1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology .... Beginning in 1984 with the introduction of Power MOS IV®, APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as a technological leader in MOS controlled devices and FREDs and to deliver products which contribute to our customers’ success in delivering higher performance power systems. Service .... Outstanding technology is only part of the story. A global network of stocking distributors, representatives and applications engineers are in place to support all phases of your product design, evaluation and procurement activities. In a world which demands superior execution, we’ve won awards as a service leader. Quality .... Our commitment is to excellence in all things we do. Whether you are evaluating the quality of our products, our technical assistance, our customer service or the quality of our internal communications systems, excellence is our standard. We understand that ISO9001, MIL-PRF-19500 and 8D are only the beginning. What’s New • • • • • • • • Power MOS V® MOSFETs and FREDFETs Thunderbolt IGBT™ .... Capable of replacing MOSFETs up to 150kHz Operation Fast IGBT .... for up to 40kHz Operation Center-Tap FREDs .... 200V - 1000V High Frequency FREDs .... Replacement for GaAs Rectifiers New Packages .... Tape and reel D3 PAK, T-MAX™ and TO-267 RF MOSFETs .... Operation up to 100MHz Expanded Hermetic Product Offering 2 Table of Contents 4-5 FAST RECOVERY EPITAXIAL DIODES (FREDs) 14-16 6-11 HERMETIC PACKAGED PRODUCTS 17-19 LOW GATE CHARGE POWER MOS IV® MOSFETs 12 CUSTOM PRODUCTS 19 RF MOSFETS 13 SALES OFFICES IGBT NEW GENERATION POWER MOS V® MOSFETs & FREDFETs Back Cover Packaging Information Package Quantity Per Tube TO-247 T-MAX™ TO-220 ISOTOP® TO-3 TO-264 D3 PAK 30 UNITS 30 UNITS 50 UNITS 10 UNITS 21 UNITS 25 UNITS 30 UNITS D3 PAK T/R 400/REEL Visit APT’s Website to Download Datasheets http://www.advancedpower.com 3 IGBT Technology Easy Paralleling .... A positive temperature coefficient of VCE(SAT) makes paralleling of NPT IGBTs as easy as with MOSFETs. NPT Technology .... Non-Punch-Through IGBTs are manufactured by fabricating the MOSFET structure on the surface of a lightly doped, n-substrate. No epi layer needs to be grown on the substrate. The wafer is thinned to 100µm after all high temperature processes are completed to reduce the n-drift region. The pn junction required on the back of the wafer is formed using a p+ implant and a light diffusion. Making the p+ region only a few µm thick keeps the voltage drop low in this region and controllable within very tight tolerances throughout the wafer. This construction provides an optimal tradeoff between VCE(SAT), switching speed and ruggedness. At full rated current, the VCE(SAT) may be higher than PT technologies, but under normal operating currents the difference is negligible. Tighter Electrical Parameters Distribution.... NPT technology has fewer and more easily controlled processing steps than with PT technologies. The end user can expect less lot-to-lot variation of electrical parameters than is possible with PT devices. Low Leakage Current .... No lifetime control is used in producing NPT IGBTs, eliminating the major cause of leakage current in alternative technologies. NPT Technology vs PT Technology Faster Switching .... Faster turn-off speeds and lower tail currents are key advantages of NPT technology. This is primarily due to the generation of fewer minority carriers during operation in NPT devices. MOS Structure PASSIVATION AL SOURCE OXIDE PASSIVATION METAL AL SOURCE DIELECTRIC POLY OXIDE EMITTER n+ p p+ n- METAL DIELECTRIC POLY EMITTER n+ p p+ n- n- Substrate Improved High Temperature Operation .... The turn-off speed and tail current of an NPT IGBT is not as temperature dependent as PT devices. These parameters remain relatively constant over the entire operating temperature range, resulting in approximately 50% less dynamic losses at high temperatures. n- epi Layer n++ epi Layer p+ Collector p++ Substrate/ Collector Thickness: NPT=100µm PT=400µm Improved Ruggedness .... NPT technology IGBTs are avalanche energy, SCSOA and RBSOA rated. Thunderbolt IGBT™ Family .... Designated by the “GT” in the part number, these devices are designed for operation up to 150kHz hard switching and 300kHz in resonant applications. Fast IGBT Family .... Designated by the “GF” in the part number, these devices are designed for operation up to 40kHz in hard switching applications. 