PHILIPS BSN20

DISCRETE SEMICONDUCTORS
DATA SHEET
BSN20
N-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC13b
1997 Jun 18
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
FEATURES
PINNING - SOT23
• Direct interface to C-MOS, TTL, etc.
PIN
SYMBOL
• High-speed switching
DESCRIPTION
1
g
gate
• No secondary breakdown.
2
s
source
3
d
drain
APPLICATIONS
• Thin and thick film circuits
• General purpose fast switching applications.
handbook, halfpage
3
d
DESCRIPTION
g
N-channel enhancement mode vertical D-MOS transistor
in a SOT23 SMD package.
1
CAUTION
Top view
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
s
2
MAM273
Marking code: M8p.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VDS
drain-source voltage (DC)
50
V
ID
drain current (DC)
100
mA
RDSon
drain-source on-state resistance
ID = 100 mA; VGS = 10 V
15
Ω
VGSth
gate-source threshold voltage
ID = 1 mA; VGS = VDS
1.8
V
1997 Jun 18
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS
drain-source voltage (DC)
VGSO
gate-source voltage (DC)
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
CONDITIONS
MIN.
open drain
MAX.
UNIT
−
50
V
−
±20
V
−
100
mA
−
300
mA
up to Tamb = 25 °C; note 1
−
300
mW
up to Tamb = 25 °C; note 2
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
note 1
430
K/W
note 2
500
K/W
Notes to the Limiting values and Thermal characteristics
1. Device mounted on a ceramic substrate, 10 × 8 × 0.7 mm.
2. Device mounted on a printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 10 µA
50
−
−
V
VGSth
gate-source threshold voltage
VDS = VGS ; ID = 1 mA
0.4
−
1.8
V
IDSS
drain-source leakage current
VGS = 0; VDS = 40 V
−
−
1
µA
IGSS
gate-source leakage current
VDS = 0; VGS = ±20 V
−
−
±100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 100 mA
−
8
15
Ω
VGS = 5 V; ID = 100 mA
−
14
20
Ω
VGS = 2.5 V; ID = 10 mA
−
18
30
Ω
yfs
forward transfer admittance
VDS = 10 V; ID = 100 mA
40
80
−
mS
Ciss
input capacitance
VGS = 0; VDS = 10 V; f = 1 MHz
−
8
15
pF
Coss
output capacitance
VGS = 0; VDS = 10 V; f = 1 MHz
−
7
15
pF
Crss
reverse transfer capacitance
VGS = 0; VDS = 10 V; f = 1 MHz
−
2
5
pF
Switching times
ton
turn-on time
VGS = 0 to 10 V; VDD = 20 V;
ID = 100 mA
−
2
5
ns
toff
turn-off time
VGS = 10 to 0 V; VDD = 20 V;
ID = 100 mA
−
5
10
ns
1997 Jun 18
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
MBB755
0.4
handbook,
halfpage
MRA781
handbook,30
halfpage
C
(pF)
Ptot
(W)
(1)
20
(2)
0.2
10
(1)
(2)
(3)
0
0
0
50
100
0
150
200
Tamb (oC)
5
10
15
20
25
VDS (V)
VGS = 0; Tj = 25 °C; f = 1 MHz.
(1) Cis.
(2) Cos.
(3) Crs.
(1) Mounted on a ceramic substrate.
(2) Mounted on a printed-circuit board.
Fig.3
Capacitance as a function of drain source
voltage; typical values.
Fig.2 Power derating curves.
MRA783
MRA782
handbook, halfpage
handbook, halfpage
V
= 10 V
GS
500
ID
(mA)
400
500
ID
(mA)
7V
400
5V
300
300
4V
200
200
3V
100
0
100
2.5 V
0
0
4
8
VDS (V)
12
2
4
6
8
10
VGS (V)
VDS = 10 V; Tj = 25 °C.
Tj = 25 °C.
Fig.4 Typical output characteristics.
1997 Jun 18
0
Fig.5 Typical transfer characteristics.
4
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
MDA163
24
MDA162
80
handbook, halfpage
handbook, halfpage
RDSon
RDSon
(Ω)
(Ω)
(1)
60
16
(2)
40
(3)
8
20
0
1
102
10
ID (mA)
0
103
0
Tj = 25 °C.
(1) VGS = 2.5 V.
(2) VGS = 5 V.
(3) VGS = 10 V.
6
4
8
10
VGS (V)
VDS = 0.1 V; Tj = 25 °C.
Fig.7
Fig.6
2
Drain-source on-state resistance as a
function of drain current; typical values.
Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
MRA784
MRA785
2
handbook, halfpage
handbook,1.2
halfpage
k
k
(2)
1.1
1.6
(1)
1
1.2
0.9
0.8
0.8
0.7
−50
0
50
100
Tj (oC)
0.4
−50
150
100
Tj (oC)
150
(1) ID = 10 mA; VGS = 2.5 V.
(2) ID = 100 mA; VGS = 10 V.
Typical VGSth at 1 mA.
Temperature coefficient of gate-source
threshold voltage.
1997 Jun 18
50
R DSon at T j
k = ---------------------------------------R DSon at 25 °C
V GSth at T j
k = ------------------------------------V GSth at 25°C
Fig.8
0
Fig.9
5
Temperature coefficient of drain-source
on-state resistance.
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1997 Jun 18
EUROPEAN
PROJECTION
6
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 18
7
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/02/pp8
Date of release: 1997 Jun 18
Document order number:
9397 750 02308