APT33N90JCU2 ISOTOP® Boost chopper VDSS = 900V RDSon = 120m max @ Tj = 25°C ID = 33A @ Tc = 25°C Super Junction MOSFET Power Module K D Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch Features G S K S G D ISOTOP - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 900 33 25 75 ±20 120 290 8.8 2.9 1940 Unit V A V m W A October, 2012 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APT33N90JCU2 – Rev 1 Symbol VDSS APT33N90JCU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ 2.5 500 100 3 Tj = 25°C Tj = 125°C VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V Max 100 Unit 120 3.5 100 m V nA Max Unit µA Dynamic Characteristics Symbol Characteristic Input Capacitance Ciss Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min Typ 6.8 0.33 nF 270 VGS = 10V VBus = 400V ID = 26A nC 32 115 70 Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 26A RG = 7.5 20 ns 400 25 Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5 Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5 1.5 mJ 0.75 2.1 mJ 0.85 Chopper diode ratings and characteristics IF VF Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt=200A/µs www.microsemi.com Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 100 500 Tj = 125°C 30 2.6 3.2 1.8 Tj = 25°C 300 Tj = 125°C 380 Tj = 25°C 360 Tj = 125°C 1700 Unit V µA A 3.1 V ns October, 2012 IRM Test Conditions nC 2–6 APT33N90JCU2 – Rev 1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APT33N90JCU2 Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Typ CoolMOS Diode 2500 -40 RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight Max 0.43 1.05 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) Drain Cathode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) Typical CoolMOS performance Curve 150 ZCS 100 50 Hard switching 0 10 12.5 15 17.5 20 22.5 25 2.5 2.0 1.5 1.0 0.5 25 100 125 150 4 Switching Energy (mJ) Eon and Eoff (mJ) VDS=600V RG=7.5Ω TJ=125°C L=100µH 3 75 Switching Energy vs Gate Resistance Switching Energy vs Current 4 50 TJ, Junction Temperature (°C) ID, Drain Current (A) Eon 2 Eoff 1 0 October, 2012 ZVS 200 ON resistance vs Temperature 3.0 Eon 3 Eoff 2 VDS=600V ID=26A TJ=125°C L=100µH 1 0 5 10 15 20 25 30 ID, Drain Current (A) 35 40 5 10 15 20 25 30 35 Gate Resistance (Ohms) www.microsemi.com 3–6 APT33N90JCU2 – Rev 1 Frequency (kHz) VDS=600V D=50% RG=7.5Ω TJ=125°C TC=75°C RDS(on), Drain to Source ON resistance (Normalized) Operating Frequency vs Drain Current 250 APT33N90JCU2 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 80 5V 40 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 Maximum Safe Operating Area 10 ms ID, DC Drain Current (A) ID, Drain Current (A) 100 µs Single pulse TJ=150°C TC=25°C 950 925 900 25 75 100 125 30 25 20 15 10 5 1 0 1 10 100 1000 25 VDS, Drain to Source Voltage (V) 1000 Coss 100 10 Crss 1 0 150 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com 10 VDS=400V ID=26A TJ=25°C 8 6 October, 2012 Ciss 10000 50 75 100 125 TC, Case Temperature (°C) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 50 DC Drain Current vs Case Temperature 35 limited by RDSon 10 975 TJ, Junction Temperature (°C) 1000 100 1000 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 4–6 APT33N90JCU2 – Rev 1 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 120 APT33N90JCU2 Typical Chopper diode performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 500 trr, Reverse Recovery Time (ns) 3.0 TJ=125°C VR=800V 400 300 45 A 200 30 A 15 A 100 0 0 4.0 200 TJ=125°C VR=800V 45 A 3 30 A 2 15 A 1 0 0 200 400 600 800 1000 1200 30 A TJ=125°C VR=800V 25 15 A 20 45 A 15 10 5 0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 50 160 Duty Cycle = 0.5 TJ=175°C 40 IF(AV) (A) 120 80 30 20 10 40 0 0 1 10 100 VR, Reverse Voltage (V) 1000 25 50 75 100 125 150 175 Case Temperature (ºC) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 5–6 October, 2012 C, Capacitance (pF) 800 1000 1200 30 -diF/dt (A/µs) 200 600 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 4 400 -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) APT33N90JCU2 – Rev 1 IF, Forward Current (A) 80 APT33N90JCU2 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 6–6 APT33N90JCU2 – Rev 1 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.