4 NPT IGBT BVCES Volts Max VCE(ON) Volts IC1 (25°C) Amps IC2 Amps PD Watts Part Number Package Fast 1200 3.0 3.2 22 32 11 20 125 200 APT11GF120KR APT20GF120KR Thunderbolt DISCRETE (IGBT ONLY) 600 2.5 2.5 2.5 2.5 2.5 17 25 31 40 58 8 12 15 20 30 70 125 135 175 250 APT8GT60KR APT12GT60KR APT15GT60KR APT20GT60KR APT30GT60KR TO-220 *TO-220[K] TO-220 Fast TO-247 1200 600 600 3.2 3.2 2.5 2.5 2.5 2.5 2.5 2.5 2.7 2.5 32 52 25 31 40 58 80 116 75** 90 20 33 12 15 20 30 40 60 50 60 200 300 125 135 175 250 350 500 300 375 APT20GF120BR APT33GF120BR APT12GT60BR APT15GT60BR APT20GT60BR APT30GT60BR APT40GT60BR APT60GT60BR APT50GF60BR APT60GT60JR 1200 600 3.4 2.7 80 100** 50 100 390 390 APT50GF120B2R APT100GF60B2R T-MAX™ 1200 600 3.4 2.7 80 100** 50 100 390 390 APT50GF120LR APT100GF60LR TO-264 11 20 125 200 APT11GF120BRD APT20GF120BRD Fast Thunderbolt 600 TO-247 *TO-247[B] ISOTOP® TO-264 *TO-264[L] Fast COMBI (IGBT + FRED) Fast Thunderbolt 1200 3.0 3.2 22 32 T-Max TO-247 600 2.5 2.5 3.2 2.7 3.2 2.7 30 55 52 80 52 80 15 30 33 50 33 50 125 200 300 300 300 300 APT15GT60BRD APT30GT60BRD APT33GF120B2RD APT50GF60B2RD APT33GF120LRD APT50GF60LRD 600 3.4 3.4 3.4 2.7 60 75 100 140 40 50 60 100 390 460 520 390 APT40GF120JRD APT50GF120JRD APT60GF120JRD APT100GF60JRD 600 2.5 90 60 375 APT60GT60JRD 1200 600 1200 600 1200 ** IC1 limited by package 5 *T-MAX™[B2] T-MAX™ TO-264 E E G ISOTOP® 27 2 T- C SO *ISOTOP®[J] *Not to Scale Power MOS V® MOSFETs Avalanche Energy Rated .... All Power MOS V® devices are 100% tested and guaranteed for avalanche energy. A new generation of high power, high voltage Power MOSFETs .... Based on a patented self aligned interdigitated open cell structure, this new generation of MOSFETs offers many advantages over our previous MOS IV® generation and over industry standard, closed cell devices. Low Leakage Current .... Process improvements have made possible a substantial decrease over our previous generation. Maximum values for most products are now specified at 25µA at 25°C and 250µA at 125°C. Lower RDS(ON) .... A 25% reduction in on-resistance is gained by employing shallower junctions and “overactive area” bonding to increase the channel packing density per unit of silicon. The packing density has been optimized to minimize the JFET resistance and capacitances. Rugged Gate .... Improvements in gate oxide processing allow for specification of a high gate rupture voltage. All Power MOS V® MOSFETs are specified for ± 30V continuous operation and ± 40V transient operation. Faster Switching .... Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. Power MOS V® employs shorter gate fingers and a more efficient gate bus structure than our previous generation to further reduce the series gate resistance. Multiple bond pads and wires for both source and gate contacts have also reduced impedances. The result is decreased on, rise, delay and fall times. Total switching time has been reduced by up to 60% over our previous generation. Lower Cost .... A less complex fabrication process, improved manufacturing yields and reduced cycle times have all contributed to a more cost-effective device. Comparison of Lowest RDS(ON) in TO-247 Package Between New Generation Power MOS V® and Previous Generation Power MOS IV® Breakdown Voltage (V) New Generation Power MOS V® RDS(ON) (mΩ) Previous Generation Power MOS IV® RDS(ON) (mΩ) Improvement 1200 1000 800 600 500 400 300 200 100 1500 860 560 250 150 120 70 38 19 --1000 750 300 200 160 85 45 25 New 14% 25% 17% 25% 25% 18% 16% 24% 6 POWER MOS V® MOSFETs 1234567890 1234567890 1234567890 1234567890 1234567890 1234567890 BVDSS RDS(ON) ID(Cont.) PD Ciss(pF) EAS APT 1234567890 1234567890 1234567890 Volts Ohms Amps Watts Typ mJ Part No. 1234567890 1234567890 1234567890 1200 1.600 8 280 3050 1210 APT1201R6BVR 1234567890 1234567890 1234567890 1.500 10 370 3700 1300 APT1201R5BVR 1234567890 1234567890 1234567890 1234567890 1000 1.000 11 280 3050 1210 APT1001RBVR 1234567890 1234567890 1234567890 0.860 13 370 3700 1300 APT10086BVR 1234567890 1234567890 1234567890 800 0.750 12 260 2700 960 APT8075BVR 1234567890 1234567890 1234567890 1234567890 0.650 13 280 3050 1210 APT8065BVR 1234567890 1234567890 1234567890 0.560 16 370 3700 1300 APT8056BVR 1234567890 1234567890 1234567890 1234567890 600 0.450 15 250 2600 960 APT6045BVR 1234567890 1234567890 1234567890 0.350 18 280 3450 1210 APT6035BVR 1234567890 1234567890 1234567890 0.300 21 300 3750 1300 APT6030BVR 1234567890 1234567890 1234567890 0.250 25 370 4300 1300 APT6025BVR 1234567890 1234567890 1234567890 500 0.280 20 250 