LX5530 ® TM InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The LX5530 also features an on-chip power detector at the output port of the PA to help reduce BOM cost and PCB space for implementation of power control in a typical wireless system. The power detector is integrated with a temperature-compensated bias network and provides very stable response across a wide range of output power levels, over temperature extremes from -40 to +85°C. The LX5530 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability makes the LX5530 an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN, as well as the emerging 802.16 WiMAX applications. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com BLOCK DIAGRAM Vc RF Input Vref Det 3X3MM MLP PACKAGE FCC U-NII Wireless IEEE 802.11a HiperLAN2 5GHz Cordless Phone IEEE 802.16 WiMAX PACKAGE ORDER INFO LQ Plastic MLPQ 16 pin LX5530 MSC 5530 608Y APPLICATIONS RF Output Active Bias Network Broadband 4.9 – 5.9GHz Operation Advanced InGaP HBT Single-Polarity 3 – 5V Supply Power Gain up to ~ 33dB for VC=5V, Icq = 250mA Power Gain > ~28dB across 4.95.85GHz OFDM Mask Compliance Power Pout ~ +25dBm over 4.95.85GHz (ACPR ~ -50dBc @ ±30MHz Offset) Pout up to +23dBm with EVM ~3% (VC = 5V) EVM < ~2.5% for Pout=+21dBm across 4.95.85GHz (VC = 5V) EVM < ~2.5% for Pout=+19dBm across 4.95.85GHz (VC = 4V) Total Current ~250mA for Pout = +20dBm, Duty Cycle = 99% (VC= 4V) Complete On-Chip Input Match Simple Output Match for Optimal Broadband EVM On-Chip RF Decoupling Temperature-Compensated OnChip Output Power Detector with Wide Dynamic Range Small Footprint: 3x3mm Low Profile: 0.9mm RoHS Compliant / Pb-free LX5530LQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5530LQ-TR) Copyright © 2000 Rev. 1.0a, 2006-09-12 WWW . Microsemi .C OM The LX5530 is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9 – 5.9 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3 – 5V, with high power gain of up to 33dB. When operated at 5V supply voltage, it provides up to +25dBm linear output power for 802.11a OFDM spectrum mask compliance, and low EVM of 3% for up to +23dBm output power in the 4.9-5.9GHz band. Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5530 ® TM InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT VC3 VC2 VC1 13 14 15 16 N.C. 12 1 N.C. RF OUT 11 2 RF IN RF OUT 10 e3 RF IN DET GND 9 6 5 VB2 VB1 N.C. Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. 7 VB3 8 4 VCC LQ PACKAGE WWW . Microsemi .C OM N.C. DC Supply Voltage, RF off..............................................................................................7V Collector Current ......................................................................................................700mA Total Power Dissipation..................................................................................................4W RF Input Power (With 50 Ohm Load at Output).................................................... +15dBm Maximum Junction Temperature (TJ max)................................................................ 150°C Operation Ambient Temperature .....................................................................-40 to +85°C Storage Temperature......................................................................................-65 to +150°C Package Peak Temp. for Solder Reflow (40 seconds maximum exposure) ... 260°C (+0 -5) (Top View) THERMAL DATA LQ RoHS / Pb-free 100% matte Tin Lead Finish Plastic MLPQ 16-Pin THERMAL RESISTANCE-JUNCTION TO CASE, θJC 2.2°C/W 37.7°C/W THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA Junction Temperature Calculation: TJ = TA + (PD x θJA). The θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. FUNCTIONAL PIN DESCRIPTION Name Description RF IN RF input for the power amplifier. This pin is DC-shorted to GND, but RF-matched to 50 Ohm in the frequency range of operation. VCC Supply voltage for the bias reference and control circuits. