RF COMMUNICATIONS PRODUCTS OUTPUT/INPUT INPUT/OUTPUT OUTPUT/INPUT ENCH1 SA630 Single pole double throw (SPDT) switch Product Specification Replaces data of October 10, 1991 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Single pole double throw (SPDT) switch DESCRIPTION SA630 PIN CONFIGURATION The SA630 is a wideband RF switch fabricated in BiCMOS technology and incorporating on-chip CMOS/TTL compatible drivers. Its primary function is to switch signals in the frequency range DC 1GHz from one 50Ω channel to another. The switch is activated by a CMOS/TTL compatible signal applied to the enable channel 1 pin (ENCH1). D and N Packages The extremely low current consumption makes the SA630 ideal for portable applications. The excellent isolation and low loss makes this a suitable replacement for PIN diodes. VDD 1 8 OUT1 GND 2 7 AC GND INPUT 3 6 GND ENCH1 4 5 OUT2 SR00578 Figure 1. Pin Configuration The SA630 is available in an 8-pin dual in-line plastic package and an 8-pin SO (surface mounted miniature) package. •Low distortion (IP3 intercept +33dBm) •Good 50Ω match (return loss 18dB at 400MHz) •Full ESD protection •Bidirectional operation FEATURES •Wideband (DC - 1GHz) •Low through loss (1dB typical at 200MHz) •Unused input is terminated internally in 50Ω •Excellent overload capability (1dB gain compression point +18dBm APPLICATIONS •Digital transceiver front-end switch •Antenna switch •Filter selection •Video switch •FSK transmitter at 300MHz) •Low DC power (170µA from 5V supply) •Fast switching (20ns typical) •Good isolation (off channel isolation 60dB at 100MHz) ORDERING INFORMATION TEMPERATURE RANGE ORDER CODE DWG # 8-Pin Plastic Dual In-Line Package (DIP) DESCRIPTION -40 to +85°C SA630N SOT97-1 8-Pin Plastic Small Outline (SO) package (Surface-mount) -40 to +85°C SA630D SOT96-1 BLOCK DIAGRAM OUTPUT/INPUT INPUT/OUTPUT OUTPUT/INPUT ENCH1 SR00579 Figure 2. Block Diagram RECOMMENDED OPERATING CONDITIONS SYMBOL RATING UNITS Supply voltage 3.0 to 5.5V V TA Operating ambient temperature range SA Grade -40 to +85 °C TJ Operating junction temperature range SA Grade -40 to +105 °C VDD 1997 Nov 07 PARAMETER 2 853-1577 18666 Philips Semiconductors Product specification Single pole double throw (SPDT) switch SA630 EQUIVALENT CIRCUIT VDD 1 +5V 8 OUT1 20kΩ CONTROL LOGIC 50Ω 7 2 AC BYPASS 50Ω 6 3 INPUT 20kΩ 4 ENCH1 OUT2 5 SR00580 Figure 3. Equivalent Circuit ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VDD Supply voltage PD Power dissipation, TA = 25oC (still air)1 8-Pin Plastic DIP 8-Pin Plastic SO RATING UNITS -0.5 to +5.5 V 1160 780 mW mW TJMAX Maximum operating junction temperature 150 °C PMAX Maximum power input/output +20 dBm TSTG Storage temperature range -65 to +150 °C NOTES: 1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θJA: 8-Pin DIP: θJA = 108°C/W 8-Pin SO: θJA = 158°C/W DC ELECTRICAL CHARACTERISTICS VDD = +5V, TA = 25°C; unless otherwise stated. LIMITS SYMBOL IDD PARAMETER TEST CONDITIONS Supply current voltage1 SA630 UNITS MIN TYP MAX 40 170 300 µA 1.1 1.25 VT TTL/CMOS logic threshold 1.4 V VIH Logic 1 level Enable channel 1 2.0 VDD V VIL Logic 0 level Enable channel 2 -0.3 0.8 V IIL ENCH1 input current ENCH1 = 0.4V -1 0 1 µA IIH ENCH1 input current ENCH1 = 2.4V -1 0 1 µA NOTE: 1. The ENCH1 input must be connected to a valid Logic Level for proper operation of the SA630. 