APT8052BFLL APT8052SFLL 800V 15A POWER MOS 7 R FREDFET 0.520Ω BFLL D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg SFLL • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol TO-247 D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT8052BFLL_SFLL UNIT Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25°C 15 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 298 Watts Linear Derating Factor 2.38 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 60 -55 to 150 °C 300 Amps 15 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 7.5A) TYP MAX UNIT Volts 0.520 Ohms Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 7-2004 Characteristic / Test Conditions 050-7059 Rev B Symbol APT8052BFLL_SFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg 3 Total Gate Charge Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 400V tf ID = 15A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 215 VDD = 533V, VGS = 15V 90 ID = 15A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 7 RG = 1.6Ω Eon UNIT pF 60 75 11 50 9 6 23 ID = 15A @ 25°C Turn-off Delay Time MAX 2035 405 VDD = 400V Rise Time td(off) TYP VGS = 10V Qgs tr MIN µJ 420 VDD = 533V VGS = 15V ID = 15A, RG = 5Ω 110 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ Characteristic / Test Conditions MIN TYP MAX 15 Continuous Source Current (Body Diode) Amps Pulsed Source Current 1 (Body Diode) 60 Diode Forward Voltage 2 (VGS = 0V, IS = -15A) 1.3 Volts 18 V/ns Peak Diode Recovery dt UNIT dv/ 5 dt t rr Reverse Recovery Time (IS = -15A, di/dt = 100A/µs) Tj = 25°C 200 Tj = 125°C 350 Q rr Reverse Recovery Charge (IS = -15A, di/dt = 100A/µs) Tj = 25°C 0.69 Tj = 125°C 2.66 IRRM Peak Recovery Current (IS = -15A, di/dt = 100A/µs) Tj = 25°C 8 Tj = 125°C 14 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.42 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.35 0.7 0.25 0.5 0.20 Note: 0.15 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7059 Rev B 7-2004 0.45 0.30 0.3 0.10 0 Duty Factor D = t1/t2 0.1 Peak TJ = PDM x ZθJC + TC 0.05 10-5 t1 t2 SINGLE PULSE 0.05 10-4 10-3 °C/W 4 Starting Tj = +25°C, L = 10.76mH, RG = 25Ω, Peak IL = 15A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID15A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.40 UNIT 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT8052BFLL_SFLL RC MODEL Junction temp. (°C) 0.164 0.00592F Power (watts) 0.257 0.125F ID, DRAIN CURRENT (AMPERES) 40 Case temperature. (°C) 35 30 7V 25 6.5V 20 15 6V 10 5.5V 5 5V VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 30 25 20 15 TJ = +125°C TJ = -55°C 5 0 TJ = +25°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 14 12 10 8 6 4 2 0 25 I V D 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 5 10 15 20 25 30 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 = 7.5A GS = 10V 1.5 1.0 0.5 0.0 -50 D -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 NORMALIZED TO = 10V @ I = 7.5A GS 1.30 1.15 16 2.0 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 7-2004 10 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 050-7059 Rev B ID, DRAIN CURRENT (AMPERES) 35 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 40 8V VGS =15 &10 V Typical Performance Curves OPERATION HERE LIMITED BY RDS (ON) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Ciss 100µS 5 1mS 1 10mS .5 16 I D = 15A 12 VDS=100V VDS=250V 8 VDS=400V 4 0 0 Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE td(off) TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 30 tf 25 V DD R G = 5Ω T = 125°C J 30 V = 533V tr and tf (ns) 40 L = 100µH 20 G 20 = 533V DD R = 5Ω T = 125°C J L = 100µH 15 10 10 5 700 15 20 25 ID (A) FIGURE 14, DELAY TIMES vs CURRENT DD R G 600 0 10 V 15 20 25 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1000 = 533V DD I D E ON includes diode reverse recovery. Eon 300 200 Eoff 100 0 10 15 20 25 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT SWITCHING ENERGY (µJ) J 5 10 V L = 100µH 400 5 = 5Ω T = 125°C 500 tr 5 td(on) 0 100 35 50 td(on) and td(off) (ns) 100 10 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 60 SWITCHING ENERGY (µJ) Coss TC =+25°C TJ =+150°C SINGLE PULSE 20 40 60 80 100 120 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 7-2004 1,000 C, CAPACITANCE (pF) 10 .1 050-7059 Rev B APT8052BFLL_SFLL 7,000 IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 60 = 533V = 15A T = 125°C 800 J Eoff L = 100µH EON includes diode reverse recovery. 600 Eon 400 200 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT8052BFLL_SFLL 90% Gate Voltage 10% TJ125°C Gate Voltage td(off) TJ125°C td(on) Drain Voltage Drain Current 90% tr tf 90% 10% 5% 5% 0 Drain Current Drain Voltage 10% Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT15DF100 ID V DD V DS G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 Drain 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Gate Drain Source 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source Drain Gate Dimensions in Millimeters (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7059 Rev B 0.46 (.018) 0.56 (.022) {3 Plcs} 7-2004 3.50 (.138) 3.81 (.150)