DF N1 0 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -8 - 8 V ID drain current - - 600 mA - 470 620 mΩ Per transistor VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics (per transistor) RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 600 mA; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 Simplified outline Graphic symbol source TR1 D2 D1 1 6 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 7 2 3 G1 5 8 G2 4 S1 S2 017aaa256 6. Ordering information Table 3. Ordering information Type number Package PMDXB600UNE Name Description Version DFN1010B-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1216 7. Marking Table 4. Marking codes Type number Marking code PMDXB600UNE 00 10 00 MARKING CODE (EXAMPLE) READING DIRECTION MARK-FREE AREA PIN 1 INDICATION MARK VENDOR CODE READING EXAMPLE: 11 01 10 Fig. 1. YEAR DATE CODE aaa-007665 DFN1010B-6 (SOT1216) binary marking code description PMDXB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 2 / 15 PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -8 8 V ID drain current Per transistor VGS = 4.5 V; Tamb = 25 °C [1] - 600 mA VGS = 4.5 V; Tamb = 100 °C [1] - 400 mA - 2.5 A [2] - 265 mW [1] - 380 mW - 4025 mW - 0.4 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Source-drain diode IS source current Tamb = 25 °C [1] Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C PMDXB600UNE Product data sheet [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 3 / 15 PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 017aaa001 120 017aaa002 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. - 25 25 75 0 - 75 125 175 Tamb (°C) Normalized total power dissipation as a function of ambient temperature Fig. 3. - 25 25 75 125 175 Tamb (°C) Normalized continuous drain current as a function of ambient temperature aaa-008997 10 Limit RDSon = VDS/ID ID (A) tp = 10 µs 1 tp = 100 µs 10-1 tp = 1 ms DC; Tsp = 25 °C tp = 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-2 10-1 1 tp = 100 ms 10 102 VDS (V) IDM = single pulse Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - 410 475 K/W [2] - 285 330 K/W Per transistor Rth(j-a) PMDXB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 4 / 15 PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point [1] [2] Conditions Min Typ Max Unit - 27 31 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . aaa-006902 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-006903 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 10 10-3 0.02 0.01 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 6. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDXB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 5 / 15 PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 0.95 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 4.5 V; ID = 600 mA; Tj = 25 °C - 470 620 mΩ VGS = 4.5 V; ID = 600 mA; Tj = 150 °C - 760 1000 mΩ VGS = 2.5 V; ID = 500 mA; Tj = 25 °C - 620 850 mΩ VGS = 1.8 V; ID = 100 mA; Tj = 25 °C - 845 1300 mΩ VGS = 1.5 V; ID = 10 mA; Tj = 25 °C - 1125 3000 mΩ VGS = 1.2 V; ID = 1 mA; Tj = 25 °C - 2210 - mΩ VDS = 5 V; ID = 0.6 A; Tj = 25 °C - 1 - S RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics (per transistor) QG(tot) total gate charge VDS = 10 V; ID = 600 mA; VGS = 4.5 V; - 0.4 0.7 nC QGS gate-source charge Tj = 25 °C - 0.1 - nC QGD gate-drain charge - 0.1 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 21.3 - pF Coss output capacitance Tj = 25 °C - 5.4 - pF Crss reverse transfer capacitance - 4.2 - pF td(on) turn-on delay time VDS = 10 V; ID = 600 mA; VGS = 4.5 V; - 5.6 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 9.2 - ns td(off) turn-off delay time - 19 - ns tf fall time - 51 - ns - 0.8 1.2 V Source-drain diode (per transistor) VSD source-drain voltage PMDXB600UNE Product data sheet IS = 0.36 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 6 / 15 PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET aaa-008998 2.5 ID (A) aaa-008999 10-3 4.5 V ID (A) 2.0 2.5 V 10-4 1.5 min 1.0 1.8 V 0.5 typ max 10-5 1.5 V VGS = 1.2 V 0 Fig. 7. 0 1 2 3 10-6 4 VDS (V) 0 0.5 1.0 VGS (V) 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 8. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-009000 3 RDSon (Ω) 1.5 V 1.2 V 1.8 V aaa-009001 3 2V RDSon (Ω) 2.5 V 2 2 3V 1 1 Tj = 150 °C VGS = 4.5 V 0 0 0.5 1.0 1.5 2.0 ID (A) Tj = 25 °C 0 2.5 Tj = 25 °C Fig. 9. Product data sheet 1 2 3 4 VGS (V) 5 ID = 0.6 A Drain-source on-state resistance as a function of drain current; typical values PMDXB600UNE 0 Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 7 / 15 PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET aaa-009002 2.5 aaa-009003 2.0 ID (A) a 2.0 1.5 1.5 1.0 1.0 Tj = 150 °C 0.5 0 0 1 Tj = 25 °C 2 0.5 3 4 VGS (V) 0 -60 5 VDS > ID × RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-009004 1.5 0 60 120 180 Fig. 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-009005 102 VGS(th) (V) Tj (°C) C (pF) 1.0 Ciss 10 max Coss 0.5 typ Crss min 0 -60 0 60 120 Tj (°C) 1 10-1 180 ID = 0.25 mA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 13. Gate-source threshold voltage as a function of junction temperature PMDXB600UNE 1 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 8 / 15 PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET aaa-009006 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0 0.1 0.2 0.3 Fig. 16. MOSFET transistor: Gate charge waveform definitions 0.4 0.5 QG (nC) ID = 0.6 A; VDS = 10 V; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-009007 2.5 IS (A) 2.0 1.5 1.0 0.5 0 Tj = 150 °C 0 0.4 Tj = 25 °C 0.8 1.2 1.6 2.0 VSD (V) VGS = 0 V Fig. 17. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 18. Duty cycle definition PMDXB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 9 / 15 PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 12. Package outline 0.35 0.35 0.15 0.23 1 3 0.125 0.205 0.22 0.30 0.95 1.05 6 0.04 max 2 0.34 0.40 Dimensions in mm 5 4 0.32 0.40 0.275 0.275 1.05 1.15 13-03-05 Fig. 19. Package outline DFN1010B-6 (SOT1216) PMDXB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 10 / 15 PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN1010B-6 package SOT1216 0.9 0.35 0.35 0.15 0.2 (6x) 0.15 1.3 1.2 0.35 0.25 0.5 0.6 0.35 0.25 1.1 0.3 (6x) 1 1.35 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1216_fr Fig. 20. Reflow soldering footprint for DFN1010B-6 (SOT1216) PMDXB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 11 / 15 PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMDXB600UNE v.1 20130916 Product data sheet - - PMDXB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 12 / 15 PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 September 2013 PMDXB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013. All rights reserved 15 / 15