DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 19 Philips Semiconductors Product specification Controlled avalanche rectifiers 1N5059 to 1N5062 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature • Low leakage current 2/3 page k(Datasheet) • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM047 Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) PARAMETER CONDITIONS MIN. MAX. UNIT 1N5059 − 200 V 1N5060 − 400 V 1N5061 − 600 V 1N5062 − 800 V 1N5059 − 200 V 1N5060 − 400 V 1N5061 − 600 V 1N5062 − 800 V 1N5059 − 200 V 1N5060 − 400 V 1N5061 − 600 V 1N5062 − 800 V repetitive peak reverse voltage crest working reverse voltage continuous reverse voltage average forward current Ttp = 45 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 − 2.0 A Tamb = 80 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − 0.8 A IFSM non-repetitive peak forward current t = 10 ms half sinewave − 50 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off − 20 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1996 Jun 19 see Fig.5 2 Philips Semiconductors Product specification Controlled avalanche rectifiers 1N5059 to 1N5062 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R PARAMETER CONDITIONS MIN. TYP. IF = 1 A; Tj = Tj max; see Fig.6 − − 0.8 V IF = 1 A; see Fig.6 − − 1.0 V 1N5059 225 − − V 1N5060 450 − − V 1N5061 650 − − V forward voltage reverse avalanche breakdown voltage UNIT IR = 0.1 mA 900 − − V VR = VRRMmax; see Fig.7 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.7 − − 150 µA 1N5062 IR MAX. reverse current trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 − 3 − µs Cd diode capacitance − 50 − pF VR = 0 V; f = 1 MHz; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 VALUE 46 K/W 100 K/W Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of Handbook SC01”. 1996 Jun 19 3 UNIT Philips Semiconductors Product specification Controlled avalanche rectifiers 1N5059 to 1N5062 GRAPHICAL DATA MBG044 3 MBG054 1.6 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 1.2 2 0.8 1 0.4 0 0 40 80 120 0 160 200 Ttp (°C) a = 1.57; VR = VRRMmax; δ = 0.5. Lead length 10 mm. Fig.2 40 0 80 120 200 160 Tamb (°C) a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.9. Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MGC745 4 MBH388 200 handbook, halfpage handbook, halfpage P (W) 3 2.5 Tj (°C) 2 1.57 1.42 2 100 a=3 59 60 61 62 1 0 0 0 1 2 IF(AV) (A) 3 0 400 800 VR (V) 1200 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.4 Solid line = VR. Dotted line = VRRM; δ = 0.5. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 Jun 19 Fig.5 4 Maximum permissible junction temperature as a function of reverse voltage. Philips Semiconductors Product specification Controlled avalanche rectifiers 1N5059 to 1N5062 MGC735 MGC734 3 10halfpage handbook, 15 handbook, halfpage IR (µA) IF (A) 10 2 10 max 10 5 1 10 −1 0 0 1 VF (V) 2 40 80 120 160 200 Tj (oC) Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. Fig.6 0 VR = VRRMmax. Forward current as a function of forward voltage; maximum values. Fig.7 Reverse current as a function of junction temperature; maximum values. MBG031 10 2 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 10 2 3 1 1 10 VR (V) 10 2 MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 1996 Jun 19 Fig.9 Device mounted on a printed-circuit board. 5 Philips Semiconductors Product specification Controlled avalanche rectifiers handbook, full pagewidth 1N5059 to 1N5062 IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1996 Jun 19 6 MAM057 Philips Semiconductors Product specification Controlled avalanche rectifiers PACKAGE OUTLINE handbook, full pagewidth k 3.81 max 28 min Dimensions in mm. , 4.57 max 1N5059 to 1N5062 a 28 min 0.81 max MBC880 Fig.11 SOD57. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 19 7