2650 960 APT5028BVR 1234567890 1234567890 1234567890 0.240 22 280 3600 1210 APT5024BVR 1234567890 1234567890 1234567890 0.200 26 300 3700 1300 APT5020BVR 1234567890 1234567890 1234567890 0.170 30 370 4400 1300 APT5017BVR 1234567890 1234567890 1234567890 0.150 32 370 4400 1300 APT5015BVR 1234567890 1234567890 1234567890 400 0.200 23 250 2650 960 APT4020BVR 1234567890 1234567890 1234567890 0.160 27 280 3350 1210 APT4016BVR 1234567890 1234567890 1234567890 0.140 28 300 3600 1300 APT4014BVR 1234567890 1234567890 1234567890 0.120 37 370 4500 1300 APT4012BVR 1234567890 1234567890 1234567890 300 0.085 40 300 4100 1300 APT30M85BVR 1234567890 1234567890 1234567890 1234567890 0.070 48 370 4890 1300 APT30M70BVR 1234567890 1234567890 1234567890 200 0.045 56 300 4050 1300 APT20M45BVR 1234567890 1234567890 1234567890 1234567890 0.040 59 300 4050 1300 APT20M40BVR 1234567890 1234567890 1234567890 0.038 67 370 5100 1300 APT20M38BVR 1234567890 1234567890 1234567890 100 0.025 75 ** 300 4300 1500 APT10M25BVR 1234567890 1234567890 1234567890 1234567890 0.019 75 ** 370 5100 1500 APT10M19BVR 1234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 Any devices1234567890 offered in the TO-264 package can be made available in the T-MAX™. 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 See page 191234567890 for details. 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1234567890 1234567890 1234567890 1234567890 1000 0.500 21 520 6600 2500 APT10050B2VR 1234567890 1234567890 1234567890 800 0.300 27 520 6600 2500 APT8030B2VR 1234567890 1234567890 1234567890 600 0.150 38 520 7500 2500 APT6015B2VR 1234567890 1234567890 1234567890 1234567890 500 0.140 37 450 5600 1600 APT5014B2VR 1234567890 1234567890 1234567890 0.100 47 520 7400 2500 APT5010B2VR 1234567890 1234567890 1234567890 1234567890 200 0.022 100** 520 8500 2500 APT20M22B2VR 1234567890 1234567890 1234567890 100 0.011 100** 520 8600 2500 APT10M11B2VR 1234567890 1234567890 ** IDmax limited by package 7 Package Style TO-247 *TO-247[B] T-Max *T-MAX™ [B2] *Not to Scale POWER MOS V® MOSFETs BVDSS Volts 1200 1000 800 600 500 400 300 200 100 1200 1000 800 600 500 400 300 200 100 123456789 123456789 123456789 123456789 123456789 123456789 RDS(ON) 123456789 123456789 123456789 Ohms 123456789 123456789 123456789 0.800 123456789 123456789 123456789 123456789 0.500 123456789 123456789 123456789 123456789 0.300 123456789 123456789 123456789 123456789 0.200 123456789 123456789 123456789 123456789 0.150 123456789 123456789 123456789 123456789 0.140 123456789 123456789 123456789 123456789 0.100 123456789 123456789 123456789 123456789 0.070 123456789 123456789 123456789 123456789 0.040 123456789 123456789 123456789 123456789 0.022 123456789 123456789 123456789 123456789 0.011 123456789 123456789 123456789 123456789 123456789 123456789 123456789 0.800 123456789 123456789 123456789 0.400 123456789 123456789 123456789 0.500 123456789 123456789 123456789 0.430 123456789 123456789 123456789 0.250 123456789 123456789 123456789 123456789 0.300 123456789 123456789 123456789 0.280 123456789 123456789 123456789 0.150 123456789 123456789 123456789 0.150 123456789 123456789 123456789 0.130 123456789 123456789 123456789 0.075 123456789 123456789 123456789 0.100 123456789 123456789 123456789 0.085 123456789 123456789 123456789 123456789 0.050 123456789 123456789 123456789 0.070 123456789 123456789 123456789 0.035 123456789 123456789 123456789 0.040 123456789 123456789 123456789 0.019 123456789 123456789 123456789 0.022 123456789 123456789 123456789 0.019 123456789 123456789 123456789 0.011 123456789 123456789 123456789 123456789 0.011 123456789 123456789 123456789 0.007 123456789 123456789 ID(Cont.) Amps PD Watts Ciss(pF) Typ EAS mJ APT Part No. 16 520 6500 2500 APT12080LVR 21 520 6600 2500 APT10050LVR 27 520 6600 2500 APT8030LVR 30 450 5600 1600 APT6020LVR 38 520 7500 2500 APT6015LVR 37 450 5600 1600 APT5014LVR 47 520 7400 2500 APT5010LVR 57 520 7410 2500 APT40M70LVR 76 520 8500 2500 APT30M40LVR 100** 520 8500 2500 APT20M22LVR 100 ** 520 8600 2500 APT10M11LVR 15 450 6500 2500 APT12080JVR 26 700 15000 3600 APT12040JVR 19 450 6600 2500 APT10050JVR 22 500 7500 1300 APT10043JVR 34 700 15000 3600 APT10025JVR 25 450 6600 2500 APT8030JVR 28 500 7700 1300 APT8028JVR 44 700 14715 3600 APT8015JVR 35 450 7500 2500 APT6015JVR 40 500 8800 1300 APT6013JVR 62 700 16500 3600 APT60M75JVR 44 450 7400 2500 APT5010JVR 50 500 9000 1300 APT50M85JVR 77 700 16800 3600 APT50M50JVR 53 450 7410 2500 APT40M70JVR 93 700 16000 3600 APT40M35JVR 70 450 8500 2500 