APT8075BVFR
12A 0.750Ω
800V
POWER MOS V ®
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
TO-247
• 100% Avalanche Tested
D
FREDFET
• Lower Leakage
• Popular TO-247 Package
G
• Faster Switching
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8075BVFR
UNIT
800
Volts
Drain-Source Voltage
12
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
260
Watts
Linear Derating Factor
2.08
W/°C
VGSM
PD
TJ,TSTG
48
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
12
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
960
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
Volts
12
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
(VGS = 10V, 0.5 ID[Cont.])
MAX
0.75
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5632 Rev -
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8075BVFR
Characteristic
MIN
Test Conditions
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
2600
3120
Coss
Output Capacitance
VDS = 25V
270
380
Crss
Reverse Transfer Capacitance
f = 1 MHz
135
200
VGS = 10V
130
195
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
13
66
20
100
VGS = 15V
12
24
VDD = 0.5 VDSS
11
22
ID = ID [Cont.] @ 25°C
45
70
RG = 1.6Ω
8
16
Qg
3
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
t d(on)
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
12
Continuous Source Current (Body Diode)
IS
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
Peak Diode Recovery dv/dt
dt
MAX
48
(Body Diode)
(VGS = 0V, IS = -ID [Cont.])
5
UNIT
Amps
1.3
Volts
5
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
160
250
Tj = 125°C
305
525
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
1.8
Tj = 125°C
6.0
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
11
Tj = 125°C
18
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.48
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
40
VR = 200V.
0.5
0.2
0.1
0.1
0.05
0.005
0.02
Note:
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5632 Rev -
D=0.5
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 4.16mH, R = 25Ω, Peak I = 25A
j
G
L
5 I ≤ -I [Cont.], di/ = 100A/µs, V
S
D
DD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω,
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.05
UNIT
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT8075BVFR
25
20
5.5V
15
5V
10
5
4.5V
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
20
15
10
TJ = +125°C
5
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
10
8
6
4
2
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
5V
10
5
4.5V
1.4
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0
5
10
15
20
25
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
15
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5632 Rev -
ID, DRAIN CURRENT (AMPERES)
12
5.5V
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
25
20
4V
0
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
4V
0
80
160
240
320
400
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
0
VGS=6V, 7V, 10V & 15V
VGS=6V, 7V, 10V & 15V
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
25
APT8075BVFR
10,000
10µS
100µS
5,000
OPERATION HERE
LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
50
10
1mS
5
10mS
1
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
Ciss
1,000
Coss
500
DC
Crss
100
.1
20
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
5 10
50 100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
VDS=100V
16
VDS=250V
12
VDS=400V
8
4
0
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
50
TJ =+150°C
TJ =+25°C
10
5
1
.5
.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drain
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
050-5632 Rev -
2.21 (.087)
2.59 (.102)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058