DF N1 01 0D -3 PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Logic-level compatible Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications • • • • Relay driver Power management in automotive and industrial applications LED driver DC-to-DC converter 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 80 V VGS gate-source voltage -20 - 20 V ID drain current - - 1.1 A - 345 450 mΩ VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 10 V; ID = 1.1 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain 4 D drain Simplified outline Graphic symbol D 1 4 3 G 2 S Transparent top view 017aaa255 DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package PMXB360ENEA Name Description Version DFN1010D-3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm SOT1215 7. Marking Table 4. Marking codes Type number Marking code PMXB360ENEA 11 10 10 MARKING CODE (EXAMPLE) READING DIRECTION YEAR DATE CODE VENDOR CODE PIN 1 INDICATION MARK MARK-FREE AREA READING EXAMPLE: 11 01 10 Fig. 1. aaa-008041 DFN1010D-3 (SOT1215) binary marking code description PMXB360ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 2 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 80 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 1.1 A VGS = 10 V; Tamb = 100 °C [1] - 0.7 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 4.4 A EDS(AL)S non-repetitive drain-source avalanche energy Tj(init) = 25 °C; ID = 0.17 A; DUT in - 7.1 mJ total power dissipation Tamb = 25 °C [2] - 400 mW [1] - 1070 mW - 6250 mW Ptot avalanche (unclamped) Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - 0.8 A HBM [3] - 2000 V ESD maximum rating VESD electrostatic discharge voltage [1] [2] [3] PMXB360ENEA Product data sheet Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Measured between all pins. All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 3 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET 017aaa123 120 017aaa124 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 3. - 25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature aaa-009009 10 Limit RDSon = VDS/ID ID (A) tp = 10 µs 1 tp = 100 µs DC; Tsp = 25 °C 10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 tp = 1 ms tp = 10 ms tp = 100 ms 10-2 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air PMXB360ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 Min Typ Max Unit [1] - 271 312 K/W [2] - 102 117 K/W © NXP N.V. 2013. All rights reserved 4 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to solder point [1] [2] Min Typ Max Unit - 15 20 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-008918 103 Zth(j-a) (K/W) 102 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0 0.01 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 aaa-008919 duty cycle = 1 0.75 0.5 0.33 Zth(j-a) (K/W) 102 10 0.02 0.01 0 1 10-3 0.25 0.2 0.1 0.05 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 6. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMXB360ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 5 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.3 1.7 2.7 V IDSS drain leakage current VDS = 80 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 15 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -15 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 10 V; ID = 1.1 A; Tj = 25 °C - 345 450 mΩ VGS = 10 V; ID = 1.1 A; Tj = 150 °C - 660 887 mΩ VGS = 4.5 V; ID = 1 A; Tj = 25 °C - 390 540 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 1.1 A; Tj = 25 °C - 3.2 - S RG gate resistance f = 1 MHz; Tj = 25 °C - 0.9 - Ω Dynamic characteristics QG(tot) total gate charge VDS = 40 V; ID = 1.1 A; VGS = 10 V; - 3 4.5 nC QGS gate-source charge Tj = 25 °C - 0.4 - nC QGD gate-drain charge - 0.6 - nC Ciss input capacitance VDS = 40 V; f = 1 MHz; VGS = 0 V; - 130 - pF Coss output capacitance Tj = 25 °C - 20 - pF Crss reverse transfer capacitance - 11 - pF td(on) turn-on delay time VDS = 40 V; ID = 1.1 A; VGS = 10 V; - 2 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 3.5 - ns td(off) turn-off delay time - 9 - ns tf fall time - 3 - ns - 0.8 1.2 V Source-drain diode VSD source-drain voltage PMXB360ENEA Product data sheet IS = 0.8 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 6 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET aaa-009010 4.4 10 V ID (A) aaa-009011 10-3 4.5 V 3.6 V ID (A) 3.3 10-4 3.3 V min 2.2 typ max 3V 10-5 2.8 V 1.1 VGS = 2.5 V 0 Fig. 7. 0 1 2 3 4 VDS (V) 10-6 5 0 1 2 VGS (V) 3 Tj = 25 °C Tj = 25 °C; VDS = 10 V Output characteristics: drain current as a Fig. 8. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-009012 1400 2.8 V RDSon (mΩ) 3V 3.3 V aaa-009013 1400 RDSon (mΩ) 1200 3.6 V 1050 1000 800 Tj = 150 °C 700 4.5 V 350 600 400 VGS = 10 V Tj = 25 °C 200 0 0 1.6 3.2 ID (A) 0 4.8 Tj = 25 °C Fig. 9. Product data sheet 4 8 VGS (V) 12 ID = 1.1 A Drain-source on-state resistance as a function of drain current; typical values PMXB360ENEA 0 Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 7 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET aaa-009014 4.4 aaa-009015 2.0 ID (A) a 3.3 1.5 2.2 1.0 1.1 Tj = 150 °C 0 0 1 2 Tj = 25 °C 3 VGS (V) 0.5 -60 4 VDS > ID × RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-009016 3 VGS(th) (V) 0 60 120 aaa-009017 C (pF) Ciss 102 2 typ Coss min 1 0 -60 0 10 60 120 Tj (°C) 1 10-1 180 ID = 0.25 mA; VDS = VGS Product data sheet Crss 1 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 13. Gate-source threshold voltage as a function of junction temperature PMXB360ENEA 180 Fig. 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values 103 max Tj (°C) Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 8 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET aaa-009018 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 1 2 QG (nC) Fig. 16. MOSFET transistor: Gate charge waveform definitions 3 ID = 1.1 A; VDS = 40 V; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-009019 3.2 IS (A) 2.4 1.6 0.8 Tj = 150 °C 0 0 0.4 Tj = 25 °C 0.8 VSD (V) 1.2 VGS = 0 V Fig. 17. Source current as a function of source-drain voltage; typical values PMXB360ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 9 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET 11. Test information P duty cycle δ = t2 t1 t2 t1 t 006aaa812 Fig. 18. Duty cycle definition 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 0.87 0.95 0.75 1 0.95 1.05 0.22 0.30 2 0.16 0.24 0.1 3 0.04 max 0.34 0.40 Dimensions in mm 0.17 0.25 0.245 0.325 1.05 1.15 0.195 0.275 13-03-05 Fig. 19. Package outline DFN1010D-3 (SOT1215) PMXB360ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 10 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN1010D-3 package SOT1215 1.2 0.45 (2x) 0.3 1.1 0.35 (2x) 0.4 0.25 (2x) 0.75 0.3 0.5 1.5 1.4 0.4 0.5 0.4 0.3 0.5 1.3 0.4 0.3 0.4 0.5 1.3 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1215_fr Fig. 20. Reflow soldering footprint for DFN1010D-3 (SOT1215) PMXB360ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 11 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMXB360ENEA v.1 20130916 Product data sheet - - PMXB360ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 12 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 13 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMXB360ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 14 / 15 PMXB360ENEA NXP Semiconductors 80 V, N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 11.1 Test information ................................................... 10 Quality information ............................................. 10 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 September 2013 PMXB360ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 15 / 15