APT30M40JVR 130 700 18000 3600 APT30M19JVR 97 450 8500 2500 APT20M22JVR 112 500 9700 1300 APT20M19JVR 175 700 18000 3600 APT20M11JVR 144 450 8600 2500 APT10M11JVR 225 700 18000 3600 APT10M07JVR 8 Package Style TO-264 *TO-264[L] S S G 27 2 T- D SO *ISOTOP®[J] (ISOLATED BASE) *Not to Scale POWER MOS V® MOSFETs 1234567890 1234567890 1234567890 1234567890 BVDSS RDS(ON) ID(Cont.) PD Ciss(pF) EAS APT 1234567890 1234567890 1234567890 Volts Ohms Amps Watts Typ mJ Part No. 12345678901234567890123456789012123456789012345678901234567890121234567890123456789 1234567890 12345678901234567890123456789012123456789012345678901234567890121234567890123456789 1234567890 12345678901234567890123456789012123456789012345678901234567890121234567890123456789 1234567890 12345678901234567890123456789012123456789012345678901234567890121234567890123456789 Any devices1234567890 offered in the TO-247 package can be made available in D3 PAK. See page 19 for details. 12345678901234567890123456789012123456789012345678901234567890121234567890123456789 1234567890 12345678901234567890123456789012123456789012345678901234567890121234567890123456789 1234567890 12345678901234567890123456789012123456789012345678901234567890121234567890123456789 1234567890 1234567890 1234567890 1000 1.000 11 280 3050 1210 APT1001RSVR 1234567890 1234567890 1234567890 1234567890 0.860 13 370 3700 1300 APT10086SVR 1234567890 1234567890 1234567890 1234567890 800 0.650 13 280 3050 1210 APT8065SVR 1234567890 1234567890 1234567890 1234567890 600 0.450 15 250 2600 960 APT6045SVR 1234567890 1234567890 1234567890 1234567890 0.350 18 280 3450 1210 APT6035SVR 1234567890 1234567890 1234567890 500 0.280 20 250 2650 960 APT5028SVR 1234567890 1234567890 1234567890 1234567890 0.200 26 300 3700 1300 APT5020SVR 1234567890 1234567890 1234567890 1234567890 0.170 30 370 4400 1300 APT5017SVR 1234567890 1234567890 1234567890 1234567890 200 0.045 56 300 4050 1300 APT20M45SVR 1234567890 1234567890 1234567890 1234567890 0.038 67 370 5100 1300 APT20M38SVR 1234567890 1234567890 1234567890 100 0.025 75 ** 300 4150 1500 APT10M25SVR 1234567890 1234567890 1234567890 1234567890 0.019 75 ** 370 5100 1500 APT10M19SVR 1234567890 1234567890 1234567890 1234567890 Package Style D3PAK *D3 PAK[S] POWER MOS V® MOSFET/FRED “COMBI” PRODUCTS POWER FACTOR CORRECTION “BOOST” CONFIGURATION 500 0.100 44 450 7410 2500 APT5010JVRU2 4 3 2 MOTOR DRIVE “BUCK” CONFIGURATION 500 0.100 44 450 7 22 1 OT S 7410 2500 APT5010JVRU3 *ISOTOP®[J] (ISOLATED BASE) “BOOST” CONFIGURATION “BUCK” CONFIGURATION • Reduced parts count vs discretes. • Improved circuit performance due to reduced inductance. ** IDmax limited by package 9 *Not to Scale Additional MOS V® Products Preliminary Information MOSFETs BVDSS Volts RDS(ON) ID (Cont) Ohms Amps 600 500 500 200 100 600 500 500 200 100 0.110 0.085 0.080 0.018 0.009 0.100 0.085 0.080 0.018 0.009 PD Ciss(pF) Watts Typ 49 56 58 100** 100** 49 56 58 100** 100** 625 625 625 625 625 625 625 625 625 625 4100 6700 6700 7600 7600 4100 6700 6700 7600 7600 EAS mJ APT Part Number 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 Samples Available APT6011B2VR APT50M85B2VR APT50M80B2VR APT20M18B2VR APT10M09B2VR APT6011LVR APT50M85LVR APT50M80LVR APT20M18LVR APT10M09LVR Sept 99 Aug 99 Aug 99 Sept 99 Sept 99 Sept 99 Aug 99 Aug 99 Sept 99 Sept 99 Package Style T-MAX™ TO-264 FREDFETs BVDSS Volts RDS(ON) Ohm ID (Cont) Amps 800 600 600 500 500 200 100 600 500 200 100 0.750 0.250 0.110 0.085 0.080 0.018 0.009 0.110 0.085 0.018 0.009 12 25 49 56 58 100** 100** 49 56 100** 100** Ciss PD (pF) Watts Typ 260 370 625 625 625 625 625 625 625 625 625 2700 4300 4100 6700 6700 7600 7600 4100 6700 7600 7600 trr (nS) Max EAS mJ 250 250 250 250 250 220 220 250 250 220 220 960 1300 3000 3000 3000 3000 3000 3000 3000 3000 3000 APT Part Number APT8075BVFR APT6025BVFR APT6011B2VFR APT50M85B2VFR APT50M80B2VFR APT20M18B2VFR APT10M09B2VFR APT6011LVFR APT50M85LVFR APT20M18LVFR APT10M09LVFR Samples Package Available Style July 99 Now Sept 99 Aug 99 Aug 99 Sept 99 Sept 99 Sept 99 Aug 99 Sept 99 Sept 99 TO-247 T-MAX™ TO-264 **ID(Cont) limited by package TO-247 TO-247[B] TO-264 T-Max T-MAX™ [B2] 10 TO-264[L] MOS V® FREDFETs Applications for FREDFETs .... Power MOS V® FREDFETs should be specified under the following conditions: FREDFET Technology .... Using a proprietary platinum lifetime control process, the performance of the intrinsic body drain diode of the Power MOS V® MOSFET is improved. • Whenever the intrinsic body drain diode of the MOSFET is expected to carry