DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High speed switching • No secondary breakdown. d handbook, halfpage 1 APPLICATIONS 2 3 g • Intended for use as a Line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. s MAM144 DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. Fig.1 Simplified outline and symbol. PINNING - TO-92 variant PIN SYMBOL DESCRIPTION 1 s source 2 g gate 3 d drain CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VDS drain-source voltage (DC) VGSO gate-source voltage (DC) open drain VGSth gate-source threshold voltage ID = −1 mA; VDS = VGS ID drain current (DC) RDSon drain-source on-state resistance Ptot total power dissipation 1995 Apr 07 MIN. MAX. UNIT − −50 V − ±20 V −0.8 −2 V − −170 mA ID = −170 mA; VGS = −10 V − 10 Ω up to Tamb = 25 °C − 830 mW 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − −50 V − ±20 V drain current (DC) − −170 mA peak drain current − −520 mA − 830 mW storage temperature −65 +150 °C operating junction temperature − 150 °C VDS drain-source voltage (DC) VGSO gate-source voltage (DC) ID IDM Ptot total power dissipation Tstg Tj open drain up to Tamb = 25 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 150 K/W Note to the “Limiting values” and “Thermal characteristics” 1. Device mounted on a printed-circuit board, maximum lead length 4 mm. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = −10 µA −50 − − V VGSth gate-source threshold voltage VDS = VGS ; ID = −1 mA −0.8 − −2 V IDSS drain-source leakage current VGS = 0; VDS = −40 V − − −100 nA VGS = 0; VDS = −50 V − − −10 µA VGS = 0; VDS = −50 V; Tj = 125 °C − − −60 µA VDS = 0; VGS = ±20 V − − ±10 nA − − 10 Ω IGSS gate leakage current RDSon drain-source on-state resistance VGS = −10 V; ID = −170 mA yfs forward transfer admittance VDS = −25 V; ID = −170 mA 50 − − mS Ciss input capacitance VGS = 0; VDS = −25 V; f = 1 MHz − 25 45 pF Coss output capacitance VGS = 0; VDS = −25 V; f = 1 MHz − 15 25 pF Crss reverse transfer capacitance VGS = 0; VDS = −25 V; f = 1 MHz − 3.5 12 pF Switching times (see Figs 2 and 3) ton turn-on time VGS = 0 to −10 V; VDD = −40 V; ID = −200 mA − 3 − ns toff turn-off time VGS = −10 to 0 V; VDD = −40 V; ID = −200 mA − 7 − ns 1995 Apr 07 3 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 VDD = 40 V handbook, halfpage handbook, halfpage 10 % INPUT 90 % ID 0 10 % 10 V OUTPUT 50 Ω 90 % MLD189 t on Fig.2 Switching time test circuit. MBB690 Fig.3 Input and output waveforms. MLD190 1.0 P tot t off MLD193 10 3 handbook, halfpage handbook, halfpage ID (mA) (W) 0.8 tp = 10 ms (1) 100 ms 10 2 1s 0.6 DC 0.4 tp δ= T P 10 0.2 t tp T 0 1 0 50 100 150 200 T amb ( oC) 1 10 V DS δ = 0.01. Tamb = 25 °C. (1) RDSon limitation. Fig.4 Power derating curve. 1995 Apr 07 Fig.5 DC SOAR. 4 (V) 10 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 MLD191 80 MLD197 600 handbook, halfpage handbook, halfpage C (pF) ID VGS = 10 V 7.5 V 6V (mA) 60 400 5V 40 4V C iss 20 200 Coss 3V C rss 2.5 V 0 10 0 20 V DS (V) 0 30 0 2 4 6 8 10 V DS (V) 12 VGS = 0. Tj = 25 °C. f = 1 MHz. Tj = 25 °C. Fig.6 Capacitance as a function of drain source voltage; typical values. Fig.7 Typical output characteristics. MLD196 MLD198 60 600 handbook, halfpage handbook, halfpage VGS = 2.5 V R DSon ID 3V 4V 5V (Ω) (mA) 400 40 200 20 7.5 V 10 V 0 0 0 2 4 6 1 8 10 V GS (V) 102 I D (mA) 103 Tj = 25 °C. VDS = −10 V. Tj = 25 °C. Fig.9 Fig.8 Typical transfer characteristics. 1995 Apr 07 10 5 Drain-source on-state resistance as a function of drain current; typical values. Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 MLD195 1.2 MLD194 1.8 handbook, halfpage handbook, halfpage k k (1) (2) 1.0 1.4 0.8 1.0 0.6 0.6 50 0 50 100 o 150 50 0 50 100 T j ( C) R DSon at T j k = ---------------------------------------R DSon at 25 °C V GSth at T j k = ------------------------------------V GSth at 25°C (1) ID = −170 mA; VGS = −10 V. (2) ID = −20 mA; VGS = −2.4 V. ID = −1 mA; VDS = VGS. Fig.10 Temperature coefficient of gate-source threshold voltage. Fig.11 Temperature coefficient of drain-source on-state resistance. MLD192 10 3 handbook, full pagewidth R th j-a (K/W) 150 o T j ( C) δ= 0.75 0.5 10 2 0.2 0.1 10 0.05 0.02 0.01 tp δ= T P 1 0 t tp T 10 1 10 6 10 5 10 4 10 3 10 2 10 1 1 10 10 2 t p (s) Tamb = 25 °C. Fig.12 Thermal resistance from junction to ambient as a function of pulse time; typical values. 1995 Apr 07 6 10 3 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 PACKAGE OUTLINE handbook, full pagewidth 0.40 min 4.2 max 5.2 max 1.6 12.7 min 0.48 0.40 1 4.8 max 2 2.54 3 0.66 0.56 2.5 max (1) Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. Fig.13 TO-92 variant. 1995 Apr 07 7 MBC015 - 1 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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