DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BSN20W N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2000 Mar 10 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20W FEATURES PINNING - SOT323 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL • High-speed switching DESCRIPTION 1 g gate • No secondary breakdown. 2 s source 3 d drain APPLICATIONS • Thin and thick film circuits • General purpose fast switching applications. handbook, halfpage d 3 DESCRIPTION g N-channel enhancement mode vertical D-MOS transistor in a 3 pin plastic SOT323 SMD package. 1 2 Top view CAUTION s MAM356 Marking code: M8- = made in Hong Kong; M8t = made in Malaysia (or Bangkok). The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT VDS drain-source voltage (DC) VGSth gate-source threshold voltage 1.8 V ID drain current (DC) 80 mA RDSon drain-source on-state resistance 15 Ω Ptot total power dissipation 200 mW 50 Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board. 2000 Mar 10 2 V Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 50 V − ±20 V drain current (DC) − 80 mA peak drain current − 300 mA − 200 mW storage temperature −65 +150 °C operating junction temperature −65 +150 °C VDS drain-source voltage (DC) VGSO gate-source voltage (DC) ID IDM Ptot total power dissipation Tstg Tj open drain Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 625 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 10 µA 50 − − V VGSth gate-source threshold voltage VGS = VDS ; ID = 1 mA 0.4 − 1.8 V IDSS drain-source leakage current VGS = 0; VDS = 40 V − − 1 µA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − ±100 nA RDSon drain-source on-state resistance VGS = 10 V; ID = 80 mA − 8 15 Ω VGS = 5 V; ID = 80 mA − 14 20 Ω VGS = 2.5 V; ID = 10 mA − 18 30 Ω Ciss input capacitance VGS = 0; VDS = 10 V; f = 1 MHz − 8 15 pF Coss output capacitance VGS = 0; VDS = 10 V; f = 1 MHz − 7 15 pF Crss reverse transfer capacitance VGS = 0; VDS = 10 V; f = 1 MHz − 2 5 pF Switching times ton turn-on time VGS = 0 to 10 V; VDD = 20 V; ID = 80 mA − 2 5 ns toff turn-off time VGS = 10 to 0 V; VDD = 20 V; ID = 80 mA − 5 10 ns 2000 Mar 10 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20W MDA183 300 MRA781 handbook,30 halfpage handbook, halfpage Ptot (mW) C (pF) 200 20 100 10 (1) (2) (3) 0 0 0 50 100 0 200 150 Tamb (oC) 5 10 15 20 25 VDS (V) VGS = 0; Tj = 25 °C; f = 1 MHz. (1) Ciss. (2) Coss. (3) Crss. Device mounted on a printed-circuit board. Fig.3 Capacitance as a function of drain-source voltage; typical values. Fig.2 Power derating curve. handbook, halfpage MRA782 V = 10 V GS 500 ID (mA) 400 MRA783 500 handbook, halfpage 7V ID (mA) 400 5V 300 4V 200 300 200 3V 100 0 100 2.5 V 0 0 4 8 VDS (V) 12 Tj = 25 °C. 2 4 6 8 10 VGS (V) VDS = 10 V; Tj = 25 °C. Fig.4 Output characteristics; typical values. 2000 Mar 10 0 Fig.5 Transfer characteristics; typical values. 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20W MDA163 24 MDA162 80 handbook, halfpage handbook, halfpage RDSon RDSon (Ω) (Ω) (1) 60 16 (2) 40 (3) 8 20 0 1 102 10 ID (mA) 0 103 0 Tj = 25 °C. (1) VGS = 2.5 V. (2) VGS = 5 V. (3) VGS = 10 V. 6 4 8 10 VGS (V) VDS = 0.1 V; Tj = 25 °C. Fig.7 Fig.6 2 Drain-source on-state resistance as a function of drain current; typical values. Drain-source on-state resistance as a function of gate-source voltage; typical values. MRA784 MRA785 2 handbook, halfpage handbook,1.2 halfpage k k (2) 1.1 1.6 (1) 1 1.2 0.9 0.8 0.8 0.7 −50 0 50 100 Tj (oC) 0.4 −50 150 0 50 100 Tj (oC) 150 R DSon at T j k = ---------------------------------------R DSon at 25 °C V GSth at T j k = ------------------------------------V GSth at 25°C Typical VGSth at 1 mA. Typical RDSon at 100 mA / 10 V. (1) ID = 10 mA; VGS = 2.5 V. (2) ID = 100 mA; VGS = 10 V. Fig.8 Fig.9 Temperature coefficient of gate-source threshold voltage. 2000 Mar 10 5 Temperature coefficient of drain-source on-state resistance. Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2000 Mar 10 REFERENCES IEC JEDEC EIAJ SC-70 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20W DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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