forward current. Examples are Half Bridge, H-Bridge and 3-Phase Bridge circuit topologies. Faster Intrinsic Diode Recovery .... The reverse recovery time has been reduced to 250ns maximum, eliminating the external FRED and Schottky rectifiers in certain circuit configurations. • In soft switched circuits, where the body diode carries current. Examples are Phase Shift Controlled H-Bridge or Resonant circuit topologies. Improved Ruggedness .... The ruggedness of the intrinsic diode has also been improved, allowing for a commutative dv/dt rating of 5V/ns. Other Benefits .... The platinum process provides the added advantages of soft recovery, lower leakage current, lower recovery charge and more temperature independent performance than alternative processes used to improve intrinsic diode performance. v MOSFET vs FREDFET Intrinsic Diode trr FREDFET MOSFET POWER MOS V® FREDFETs BVDSS RDS(ON) ID(Cont.) PD Ciss(pF) EAS trr(nsecs) APT Volts Ohms Amps Watts Typ mJ Max Part No. 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 Any devices offered in standard MOSFETs can be made available as FREDFETs . See page 19 for details. 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1000 800 500 300 200 100 1.100 0.860 0.650 0.560 0.240 0.200 0.170 0.085 0.070 0.045 0.038 0.025 0.019 11 13 13 16 22 26 30 40 48 56 67 75 ** 75** 280 370 280 370 280 300 370 300 370 300 370 300 370 3050 3700 3050 3700 3600 3700 4400 4100 4890 4050 5100 4300 5100 1210 1300 1210 1300 1210 1300 1300 1300 1300 1300 1300 1500 1500 11 200 200 200 200 250 250 250 200 225 200 240 200 200 APT1001R1BVFR APT10086BVFR APT8065BVFR APT8056BVFR APT5024BVFR APT5020BVFR APT5017BVFR APT30M85BVFR APT30M70BVFR APT20M45BVFR APT20M38BVFR APT10M25BVFR APT10M19BVFR Package Style TO-247 *TO-247[B] *Not to Scale POWER MOS V® FREDFETs 1234567890 1234567890 1234567890 1234567890 BVDSS RDS(ON) ID(Cont.) PD Ciss(pF) EAS trr(nsecs) APT Package 1234567890 1234567890 1234567890 Volts Ohms Amps Watts Typ mJ Max Part No. Style 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901 1234567890 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901 1234567890 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901 1234567890 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901 1234567890 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901 1234567890 Any devices offered in the TO-264 package can also be made available in T-Max™. See page 19 for details. 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901 1234567890 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901 1234567890 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901 1234567890 1234567890 T-Max 1234567890 1234567890 800 0.300 27 520 6600 2500 300 APT8030B2VFR 1234567890 1234567890 1234567890 1234567890 1234567890 1234567890 1234567890 500 0.100 47 520 7400 2500 250 APT5010B2VFR 1234567890 1234567890 1234567890 1234567890 1234567890 1234567890 *T-MAX™[B2] 1234567890 200 0.022 100 ** 520 8500 2500 220 APT20M22B2VFR 1234567890 1234567890 1234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 Any devices1234567890 offered in the TO-247 package can also be made available in D3 PAK See page 19 for details. 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1234567890 123456789012345678901234567890121234567890123456789012345678901212345678901234567890 1234567890 1234567890 D3PAK 1234567890 1234567890 1234567890 500 0.200 26 300 3700 1300 250 APT5020SVFR 1234567890 1234567890 1234567890 1234567890 1234567890 *D3 PAK[S] 200 0.045 56 300 4050 1300 200 APT20M45SVFR 1234567890 1234567890 1234567890 1234567890 1234567890 1000 0.500 21 520 6600 2500 300 APT10050LVFR 1234567890 1234567890 1234567890 1234567890 1234567890 1234567890 1234567890 800 0.300 27 520 6600 2500 300 APT8030LVFR 1234567890 1234567890 1234567890 1234567890 TO-264 1234567890 1234567890 1234567890 500 0.100 47 520 7400 2500 250 APT5010LVFR 1234567890 1234567890 1234567890 1234567890 1234567890 1234567890 1234567890 300 0.040 76 520 8500 2500 240 APT30M40LVFR 1234567890 1234567890 1234567890 1234567890 1234567890 1234567890 ** *TO-264[L] 1234567890 200 0.022 100 520 8500 2500 220 APT20M22LVFR 1234567890 1234567890 1234567890 1234567890 1234567890 1000 0.500 19 450 6600 2500 300 APT10050JVFR 1234567890 1234567890 1234567890 0.250 34 700 15000 3600 300 APT10025JVFR 1234567890 1234567890 1234567890 1234567890 1234567890 800 0.300 25 450 6600 2500 300 APT8030JVFR 1234567890 1234567890 1234567890 0.150 44 700 14715 3600 280 APT8015JVFR S 1234567890 S 1234567890 