1997 Nov 07 3 Philips Semiconductors Product specification Single pole double throw (SPDT) switch SA630 AC ELECTRICAL CHARACTERISTICS1 - D PACKAGE VDD = +5V, TA = 25°C; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS SA630 MIN DC - 100MHz 500MHz 900MHz S21, S12 Insertion loss (ON channel) S21, S12 Isolation (OFF channel)2 10MHz 100MHz 500MHz 900MHz S11, S22 S11, S22 tD tr, tf 1 1.4 2 2.8 dB dB Return loss (ON channel) DC - 400MHz 900MHz 20 12 dB Return loss (OFF channel) DC - 400MHz 900MHz 17 13 dB 50% TTL to 90/10% RF 20 ns 90%/10% to 10%/90% RF 5 ns 165 mVP-P Switching speeds (on-off rise/fall time) 24 Switching transients P-1dB MAX 80 60 50 30 Switching speed (on-off delay) 70 UNITS TYP DC - 1GHz +18 dBm IP3 Third-order intermodulation intercept 100MHz +33 dBm IP2 Second-order intermodulation intercept 100MHz +52 dBm Noise figure (ZO = 50Ω ) 100MHz 900MHz 1.0 2.0 dB NF 1dB gain compression NOTE: 1. All measurements include the effects of the D package SA630 Evaluation Board (see Figure 4B). Measurement system impedance is 50Ω. 2. The placement of the AC bypass capacitor is critical to achieve these specifications. See the applications section for more details. AC ELECTRICAL CHARACTERISTICS1 - N PACKAGE VDD = +5V, TA = 25°C; all other characteristics similar to the D-Package, unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS SA630 MIN DC - 100MHz 500MHz 900MHz S21, S12 Insertion loss (ON channel) S21, S12 Isolation (OFF channel) 10MHz 100MHz 500MHz 900MHz NF Noise figure (ZO = 50Ω ) 100MHz 900MHz 58 TYP UNITS MAX 1 1.4 2.5 dB 68 50 37 15 dB 1.0 2.5 dB NOTE: 1. All measurements include the effects of the N package SA630 Evaluation Board (see Figure 4C). Measurement system impedance is 50Ω. should be placed straight down as close to the device as practical. For better isolation between the two channels at higher frequencies, it is also advisable to run the two output/input traces at an angle. This also minimizes any inductive coupling between the two traces. The power supply bypass capacitor should be placed close to the device. Figure 10 shows the frequency response of the SA630. The loss matching between the two channels is excellent to 1.2GHz as shown in Figure 13. APPLICATIONS The typical applications schematic and printed circuit board layout of the SA630 evaluation board is shown in Figure 4. The layout of the board is simple, but a few cautions need to be observed. The input and output traces should be 50Ω. The placement of the AC bypass capacitor is extremely critical if a symmetric isolation between the two channels is desired. The trace from Pin 7 should be drawn back towards the package and then be routed downwards. The capacitor 1997 Nov 07 4 Philips Semiconductors Product specification Single pole double throw (SPDT) switch SA630 VDD +5V D and N Packages 0.1µF 0.01µF 1 GND INPUT 0.01µF 8 2 7 3 6 4 5 OUT1 AC GND 0.01µF GND OUT2 0.01µF ENCH1 a. Evaluation Board Schematic b. 630 D-Package Board Layout 630N1 7/91 c. 630 