BB 835 Silicon Tuning Diode Preliminary data Features ● Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units ● High capacitance ratio Type BB 835 Marking yellow X Ordering Code (tape and reel) Q62702-B802 Pin Configuration 1 2 C A Package SOD-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 30 V VRM 35 V Forward current IF 20 mA Operating temperature range TOP – 55… +150 °C Storage temperature range Tstg – 55… +150 °C Rth JA ≤ 450 K/W Reverse voltage (R ≥ 5 kΩ) Thermal Resistance Junction - ambient 1) 1) For detailed informatioon see chapter Package Outline Semiconductor Group 1 04.96 BB 835 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value min. typ. Unit max. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C IR Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Capacitance ratio VR = 1 V, 28 V, f = 1 MHz CT1/CT28 Capacitance matching VR = 1…28 V, f = 1 MHz ∆CT/CT Series resistance VR = 1 V, f = 470 MHz rS Series inductance LS – – 2 – – 10 200 pF 8.5 0.5 Diode capacitance CT = f (VR) f = 1 MHz. Semiconductor Group nA 9.1 0.62 10 0.75 – 13.5 14.7 – – – 3 % Ω – 2.4 – – 1.4 – nH