1234567890 1234567890 1234567890 27 1234567890 D -2 500 0.100 44 450 7400 2500 250 APT5010JVFR G 1234567890 T 1234567890 SO 1234567890 0.085 50 500 9000 1300 300 APT50M85JVFR 1234567890 1234567890 1234567890 0.050 77 700 16300 3600 300 APT50M50JVFR 1234567890 1234567890 1234567890 1234567890 1234567890 300 0.040 70 450 8500 2500 240 APT30M40JVFR 1234567890 1234567890 1234567890 0.019 130 700 18000 3600 300 APT30M19JVFR 1234567890 1234567890 *ISOTOP®[J] 1234567890 1234567890 (ISOLATED BASE) 1234567890 1234567890 200 0.022 97 450 8500 2500 220 APT20M22JVFR 1234567890 1234567890 1234567890 0.011 175 700 18000 3600 250 APT20M11JVFR 1234567890 ** IDmax limited by package 12 *Not to Scale POWER MOS IV® MOSFETs LOW GATE CHARGE - FAST SWITCHING FAMILY BVDSS Volts RDS(ON) Ohms ID(Cont.) Amps PD Watts Ciss(pF) Typ Qg(nC) Typ APT Part No. 1000 1.000 11.0 310 2460 90 APT1001RBN 1.100 10.5 310 2460 90 APT1001R1BN 1.600 8.0 240 1530 66 APT1001R6BN 2.000 7.0 240 1530 66 APT1002RBN 4.000 4.4 180 805 35 APT1004RBN 800 0.750 13.0 310 2410 88 APT8075BN 600 0.300 23.0 360 2905 140 APT6030BN 0.350 19.0 310 2400 87 APT6035BN 0.400 18.0 310 2400 87 APT6040BN 0.200 28.0 360 2890 140 APT5020BN 0.250 23.0 310 2380 83 APT5025BN 0.160 31.0 360 2850 130 APT4016BN 0.200 26.0 310 2380 94 APT4020BN 0.500 20.5 520 5425 235 APT10050JN 0.260 33.0 690 11610 465 APT10026JN 0.300 27.0 520 5780 245 APT8030JN 0.180 40.0 690 11715 468 APT8018JN 500 400 1000 800 Package Style TO-247 *TO-247[B] G 600 500 400 1000 0.150 38.0 520 5540 242 APT6015JN 0.090 57.0 690 11670 446 APT60M90JN 0.100 48.0 520 5570 240 APT5010JN 0.060 71.0 690 11640 475 APT50M60JN 0.075 56.0 520 5630 241 APT40M75JN 0.042 86.0 690 11140 507 APT40M42JN 4.000 3.6 125 805 35 APT1004RKN S S S *ISOTOP®[J] (ISOLATED BASE) TO-220 800 2.400 4.7 125 790 38 APT802R4KN *TO-220[K] 13 7 22 OT D *Not to Scale RF MOSFETs Why Higher Voltage .... Higher operating voltage means higher load impedances. For 300W of RF output at 50V, the load is less than 4 ohms. At 125V, the load impedance is 25 ohms. The higher impedance allows for fewer transformers and combiners. Parallel devices can still operate into a reasonable and convenient load impedance. Increasing the operating voltage also lowers the current required for any given power output, reducing the size and weight of other components. RF Technology.... APT RF MOSFETs are optimized for high power Class C, D and E operation from 1100 MHz. The die geometry has been designed for RF high power efficiency and low gate loss. The RF MOSFETs are mounted on an isolation substrate to create a TO-247 common source configuration. The source is directly connected to the center pin and heatsink tab; no external insulator is necessary. This provides maximum thermal efficiency without the added expense and assembly problems of drain isolation. Internally, symmetric wire bonding schemes insure that both pinout versions of each device are perfect mirror image pairs. This configuration allows for easy layout of push-pull and parallel pairs for circuit board symmetry and separation of input and output sections. Lower Cost .... • Inexpensive TO-247 plastic package • No insulators required • Maximum thermal efficiency. The internal BeO insulator is more efficient than external insulators. • Simplified board layout due to symmetric pairs configuration High Voltage Operation .... Historically, all RF MOSFETs operated at a maximum of 50V. By combining high voltage MOSFET technology with specific RF die geometries, this limitation has been removed. RF operation at up to 300V is now possible. Note: The ARF446 through ARF449 devices are based on the latest MOS V® RF technology and are the preferred devices for all new designs. The ARF440 through ARF445 are based on Power MOS IV® technology and are not recommended for new designs. RF MOSFETS - SYMMETRIC PAIRS VDD Volts POUT Watts GPS dB(typ) °C/W RθJC Pin Out APT Part No. 50 125 125 21 @ 13.56 MHz 21 @ 13.56 MHz 0.75 0.75 Figure 1 Figure 2 ARF440 ARF441 100 200 200 22 @ 13.56 MHz 22 @ 13.56 MHz 0.75 0.75 Figure 1 Figure 2 ARF442 ARF443 300 300 300 18.7 @ 13.56 MHz 18.7 @ 13.56 MHz 0.60 0.60 Figure 1 Figure 2 ARF444 ARF445 250 250 250 15 @ 40.68 MHz 15 @ 40.68 MHz 0.55 0.55 Figure 1 Figure 2 ARF446 ARF447 150 250 250 15 @ 40.68 MHz 15 @ 40.68 MHz 0.55 0.55 Figure 1 Figure 2 ARF448A ARF448B 150 150 150 13 @ 81.36 MHz 13 @ 81.36 MHz 0.76 0.76 Figure 1 Figure 2 ARF449A ARF449B 150 500 13 @ 81.36 MHz 0.35 Figure 1 TO-247 Gate Source Drain Figure 2 ARF450 14 TO-247 