N-Package Board Layout Figure 4. Board and Package Graphics 1997 Nov 07 5 SR00581 Philips Semiconductors Product specification Single pole double throw (SPDT) switch SA630 shown in Figure 8. The cascaded configuration will have a higher loss but greater than 35dB of isolation at 1GHz and greater than 65dB @ 500MHz can be obtained from this configuration. By modifying the enable control, an RF multiplexer/ de-multiplexer or antenna selector can be constructed. The simplicity of SA630 coupled with its ease of use and high performance lends itself to many innovative applications. The isolation and matching of the two channels over frequency is shown in Figures 15 and 17, respectively. The SA630 is a very versatile part and can be used in many applications. Figure 5 shows a block diagram of a typical Digital RF transceiver front-end. In this application the SA630 replaces the duplexer which is typically very bulky and lossy. Due to the low power consumption of the device, it is ideally suited for handheld applications such as in CT2 cordless telephones. The SA630 can also be used to generate Amplitude Shift Keying (ASK) or On-Off Keying (OOK) and Frequency Shift Keying (FSK) signals for digital RF communications systems. Block diagrams for these applications are shown in Figures 6 and 7, respectively. The SA630 switch terminates the OFF channel in 50Ω. The 50Ω resistor is internal and is in series with the external AC bypass capacitor. Matching to impedances other than 50Ω can be achieved by adding a resistor in series with the AC bypass capacitor (e.g., 25Ω additional to match to a 75Ω environment). For applications that require a higher isolation at 1GHz than obtained from a single SA630, several SA630s can be cascaded as 5200 602A 630 IF OUT KEYPAD & DISPLAY MICRO CONTROLLER Tx/Rx 5200 VCO MODULATION SR00582 Figure 5. A Typical TDMA/Digital RF Transceiver System Front-End ASK OUTPUT OUT1/IN1 630 630 OSCILLATOR ENABLE CH1 IN/OUT 50Ω 630 TTL DATA SR00583 630 Figure 6. Amplitude Shift Keying (ASK) Generator OUT2/IN2 f1 FSK OUTPUT ENABLE Figure 8. 630 ENABLE CH1 f2 TTL DATA SR00584 Figure 7. Frequency Shift Keying (FSK) Gnerator 1997 Nov 07 6 SR00585 Philips Semiconductors Product specification Single pole double throw (SPDT) switch SA630 200 +85°C 5V 180 +25°C 4V -40°C 140 120 3V S21 (dB) SUPPLY CURRENT ( µ A) 160 –1 100 80 60 40 20 TA = +25°C –2 0 3 3.5 4 4.5 5 5.5 10 6 100 FREQUENCY (MHz) SUPPLY VOLTAGE (V) 1000 SR00588 SR00586 Figure 11. Loss vs. Frequency and VDD for D-Package-Expanded Detail- Figure 9. Supply Current vs. VDD and Temperature 0 0 5V –2 4V –2 –4 S21 (dB) S21 (dB) 3V –4 –6 –6 CH2 –8 VDD = 5V TA = +25°C TA = +25°C –10 –8 10 100 1000 10 2000 FREQUENCY (MHz) 1997 Nov 07 1000 2000 SR00589 SR00587 Figure 10. 100 FREQUENCY (MHz) Figure 12. Loss vs. Frequency and VDD for D-Package 7 Loss Matching vs. Frequency for N-Package (DIP) Philips Semiconductors Product specification Single pole double throw (SPDT) switch SA630 0 0 –1 –10 –2 –20 –30 –4 S21 (dB) S21 (dB) –3 –40 3V –5 4V –50 CH1 –6 5V –60 –7 VDD = T 5V A = +25°C –70 TA = +25°C –8 10 100 1000 2000 –80 10 FREQUENCY (MHz) 100 SR00590 Figure 13. Loss Matching vs. Frequency; CH1 vs. CH2 for D-Pakage 2000 SR00592 Figure 15. Isolation vs. Frequency and VDD for D-Package 0 0 -40°C –10 –1 +25°C –20 –2 +85°C –30 S21 (dB) –3 S21 (dB) 1000 FREQUENCY (MHz) –4 –40 CH2 –5 –50 –6 –60 –70 –7 TA = +25°C VDD = 5V VDD = 5V –80 –8 10 100 1000 10 2000 100 1000 2000 FREQUENCY (MHz) FREQUENCY (MHz) SR00593 SR00591 Figure 14. 