BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Specially designed for low loss RF switching up to 1 GHz 1.3 Applications n Various RF switching applications such as: u Passive loop through for VCR tuner u Transceiver switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Lins(on) on-state insertion loss RS = RL = 50 Ω; f ≤ 1 GHz; VSK = VDK = 0 V; IF = 0 mA ISLoff off-state isolation RDSon VGS(p) [1] Min Typ Max Unit - - 2 dB RS = RL = 50 Ω; f ≤ 1 GHz; VSK = VDK = 5 V; IF = 1 mA 30 - - dB drain-source on-state resistance VKS = 0 V; ID = 1 mA - 12 20 Ω gate-source pinch-off voltage VDS = 1 V; ID = 20 µA - −3 −4 V IF = diode forward current. Conditions [1] BF1108; BF1108R NXP Semiconductors Silicon RF switches 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BF1108 (SOT143B) 1 FET gate; diode anode 2 diode cathode 3 source [1] 4 drain [1] 4 1 3 4 2 1 3 2 001aai042 BF1108R (SOT143R) 1 FET gate; diode anode 2 diode cathode 3 source [1] 4 drain [1] 3 2 3 4 2 1 4 1 001aai043 [1] Drain and source are interchangeable. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF1108 - plastic surface-mounted package; 4 leads SOT143B BF1108R - plastic surface-mounted package; reverse pinning; 4 leads SOT143R 4. Marking Table 4. Marking Type number Marking code BF1108 NGp BF1108R NHp BF1108_BF1108R_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 May 2008 2 of 10 BF1108; BF1108R NXP Semiconductors Silicon RF switches 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit FET VDS drain-source voltage - 3 V VSD source-drain voltage - 3 V VDG drain-gate voltage - 7 V VSG source-gate voltage - 7 V ID drain current - 10 mA VR reverse voltage - 35 V IF forward current - 100 mA Diode FET and diode Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C 6. Thermal characteristics Table 6. Symbol Rth(j-sp) [1] Thermal characteristics Parameter Conditions [1] thermal resistance from junction to solder point Typ Unit 250 K/W Soldering point of FET gate and diode anode lead. 7. Static characteristics Table 7. Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VDS = 0 V; IGS = 0.1 mA 7 - - V FET V(BR)GSS gate-source breakdown voltage VGS(p) gate-source pinch-off voltage VDS = 1 V; ID = 20 µA - −3 −4 V IDSX drain cut-off current VGS = −5 V; VDS = 2 V - - 10 µA IGSS gate leakage current VGS = −5 V; VDS = 0 V - - 100 nA RDSon drain-source on-state resistance VGS = 0 V; ID = 1 mA - 12 20 Ω VF forward voltage IF = 10 mA - - 1 V IR reverse current VR = 25 V - - 50 nA VR = 20 V; Tamb = 75 °C - - 1 µA Diode BF1108_BF1108R_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 May 2008 3 of 10 BF1108; BF1108R NXP Semiconductors Silicon RF switches 8. Dynamic characteristics Table 8. Dynamic characteristics Common cathode; Tamb = 25 °C. Symbol Parameter Conditions Min Typ Max Unit RS = RL = 50 Ω; f ≤ 1 GHz - - 2 dB RS = RL = 50 Ω; f = 1 GHz - 1.3 - dB RS = RL = 75 Ω; f ≤ 1 GHz - - 3 dB RS = RL = 50 Ω; f ≤ 1 GHz 30 - - dB RS = RL = 50 Ω; f = 1 GHz - 38 - dB RS = RL = 75 Ω; f ≤ 1 GHz 30 - - dB - 12 20 Ω - 1 - pF - 0.65 0.9 pF VSK = VDK = 5 V; IF = 1 mA - 1 - pF VSK = VDK = 0 V; IF = 0 mA - 0.65 0.9 pF - 1.1 - pF - - 0.7 Ω FET and diode Lins(on) ISLoff on-state insertion loss off-state isolation VSK = VDK = 0 V; IF = 0 mA [1] VSK = VDK = 5 V; IF = 1 mA RDSon drain-source on-state resistance VKS = 0 V; ID = 1 mA Ci input capacitance f = 1 MHz [2] VSK = VDK = 5 V; IF = 1 mA VSK = VDK = 0 V; IF = 0 mA output capacitance Co f = 1 MHz [2] Diode Cd rD diode capacitance diode forward resistance f = 1 MHz; VR = 0 V IF = 2 mA; f = 100 MHz [1] IF = diode forward current. [2] Ci is the series connection of CGS and CGK; Co is the series connection of CGD and CGK. [3] Guaranteed on AQL basis; inspection level S4, AQL 1.0. BF1108_BF1108R_4 Product data sheet [3] © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 May 2008 4 of 10 BF1108; BF1108R NXP Semiconductors Silicon RF switches mgs357 0 mgs358 0 Lins(on) ISLoff −1 −20 −2 −40 −3 −4 0 400 800 f (MHz) −60 1200 0 400 800 f (MHz) 1200 VSK = VDK = 0 V; RS = RL = 50 Ω; IF = 0 mA (diode forward current). VSK = VDK = 5 V; RS = RL = 50 Ω; IF = 1 mA (diode forward current). Measured in test circuit see Figure 3. Measured in test circuit see Figure 3. Fig 1. On-state insertion loss as a function of frequency; typical values Fig 2. Off-state isolation as a function of frequency; typical values V 1 nF 100 kΩ 47 kΩ BF1108/BF1108R 50 Ω input 1 nF 1 nF 50 Ω output 4.7 kΩ 100 kΩ V 1 nF mbl028 On-state: V = 0 V. Off-state: V = 5 V. Fig 3. Test circuit BF1108_BF1108R_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 May 2008 5 of 10 BF1108; BF1108R NXP Semiconductors Silicon RF switches 9. Package outline Plastic surface-mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mm 1.1 0.9 OUTLINE VERSION A1 max bp b1 c D E 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 e 1.9 e1 HE Lp Q v w y 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 REFERENCES IEC JEDEC JEITA ISSUE DATE 04-11-16 06-03-16 SOT143B Fig 4. EUROPEAN PROJECTION Package outline SOT143B BF1108_BF1108R_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 May 2008 6 of 10 BF1108; BF1108R NXP Semiconductors Silicon RF switches Plastic surface-mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.55 0.25 0.45 0.25 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC SOT143R Fig 5. JEDEC JEITA SC-61AA EUROPEAN PROJECTION ISSUE DATE 04-11-16 06-03-16 Package outline SOT143R BF1108_BF1108R_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 May 2008 7 of 10 BF1108; BF1108R NXP Semiconductors Silicon RF switches 10. Abbreviations Table 9. Abbreviations Acronym Description AQL Acceptable Quality Level MOSFET Metal-Oxide Semiconductor Field-Effect Transistor RF Radio Frequency S4 Special inspection level 4 VCR VideoCassette Recorder 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BF1108_BF1108R_4 20080529 Product data sheet - Modifications: BF1108_1108R_3 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Symbol notation has been adapted to comply with the current guidelines of NXP Semiconductors. BF1108_1108R_3 (9397 750 06477) 19991118 Product data sheet - BF1108_1108R_2 BF1108_1108R_2 (9397 750 06073) 19990819 Product data sheet - BF1108_1108R_1 BF1108_1108R_1 (9397 750 05899) 19990517 Preliminary specification - - BF1108_BF1108R_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 May 2008 8 of 10 BF1108; BF1108R NXP Semiconductors Silicon RF switches 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BF1108_BF1108R_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 May 2008 9 of 10 BF1108; BF1108R NXP Semiconductors Silicon RF switches 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 May 2008 Document identifier: BF1108_BF1108R_4