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APT40GLQ120JCU2
VCES = 1200V
IC = 40A @ Tc = 80°C
ISOTOP® Boost chopper
High speed Trench + Field Stop IGBT4
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch
K
CR1
C
G
Features
• High speed Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- RBSOA and SCSOA rated
•
SiC Schottky Diode (CR1)
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
•
•
•
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
E
K
E
C
G
ISOTOP®
Benefits
• Low conduction losses
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ICM
VGE
PD
RBSOA
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
Tj = 150°C
Max ratings
1200
80
40
160
±20
312
80A @ 1100V
Unit
V
November, 2012
IC
Parameter
Collector - Emitter Breakdown Voltage
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
1-6
APT40GLQ120JCU2 – Rev 0
Symbol
VCES
APT40GLQ120JCU2
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 40A
Tj = 150°C
VGE = VCE, IC = 1mA
VGE = ±20V, VCE = 0V
Min
Typ
1.7
2.05
2.6
5.8
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
5.0
Max
25
2.4
Unit
µA
6.5
120
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
QG
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate charge
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Td(off)
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
VGE = 15V, IC = 40A
VCE = 960V
Resistive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 40A
RG = 12Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 600V
IC = 40A
RG = 12Ω
Tj = 25°C
VGE = ±15V
VBus = 600V
Tj = 150°C
IC = 40A
Tj = 25°C
RG = 12Ω
Tj = 150°C
VGE ≤15V ; VBus = 600V
tp ≤10µs ; Tj = 150°C
Typ
2300
150
130
pF
185
nC
30
57
ns
290
16
30
49
366
ns
48
1.9
2.25
1.2
2.25
mJ
150
A
Chopper SiC diode ratings and characteristics (CR1)
IF
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
VF
Diode Forward Voltage
QC
Total Capacitive Charge
C
Total Capacitance
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
IF = 20A
Tj = 175°C
IF = 20A, VR = 600V
di/dt =1000A/µs
Typ
Max
64
112
20
1.6
2.3
400
2000
80
f = 1MHz, VR = 200V
192
f = 1MHz, VR = 400V
138
www.microsemi.com
Unit
V
µA
A
1.8
3
V
November, 2012
IRM
Test Conditions
nC
pF
2-6
APT40GLQ120JCU2 – Rev 0
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APT40GLQ120JCU2
Thermal and package characteristics
Symbol Characteristic
Min
Typ
IGBT
SiC Diode
RthJC
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
Max
0.48
0.8
20
4000
-55
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
Collector
Cathode
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Emitter
Gate
Dimensions in Millimeters and (Inches)
Operating Frequency vs Collector Current
240
200
VCE=600V
D=50%
R G=12Ω
T J=150°C
T C=75°C
ZVS
160
ZCS
November, 2012
120
80
40
hard
switching
0
0
10
20
30
40
50
IC (A)
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3-6
APT40GLQ120JCU2 – Rev 0
Fmax, Operating Frequency (kHz)
Typical IGBT Performance Curve
APT40GLQ120JCU2
Output Characteristics (VGE=15V)
Output Characteristics
80
80
TJ = 150°C
VGE=20V
60
TJ=25°C
VGE=13V
40
IC (A)
IC (A)
60
TJ=150°C
VGE=15V
40
VGE=9V
20
20
0
0
0
0.5
1
1.5
2 2.5
VCE (V)
3
3.5
0
4
8
TJ=25°C
6
E (mJ)
50
40
TJ=150°C
30
3
4
VCE (V)
VCE = 600V
VGE = 15V
RG = 12Ω
TJ = 150°C
70
60
2
5
6
Energy losses vs Collector Current
Transfert Characteristics
80
IC (A)
1
Eon
4
Eoff
2
20
10
TJ=25°C
0
5
6
7
8
0
9
10
11
0
12
20
40
60
80
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
4
100
VCE = 600V
VGE =15V
IC = 40A
TJ = 150°C
80
IC (A)
E (mJ)
3
Eon
Eoff
60
40
2
VGE=15V
TJ=150°C
RG=12Ω
20
1
0
10
15
20
25
30
Gate Resistance (ohms)
35
0
300
600
VCE (V)
900
1200
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
D = 0.9
0.3
0.2
0.1
0.7
0.5
November, 2012
0.4
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
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1
10
4-6
APT40GLQ120JCU2 – Rev 0
Thermal Impedance (°C/W)
0.5
APT40GLQ120JCU2
Typical chopper SiC diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1
0.8
D = 0.9
0.6
0.7
0.5
0.4
0.3
0.2
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
40
200
30
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
TJ=75°C
20
TJ=125°C
10
TJ=175°C
150
100
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
TJ=75°C
TJ=125°C
50
TJ=175°C
0
400
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
1200
1000
800
600
400
200
1
10
100
VR Reverse Voltage
November, 2012
0
1000
ISOTOP® is a registered trademark of ST Microelectronics NV
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5-6
APT40GLQ120JCU2 – Rev 0
C, Capacitance (pF)
1400
APT40GLQ120JCU2
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PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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6-6
APT40GLQ120JCU2 – Rev 0
November, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.