APT25GLQ120JCU2 ISOTOP® Boost chopper Trench + Field Stop fast IGBT4 Power module VCES = 1200V IC = 25A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C G Features • Trench + Field Stop Fast IGBT 4 Technology Low voltage drop Low leakage current Low switching losses Low leakage current RBSOA and SCSOA rated • Boost SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • ISOTOP® Package (SOT-227) Very low stray inductance High level of integration E K E G C ISOTOP® Benefits • Low conduction losses • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 45 25 50 ±20 170 Tj = 150°C 50A @ 1100V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V February, 2013 Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APT25GLQ120JCU2 – Rev 2 Symbol VCES APT25GLQ120JCU2 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 25A Tj = 150°C VGE = VCE , IC = 0.8mA VGE = 20V, VCE = 0V Min Typ 1.7 5.0 2.05 2.6 5.8 Min Typ Max Unit 250 2.4 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC = 25A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 25A RG = 20Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 25A RG = 20Ω TJ = 25°C VGE = ±15V TJ = 150°C VCE = 600V IC = 25A TJ = 25°C RG = 20Ω TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 1430 115 85 pF 0.2 µC 130 20 300 45 ns 150 35 ns 350 80 1.2 1.8 1.5 2.2 mJ 100 A mJ Chopper SiC diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance VR=1200V Min 1200 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C IF = 15A, VR = 600V di/dt = 400A/µs IF = 15A Typ Max 70 200 15 1.5 2.2 500 700 100 f = 1MHz, VR = 400V 74 f = 1MHz, VR = 800V 54 www.microsemi.com Unit V µA A 1.8 3 V February, 2013 IRM Test Conditions nC pF 2-5 APT25GLQ120JCU2 – Rev 2 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APT25GLQ120JCU2 Thermal and package characteristics Symbol Characteristic Min Typ IGBT SiC Diode RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) 2500 -55 RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight SOT-227 (ISOTOP®) Package Outline °C/W V 175 300 1.5 29.2 °C N.m g 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) r = 4.0 (.157) (2 places) Unit 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) Max 0.9 1.1 20 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 3.3 (.129) 3.6 (.143) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) 38.0 (1.496) 38.2 (1.504) ISOTOP® is a registered trademark of ST Microelectronics NV Operating Frequency vs Collector Current 250 ZVS 150 February, 2013 200 VCE=600V D=50% R G=20 Ω T J=150°C Tc=75°C ZCS 100 50 Hard switching 0 0 10 20 30 40 50 IC (A) www.microsemi.com 3-5 APT25GLQ120JCU2 – Rev 2 Fmax, Operating Frequency (kHz) Typical Performance Curve APT25GLQ120JCU2 Output Characteristics (VGE=15V) 50 Output Characteristics 50 TJ = 150°C 40 TJ=25°C 30 20 10 VGE=15V 20 VGE=9V 10 0 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 50 TJ=25°C 4 VCE = 600V VGE = 15V RG = 20 Ω TJ = 150°C 3 Eoff 5 E (mJ) 30 20 1 3 4 Eon 2 TJ=150°C 10 1 0 0 5 6 7 8 9 10 11 12 0 13 10 20 30 40 50 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 4 60 Eon 3 50 Eoff 40 IC (A) E (mJ) 2 VCE (V) Energy losses vs Collector Current 6 40 IC (A) VGE=19V 30 TJ=150°C IC (A) IC (A) 40 2 VCE = 600V VGE =15V IC = 25A TJ = 150°C 1 30 20 VGE=15V TJ=150°C RG=20 Ω 10 0 0 0 20 40 60 Gate Resistance (ohms) 80 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 D = 0.9 February, 2013 0.7 0.6 0.5 0.4 0.2 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APT25GLQ120JCU2 – Rev 2 Thermal Impedance (°C/W) 1 APT25GLQ120JCU2 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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