PHILIPS 2N7002

DISCRETE SEMICONDUCTORS
DATA SHEET
2N7002
N-channel vertical D-MOS
transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
FEATURES
2N7002
QUICK REFERENCE DATA
• Direct interface to C-MOS, TTL,
etc.
• High-speed switching
• No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a SOT23
envelope. It is designed for use as a
Surface Mounted Device (SMD) in
thin and thick-film circuits, with
applications in relay, high-speed and
line transformer drivers.
SYMBOL
PARAMETER
CONDITIONS
drain-source voltage
60
V
ID
drain current
DC value
180
mA
RDS(on)
drain-source on-resistance
ID = 500 mA
VGS = 10 V
5
Ω
VGS(th)
gate-source threshold
voltage
ID = 1 mA
VGS = VDS
3
V
PIN CONFIGURATION
handbook, 2 columns
3
d
PINNING - SOT23
DESCRIPTION
g
1
gate
1
2
source
Top view
3
drain
2
MBB076 - 1
MSB003
s
Marking code: 702
Fig.1 Simplified outline and symbol.
April 1995
UNIT
VDS
ook, halfpage
PIN
MAX.
2
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
60
V
±VGSO
gate-source voltage
open drain
−
40
V
ID
drain current
DC value
−
180
mA
IDM
drain current
peak value
−
800
mA
Ptot
total power dissipation
Tamb = 25 °C
(note 1)
(note 2)
−
−
300
250
mW
mW
Tstg
storage temperature range
−65
150
°C
Tj
junction temperature
−
150
°C
Notes
1. Mounted on a ceramic substrate measuring 10 × 8 × 0.7 mm.
2. Mounted on a printed circuit board.
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
from junction to ambient
note 1
note 2
Notes
1. Mounted on a ceramic substrate measuring 10 × 8 × 0.7 mm.
2. Mounted on a printed circuit board.
April 1995
3
VALUE
430
500
UNIT
K/W
K/W
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 10 µA
VGS = 0
60
90
−
V
IDSS
drain-source leakage current
VDS = 48 V
VGS = 0
−
−
1
µA
±IGSS
gate-source leakage current
VDS = 0
±VGS = 15 V
−
−
10
nA
VGS(th)
gate-source threshold voltage
ID = 1 mA
VGS = VDS
0.8
−
3
V
RDS(on)
drain-source on-resistance
ID = 500 mA
VGS = 10 V
−
3.5
5
Ω
ID = 75 mA
VGS = 4.5 V
−
−
5.3
Ω
 Yfs
transfer admittance
ID = 200 mA
VDS = 10 V
100
200
−
mS
Ciss
input capacitance
VDS = 10 V
VGS = 0
f = 1 MHz
−
25
40
pF
Coss
output capacitance
VDS = 10 V
VGS = 0
f = 1 MHz
−
22
30
pF
Crss
feedback capacitance
VDS = 10 V
VGS = 0
f = 1 MHz
−
6
10
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 200 mA
VDD = 50 V
VGS = 0 to 10 V
−
−
10
ns
toff
turn-off time
ID = 200 mA
VDD = 50 V
VGS = 0 to 10 V
−
−
15
ns
April 1995
4
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
VDD = 50 V
handbook, halfpage
handbook, halfpage
90 %
INPUT
10 %
90 %
10 V
ID
0V
OUTPUT
50 Ω
10 %
MSA631
ton
toff
MBB692
Fig.2 Switching time test circuit.
Fig.3 Input and output waveforms.
MLA223
300
MDA697
1.6
handbook, halfpage
handbook, halfpage
Ptot
ID
(A)
(mW)
1.2
200
VGS = 10 V
6V
0.8
(2)
(1)
5V
100
0.4
4V
3V
0
0
0
50
100
0
150
200
Tamb (°C)
4
8
12
VDS (V)
16
(1) On ceramic substrate.
(2) On printed circuit board.
Fig.5 Typical output characteristics; Tj = 25 °C.
Fig.4 Power derating curve.
April 1995
5
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
MDA698
1.2
MDA699
20
handbook, halfpage
handbook, halfpage
ID
RDSon
(Ω)
(A)
16
VGS = 3 V
0.8
12
4V
8
0.4
5V
4
0
0
4
0
Fig.6
8
VGS (V)
12
Typical transfer characteristic; VDS = 10 V;
Tj = 25 °C.
handbook, halfpage
C
(pF)
60
40
Ciss
Coss
20
Crss
0
0
Fig.8
April 1995
5
10
15
1
Fig.7
MDA694
80
10 V
20
25
VDS (V)
Typical capacitances as a function of
drain-source voltage; VGS = 0; f = 1 MHz;
Tj = 25 °C.
6
10
102
103
ID (mA)
104
Typical on-resistance as a function of drain
current; Tj = 25 °C.
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
MDA695
2.4
MDA696
1.2
handbook, halfpage
handbook, halfpage
k
k
1.1
2
(1)
1
1.6
(2)
1.2
0.9
0.8
0.8
0.4
−50
0
50
100
Tj (°C)
0.7
−50
150
0
50
100
Tj (°C)
150
(1) ID = 500 mA; VGS = 10 V.
(2) ID = 75 mA; VGS = 4.5 V.
Fig.9
Fig.10 Temperature coefficient of gate-source
threshold voltage;
V GS ( th ) at T j
k = -------------------------------------------V GS ( th ) at 25 °C
Temperature coefficient of drain-source
on-resistance;
R DS ( on ) at T j
k = ---------------------------------------------R DS ( on ) at 25 °C
typical RDS(on).
April 1995
typical VGS(th) at 1 mA.
7
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
April 1995
EUROPEAN
PROJECTION
8
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
9
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
NOTES
April 1995
10
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
NOTES
April 1995
11
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
137107/00/01/pp12
Date of release: April 1995
Document order number:
9397 750 02442