1997 Nov 07 Figure 16. Isolation Matching vs. Frequency for N-Package (DIP) Loss vs. Frequency and Temperature for D-Package 8 Philips Semiconductors Product specification Single pole double throw (SPDT) switch SA630 0 0 –10 –5 –20 –10 S22 (dB) S21 (dB) –30 –40 –15 CH2 –50 –20 CH1 –60 –25 VDD = 5V –70 TA = +25°C VDD = +5V TA = +25°C –80 10 100 –30 1000 10 2000 100 1000 2000 FREQUENCY (MHz) FREQUENCY (MHz) SR00597 SR00594 Figure 19. Output Match On-Channel vs. Frequency Figure 17. Isolation Matching vs. Frequency; CH1 vs. CH2 for D-Package 0 0 –5 –5 –10 –10 –15 S22 (dB) S11 (dB) CH1: 3V 3V –15 CH1: 5V 4V CH2: 5V –20 –20 5V –25 –25 TA = +25°C TA = +25°C –30 10 100 1000 –30 2000 10 FREQUENCY (MHz) SR00595 1000 2000 SR00597 Figure 18. Input Match On-Channel vs. Frequency and VDD 1997 Nov 07 100 FREQUENCY (MHz) Figure 20. OFF-Channel Match vs. Frequency and VDD 9 Philips Semiconductors Product specification Single pole double throw (SPDT) switch SA630 0 60 –5 50 IP2 INTERCEPT POINT (dBm) S22 (dB) –10 +85°C –15 +25°C –20 40 30 IP3 20 -40°C –25 10 VDD = 5V TA = +25°C –30 0 10 100 1000 2000 3 3.5 FREQUENCY (MHz) 4 4.5 5 SUPPLY VOLTAGE (V) 5.5 SR00633 SR00598 Figure 21. Figure 23. OFF Channel Match vs. Frequency and Temperature Intercept Points vs.VDD 5 20 18 4.5 5V TA = +25°C 4 16 ZO = 50Ω 4V 3.5 14 NOISE FIGURE (dB) 3V 12 P-1 (dBm) 6 10 8 3 2.5 2 6 1.5 4 1 2 0.5 3V 4V 5V TA = +25°C 0 0 10 100 1000 10 2000 1997 Nov 07 1000 2000 SR00634 SR00599 Figure 22. 100 FREQUENCY (MHz) FREQUENCY (MHz) Figure 24. Noise Figure vs. Frequency and VDD for D-Package P-1 dB vs. Frequency and VDD 10 Philips Semiconductors Product specification Single pole double throw (SPDT) switch SA630 ENCH1 (Pin4) OUT1 (Pin 8) SR00635 Figure 25. 1997 Nov 07 Switching Speed; fIN = 100MHz at -6dBm, VDD = 5V 11 Philips Semiconductors Product specification Single pole double throw (SPDT) switch SO8: plastic small outline package; 8 leads; body width 3.9mm 1997 Nov 07 12 SA630 SOT96-1 Philips Semiconductors Product specification Single pole double throw (SPDT) switch DIP8: plastic dual in-line package; 8 leads (300 mil) 1997 Nov 07 SA630 SOT97-1 13 Philips Semiconductors Product specification Single pole double throw (SPDT) switch SA630 DEFINITIONS Data Sheet Identification Product Status Definition Objective Specification Formative or in Design This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. Preliminary Specification Preproduction Product This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product Specification Full Production This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product. Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Copyright Philips Electronics North America Corporation 1997 All rights reserved. Printed in U.S.A. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 1997 Nov 07 14