Soft start.
2002 Aug 23
11
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); note 1.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Voltages
−0.4
VCC
supply voltage
continuous
+20
V
VCTRL
voltage on pin CTRL
−0.4
+5
V
VDEM
voltage on pin DEM
current limited
−0.4
−
V
Vsense
voltage on pin Isense
current limited
−0.4
−
V
VDRAIN
voltage on pin DRAIN
−0.4
+650
V
Currents
ICTRL
current on pin CTRL
−
50
mA
IDEM
current on pin DEM
−250
+250
µA
Isense
current on pin Isense
−1
+10
mA
IDRIVER
current on pin DRIVER
−0.8
+2
A
IDRAIN
current on pin DRAIN
−
5
mA
d < 10%
d < 10%
General
Ptot
total power dissipation
−
0.75
W
Tstg
storage temperature
Tamb < 70 °C
−55
+150
°C
Tj
operating junction temperature
−20
+145
°C
Vesd
electrostatic discharge voltage
pins 1 to 13
HBM class 1; note 2
−
2000
V
pin DRAIN
HBM class 1; note 2
−
1500
V
any pin
MM; note 3
−
400
V
Notes
1. All voltages are measured with respect to ground; positive currents flow into the IC; pin VCC may not be current
driven. The voltage ratings are valid provided other ratings are not violated; current ratings are valid provided the
maximum power rating is not violated.
2. Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 kΩ resistor.
3. Machine Model (MM): equivalent to discharging a 200 pF capacitor through a 0.75 µH coil and a 10 Ω resistor.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
in free air; note 1
Note
1. With pin GND connected to sufficient copper area on the printed-circuit board.
QUALITY SPECIFICATION
In accordance with ‘SNW-FQ-611-D’.
2002 Aug 23
12
VALUE
UNIT
100
K/W
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
CHARACTERISTICS
Tamb = 25 °C; VCC = 15 V; all voltages are measured with respect to ground; currents are positive when flowing into
the IC; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Start-up current source (pin DRAIN)
IDRAIN
supply current drawn from
pin DRAIN
VCC = 0 V; VDRAIN > 100 V
1.0
1.2
1.4
mA
with auxiliary supply;
VDRAIN > 100 V
−
100
300
µA
BVDSS
breakdown voltage
650
−
−
V
M-level
mains-dependent operation
enabling level
60
−
100
V
Supply voltage management (pin VCC)
VCC(start)
start-up voltage on VCC
10.3
11
11.7
V
VCC(UVLO)
under voltage lock-out on VCC
8.1
8.7
9.3
V
VCC(hys)
hysteresis voltage on VCC
VCC(start) − VCC(UVLO)
2.0
2.3
2.6
V
ICC(h)
pin VCC charging current, high
VDRAIN > 100 V; VCC < 3V
−1.2
−1
−0.8
mA
ICC(l)
pin VCC charging current, low
VDRAIN > 100 V;
3 V < VCC < VCC(UVLO)
−1.2
−0.75
−0.45
mA
ICC(restart)
pin VCC restart current
VDRAIN > 100 V;
−650
VCC(UVLO) < VCC < VCC(start)
−550
−450
µA
ICC(oper)
supply current under normal
operation
no load on pin DRIVER
1.1
1.3
1.5
mA
ICC(burstmode)
supply current while not switching
−
0.85
−
mA
50
100
150
mV
VDEM = 50 mV
−50(1)
−
−10
nA
Vclamp(DEM)(neg) negative clamp voltage on
pin DEM
IDEM = −150 µA
−0.5
−0.25
−0.05
V
Vclamp(DEM)(pos) positive clamp voltage on
pin DEM
IDEM = 250 µA
0.5
0.7
0.9
V
1.1
1.5
1.9
µs
−
tleb
−
ns
40
50
60
µs
Demagnetization management (pin DEM)
Vth(DEM)
demagnetization comparator
threshold voltage on pin DEM
Iprot(DEM)
protection current on pin DEM
tsuppr
suppression of transformer
ringing at start of secondary
stroke
Pulse width modulator
ton(min)
minimum on-time
ton(max)
maximum on-time
latched
Oscillator
fosc(l)
oscillator low fixed frequency
VCTRL > 1.5 V
20
25
30
kHz
fosc(h)
oscillator high fixed frequency
VCTRL < 1 V
145
175
205
kHz
Vvco(start)
peak voltage on pin Isense, where
frequency reduction starts
see Figs 6 and 7
−
VCO1
−
mV
2002 Aug 23
13
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
SYMBOL
Vvco(max)
TEA1533T; TEA1533AT
PARAMETER
CONDITIONS
peak voltage on pin Isense, where
the frequency is equal to fosc(l)
MIN.
TYP.
MAX.