Drain Source Gate *TO-247 COMMON SOURCE *Not to Scale FRED Technology FRED Technology .... Our proprietary platinum lifetime control process results in performance advantages vs FREDs built with alternative processes for lifetime control. Use of platinum produces a “softer” and faster recovery with an optimal trade-off between VF and trr. Improved High Temperature Operation .... The reverse recovery of silicon diodes degrades as operating temperatures increase. The advantage of using platinum for lifetime control is less degradation of performance at high temperatures. To assist the designer, trr is specified on all datasheets under operating conditions; i.e., at Tj = 125°C, maximum rated current and dI/dt and 80% rated voltage. CENTER-TAP DUAL FREDS VRMM Volts IF(AV) Amps** trr2(25°C) nsec Typ 1000 15 30 60 60 trr3(100°C) VF(25°C) nsec Typ Volts 120 120 2.3 2.3 IRM(25°C) µA 250 250 APT Part No. Package Style APT15D100BCT APT30D100BCT TO -24 7 600 15 30 40 50 80 80 1.8 1.8 150 250 APT15D60BCT APT30D60BCT 400 15 30 40 45 70 70 1.5 1.5 150 250 APT15D40BCT APT30D40BCT 200 30 40 60 1.15 250 APT30D20BCT 1000 60 70 130 2.5 250 APT60D100LCT 1 2 3 *TO-247[BCT] Common Cathode TO 600 60 70 90 1.8 250 APT60D60LCT 400 60 70 90 1.5 250 APT60D40LCT 200 60 36 71 1.15 250 APT60D20LCT -26 4 *TO-264[LCT] Common Cathode TO TO -24 7 1 -24 CONSULT FACTORY FOR THESE OR OTHER PACKAGE CONFIGURATIONS 7 1 2 Common Anode **All Ratings Are Per Leg 2 Half Bridge 3or Phase Leg 3 15 *Not to Scale DISCRETE FREDS VRMM Volts 1200 1000 600 400 200 1000 IF(AV) Amps trr2(25°C) nsec Typ trr3(100°C) VF(25°C) nsec Typ Volts IRM(25°C) µA APT Part No. 30 60 30 60 15 30 60 30 60 30 60 70 70 60 70 40 50 70 45 40 40 36 160 130 120 130 80 80 90 70 65 60 71 2.5 2.5 2.3 2.5 1.8 1.8 1.8 1.5 1.5 1.15 1.15 250 250 250 250 150 250 250 250 250 250 250 APT30D120B APT60D120B APT30D100B APT60D100B APT15D60B APT30D60B APT60D60B APT30D40B APT60D40B APT30D20B APT60D20B 15 60 120 2.3 250 APT15D100K Package Style TO-247 *TO-247[B] TO -22 0 600 15 40 80 1.8 150 APT15D60K 400 15 40 70 1.5 150 APT15D40K 300 15 35 60 1.4 150 APT15D30K 1200 30 60 100 70 70 130 160 130 215 2.5 2.5 2.5 250 250 250 APT2X30D120J APT2X60D120J APT2X100D120J *TO-220[K] 2 K 2 1000 600 400 200 1200 1000 600 400 200 K2 A A2 7 el 1 22 ll K TO - ara S -P i nt A1 A 1 A 30 60 100 30 60 100 30 60 100 60 60 70 80 50 70 60 45 70 60 36 120 130 160 80 90 92 70 90 140 71 2.3 2.5 2.5 1.8 1.8 2.0 1.5 1.5 1.5 1.15 250 250 250 250 250 250 250 250 500 250 APT2X30D100J K1 APT2X60D100J APT2X100D100J APT2X30D60J *ISOTOP®[J] APT2X60D60J Antiparallel Configuration APT2X100D60J (ISOLATED BASE) APT2X30D40J APT2X60D40J APT2X100D40J APT2X60D20J 30 60 100 30 60 100 30 60 100 30 60 100 60 100 70 70 130 60 70 80 50 70 60 45 70 60 36 70 160 130 215 120 130 160 80 90 92 70 90 140 71 150 2.5 2.5 25 2.3 2.5 2.5 1.8 1.8 2.0 1.5 1.5 1.5 1.15 1.1 250 250 250 250 250 250 250 250 250 250 250 500 250 500 APT2X31D120J APT2X61D120J APT2X101D120J APT2X31D100J APT2X61D100J APT2X101D100J APT2X31D60J APT2X61D60J APT2X101D60J APT2X31D40J APT2X61D40J APT2X101D40J APT2X61D20J APT2X101D20J 16 2 K A 2 1 K2 K K1 27 l -2 le A OS T ral a P 1 A2 A1 *ISOTOP®[J] Parallel Configuration (ISOLATED BASE) *Not to Scale DISCRETE SURFACE MOUNT FREDS VRMM Volts 600 IF(AV) Amps 30 trr2(25°C) nsec Typ trr3(100°C) nsec Typ 50 80 VF(25°C) Volts 1.8 IRM(25°C) µA 250 APT Part No. Package Style APT30D60S D3PAK 400 30 45 70 1.5 250 APT30D40S 200 30 40 60 1.15 250 APT30D20S *D3 PAK[S] Higher Frequency FREDs Standard FRED[1] vs Higher Frequency FRED[2] Extremely Fast Recovery .... These FREDs are capable of replacing GaAs rectifiers in high frequency applications up to 2 MHz, at a fraction of the cost. By using two (2), much heavier platinum doped 300V FREDs in series, a considerable decrease in the reverse recovery time is achieved vs standard 600V FREDs. This heavier concentration of platinum produces a FRED that is specifically designed for higher frequency applications where reduction of switching losses is most important and a higher VF specification can be tolerated. [2] [1] ULTRAFAST SOFT RECOVERY DIODE PRODUCTS HIGHER FREQUENCY FREDS VRMM Volts 600 IF(AV) Amps 30 trr2(25°C) nsec Typ 20 trr3(100°C) VF(25°C) nsec Typ Volts 35 4.0 IRM(25°C) µA 250 APT Part No. Package Style TO APT30DS60B -24 7 15 12.5 25 4.0 150 APT15DS60B 1 2 17 *TO-247[B] *Not to Scale HERMETIC MOSFET PRODUCTS BVDSS Volts RDS(ON) Ohms ID(Cont.) Amps PD Watts Ciss(pF) Typ Qg(nC) Typ 1000 4.000 3.3 100 805 35 APT Part No. APT1004RGN Alternate Package Package Style SMD1 *TO-257[G] (ISOLATED) 1000 2.000 5.5 150 1530 66 APT1002RCN SMD2 4.000 3.6 125 805 35 APT1004RCN SMD1 600 0.450 11.8 150 2600 115 APT6045CVR SMD2 500 0.320 14.0 150 2650 110 APT5032CVR SMD2 0.400 13.0 150 1430 71 APT5040CNR SMD2 0.415 12.0 150 2410 103 2N7228/JX/JV 0.300 15.0 150 1500 71 APT4030CNR 0.315 14.0 150 2400 100 2N7227/JX/JV 0.88 11.0 250 3700 185 APT10088HVR SMD3 1.10 9.0 200 3050 150 APT1001R1HVR SMD2 0.58 13.5 250 3700 185 APT8058HVR SMD3 0.67 11.5 200 3050 150 APT8067HVR SMD2 0.27 20.0 250 4300 185 APT6027HVR SMD3 0.37 15.5 200 3450 140 APT6037HVR SMD2 0.19 24.0 250 4400 200 APT5019HVR SMD3 0.26 18.5 200 3600 140 APT5026HVR SMD2 0.14 28.0 250 4500 195 APT4014HVR SMD3 0.18 22.0 200 3350 135 APT4018HVR SMD2 0.040 45.0 250 5100 148 APT20M40HVR SMD3 400 1000 800 600 500 400 200 SMD2 *TO-254[C] (ISOLATED) *TO-258[H] (ISOLATED) CONSULT FACTORY FOR INFORMATION ON FRED, FREDFET AND IGBTS IN ANY HERMETIC PACKAGE. 18 *Not to Scale HERMETIC MOSFET PRODUCTS BVDSS Volts RDS(ON) Ohms ID(Cont.) Amps PD Watts Ciss(pF) Typ Qg(nC) Typ 1000 1.10 9.0 200 3050 150 APT1001R1AVR SMD2 800 0.65 11.5 200 3050 150 APT8065AVR SMD2 600 0.32 17.5 235 3750 160 APT6032AVR SMD3 0.35 16.0 200 3450 140 APT6035AVR SMD2 0.22 21.0 235 3700 150 APT5022AVR SMD3 0.24 18.5 200 3600 140 APT5024AVR SMD2 0.30 14.7 155 2650 110 APT5030AVR SMD2 400 0.15 25.5 235 3600 160 APT4015AVR SMD3 300 0.090 33.0 235 4100 130 APT30M90AVR SMD3 1000 0.57 17.3 450 6600 335 APT10057WVR SMD4 600 0.17 31.5 450 7500 315 APT6017WVR SMD4 500 0.12 40.0 450 7400 312 APT5012WVR SMD4 400 0.082 44.0 450 7410 330 APT40M82WVR SMD4 200 0.026 65.0** 450 8500 290 APT20M26WVR SMD4 1000 0.250 33.0 625 15000 660 APT10025PVR 600 0.075 60.5 625 16500 700 APT60M75PVR 500 0.05 74.5 625 16300 690 APT50M50PVR 400 0.035 89.0 625 16000 700 APT40M35PVR 200 0.013 146.0 625 18000 630 APT20M13PVR 500 APT Part No. Alternate Package Package Style *TO-3[A] (NON-ISOLATED) *TO-267[W] (ISOLATED) *P-PACK (ISOLATED) CONSULT FACTORY FOR INFORMATION ON FRED, FREDFET AND IGBTS IN ANY HERMETIC PACKAGE. *SMD1 *SMD2 *SMD3 *SMD4 CONSULT FACTORY FOR INFORMATION ON SURFACE MOUNT PRODUCTS ** IDmax limited by package 19 *Not to Scale Hermetic Products APT is a MIL-PRF-19500 certified supplier and can provide TX, TXV and space level processing. In addition to the MOSFETs shown in this catalog, other MOSFETs, FREDFETs, IGBTs, FREDs, or combinations of these products can be provided in hermetic packages. If you do not see the product you need, or if you have questions concerning processing capabilities or certification levels, please contact your local representative or APT directly. Custom, Value-Added Solutions To Meet Your Specific Power Application Requirements In addition to the broad line of leading edge products in this catalog, APT is dedicated to providing innovative solutions for our customers. This means working with our customers to solve their procurement, manufacturing or application problems. We are known as the supplier that provides solutions that others cannot, or will not, provide. These include, but are not limited to: • Custom products including special designs, processes, and packaging. • Supply chain management requirements. • Strategic inventories to allow for unexpected changes in demand. • Special testing. • Thermal and power management. • Hi-Rel Testing/Screening • Application Specific Power Modules (ASPM) where power semiconductors are combined with driver and protection circuits to meet your specific application requirements. For additional information contact your local APT Representative or APT directly. 20 APT USA 405 S. W. COLUMBIA STREET BEND, OR 97702 U.S.A. TEL: (541) 382-8028 or 1-800-522-0809 FAX: (541) 388-0364 http://www.advancedpower.com E-mail: [email protected] APT EUROPE PARC CADERA NORD - AV KENNEDY BAT B4 33700 MERIGNAC - FRANCE TEL: (33) (0)5 57 92 15 15 FAX: (33) (0)5 56 47 97 61 SALES OFFICES EASTERN USA TEL: (978) 686-5352 FAX: (978) 686-5441 E-mail: [email protected] EUROPE TEL: 33-557 92 15 15 FAX: 33-556 47 97 61 E-mail: [email protected] ASIA, SOUTH AMERICA, AUSTRALIA TEL: (541) 382-8028 FAX: (541) 388-0364 E-Mail: [email protected] WESTERN USA TEL: (541) 382-8028 FAX: (541) 388-0364 E-Mail: [email protected] is a registered trademark of Advanced Power Technology, Inc. © 1998 ISOTOP® is a registered trademark of SGS Thomson 21 APT reserves the right to change, without notice, the specifications and information contained herein. 055-0007 REV H