−
VCO1 − 25 −
UNIT
mV
Duty cycle control (pin CTRL)
VCTRL(min)
minimum voltage on pin CTRL for
maximum duty cycle
−
1.0
−
V
VCTRL(max)
maximum voltage on pin CTRL for
minimum duty cycle
−
1.5
−
V
Iprot(CTRL)
protection current on pin CTRL
VCTRL = 1.5V
−1(1)
−0.8
-0.5
µA
Iburst = 6 mA
3.3
3.8
4.3
V
Burst mode standby (pin CTRL)
Vth(burst)(on)
burst mode standby active
threshold voltage
Ith(burst)(on)
burst mode standby active current
16
−
−
mA
Ith(burst)(off)
burst mode standby inactive
current
−
−
6
mA
tburst-blank
burst mode standby blanking time
25
30
35
µs
Valley switch (pin DRAIN)
∆V/∆tvalley
valley recognition voltage change
−85
−
+85
V/µs
tvalley-swon
delay from valley recognition to
switch-on
−
150(1)
−
ns
Overcurrent and short winding protection (pin Isense)
Vsense(max)
maximum source voltage OCP
∆V/∆t = 0.1 V/µs
0.48
0.52
0.56
V
tPD
propagating delay from detecting
Vsense(max) to switch-off
∆V/∆t = 0.5 V/µs
−
140
185
ns
Vswp
short winding protection voltage
0.83
0.88
0.96
V
tleb
blanking time for current and
short winding protection
300
370
440
ns
ISS
soft start current
Vsense < 0.5 V
45
60
75
µA
set by resistor RDEM, see
Section “OverVoltage
Protection (OVP)”
54
60
66
µA
set by resistor RDEM, see
Section “OverPower
Protection (OPP)”
−
−24
−
µA
−
−100
−
µA
Overvoltage protection (pin DEM)
IOVP(DEM)
OVP current on pin DEM
Overpower protection (pin DEM)
IOPP(DEM)
OPP current on pin DEM to start
OPP correction, set by the
demagnetization resistor RDEM
IOPP50%(DEM)
OPP current on pin DEM, where
maximum source voltage is
limited to 0.3 V
2002 Aug 23
14
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
SYMBOL
PARAMETER
TEA1533T; TEA1533AT
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Driver (pin DRIVER)
Isource
source current capability of driver
VCC = 9.5 V; VDRIVER = 2 V −
−170
−88
mA
Isink
sink current capability of driver
VCC= 9.5 V; VDRIVER = 2 V
−
300
−
mA
VCC = 9.5 V;
VDRIVER = 9.5 V
400
700
−
mA
VCC > 12 V
−
11.5
12
V
Vo(max)
maximum output voltage of the
driver
Overtemperature protection
Tprot(max)
maximum temperature protection
level
130
140
150
°C
Tprot(hys)
hysteresis for the temperature
protection level
−
8(1)
−
°C
Note
1. Guaranteed by design.
2002 Aug 23
15
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
APPLICATION INFORMATION
A converter with the TEA1533 consists of an input filter, a transformer with a third winding (auxiliary), and an output stage
with a feedback circuit.
Capacitor CVCC (at pin VCC) buffers the supply voltage of the IC, which is powered via the high voltage rectified mains
during start-up and via the auxiliary winding during operation.
A sense resistor converts the primary current into a voltage at pin Isense. The value of this sense resistor defines the
maximum primary peak current.
Vmains
handbook, full pagewidth
Do
Vi
Vo
Ci
CVCC
VCC
GND
1
14
2
13
3
12
4 TEA1533T 11
Np
DRAIN
HVS
HVS
Ns
Co
n.c.
n.c.
power
MOSFET
DRIVER
TEA1533AT
10
5
CCTRL
CTRL
RCTRL
DEM
6
9
7
8
RSS
Isense
CSS
Rsense
Dmicro
VµC
RDEM
Naux
Cmicro
standby
pulse
MICROCONTROLLER
Rreg1
T1
Rreg2
MGU503
Fig.11 Flyback configuration with secondary sensing using the burst mode standby.
2002 Aug 23
16
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
handbook, full pagewidth
Vi
VD
(power
MOSFET)
Vi
Vo
VCC
Vgate
M-level
burst mode
VµC
start-up
sequence
normal
operation
overvoltage
protection
(TEA1533AT)
output
short-circuit
Fig.12 Typical waveforms.
2002 Aug 23
17
burst mode standby
normal
operation
MGU504
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
PACKAGE OUTLINE
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
D
E
A
X
c
y
HE
v M A
Z
8
14
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
7
e
0
detail X
w M
bp
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
8.75
8.55
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.010 0.057
0.004 0.049
0.01
0.019 0.0100 0.35
0.014 0.0075 0.34
0.16
0.15
0.050
0.028
0.024
0.01
0.01
0.004
0.028
0.012
inches 0.069
0.244
0.039
0.041
0.228
0.016
θ
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT108-1
076E06
MS-012
2002 Aug 23
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-05-22
99-12-27
18
o
8
0o
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Wave soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
2002 Aug 23
19
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE(1)
WAVE
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA
not suitable
suitable(3)
HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN,
HVSON, SMS
not
PLCC(4), SO, SOJ
suitable
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
REFLOW(2)
suitable
suitable
suitable
not
recommended(4)(5)
suitable
not
recommended(6)
suitable
Notes
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2002 Aug 23
20
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Aug 23
21
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
NOTES
2002 Aug 23
22
Philips Semiconductors
Product specification
GreenChipTMII SMPS control IC
TEA1533T; TEA1533AT
NOTES
2002 Aug 23
23
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA74
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613502/02/pp24
Date of release: 2002
Aug 23
Document order number:
9397 750 10262