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as VC). VB1 VB2 VB3 Bias control voltage for the first stage. Bias control voltage for the second stage. Bias control voltage for the third stage. DET Detector output for the third stage PA output power. Keep this pin OPEN if the on-chip power detection function is not used. RF OUT RF output for the power amplifier. This pin is DC-blocked from the collector of the output stage. DC supply voltage for the first stage amplifier. DC supply voltage for the second stage amplifier. DC supply voltage for the third stage amplifier. GND The center metal base of the MLP package provides both DC/RF ground as well as heat sink for the power amplifier. NC These pins are unused and not connected to the device inside the package. They can be treated either as OPEN or SHORT in PCB layout. Copyright © 2000 Rev. 1.0a, 2006-09-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 PACKAGE DATA VC1 VC2 VC3 LX5530 ® TM InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET ELECTRICAL CHARACTERISTICS Symbol Conditions LX5530 Units Min Typ Max Min Typ Max Min Typ Max ` For Nominal Bias of VC = 5.0V, ICQ = 250mA, @ Room Temperature Frequency Range f 4.90 4.95 5.15 Gain S21 33 EVM @ POUT = +21dBm EVM 64QAM / 54Mbps 2.5 EVM @ POUT = 22dBm EVM 64QAM / 54Mbps 3.5 Total Current @ POUT = 22dBm IC 99% Duty Cycle 370 Quiescent Current ICQ 250 Bias Control Reference Current IREF For ICQ = 250mA 13.5 Input Return Loss S11 -10 Output Return Loss S22 -10 Reverse Isolation S12 -50 Gain Flatness ∆S21 Over 200MHz ±0.5 Second Harmonic POUT = +24dBm -40 Third Harmonic POUT = +24dBm -40 Ramp-On Time tON 10 ~ 90% 100 ` For Nominal Bias of VC = 4.0V, ICQ = 150mA, @ Room Temperature Frequency Range f 4.90 4.95 5.15 Gain S21 31 EVM @ POUT = +19dBm EVM 64QAM / 54Mbps 2.5 EVM @ POUT = +20dBm EVM 64QAM / 54Mbps 3.5 Total Current @ POUT = +20dBm IC 99% Duty Cycle 250 Quiescent Current ICQ 150 Bias Control Reference Current IREF For ICQ = 150mA 7.8 Input Return Loss S11 -10 Output Return Loss S22 -10 Reverse Isolation S12 -50 Gain Flatness ∆S21 Over 200MHz ±0.5 Second Harmonic POUT = +24dBm -40 Third Harmonic POUT = +24dBm -40 Ramp-On Time tON 10 ~ 90% 100 Note: All measured data was obtained on a 10mil thick GETEK evaluation board without heat sink. 5.15 5.25 33 2.0 2.5 360 250 13.5 -15 -10 -50 ±0.5 -35 -40 100 5.35 5.70 5.85 5.90 28 2.0 3.0 350 250 13.5 -10 -10 -40 ±1.0 -45 -45 100 GHz dB % % mA mA mA dB dB dB dB dBc dBc ns 5.15 5.25 31 2.0 2.5 240 150 7.8 -15 -10 -50 ±0.5 -40 -40 100 5.35 5.70 5.85 5.90 27 2.0 3.0 250 150 7.8 -10 -10 -40 ±1.0 -40 -40 100 GHz dB % % mA mA mA dB dB dB dB dBc dBc ns WWW . Microsemi .C OM Parameter ELECTRICALS Copyright © 2000 Rev. 1.0a, 2006-09-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5530 ® TM InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET BROADBAND EVM VS. POUT (VC = 5V) 5.15GHz 5.725GHz TOTAL CURRENT VS. POUT (VC = 5V) 4.90GHz 5.35GHz 5.25GHz 5.85GHz 380 6.0 360 5.0 Ic (mA) EVM (%) 5.25GHz 5.85GHz 400 7.0 4.0 3.0 340 320 300 280 2.0 260 1.0 240 0.0 6 8 10 12 14 16 18 20 22 EVM OVER TEMPERATURE, 4.90GHZ -40C 8 10 12 14 16 18 20 22 24 Pout (dBm) Pout (dBm) +25C 6 24 Typical EVM vs. Pout over 4.90-5.85GHz at Room Temperature (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps, 99% Duty Cycle) Typical Current vs. Pout over 4.90-5.85GHz at Room Temperature (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps, 99% Duty Cycle) EVM OVER TEMPERATURE, 5.15GHZ +85C +25C 8.0 8.0 7.0 7.0 6.0 6.0 5.0 5.0 EVM (%) EVM (%) 5.15GHz 5.725GHz 420 8.0 4.0 3.0 -40C +85C 4.0 3.0 2.0 2.0 1.0 1.0 0.0 0.0 6 8 10 12 14 16 18 20 22 6 24 8 10 12 14 16 18 20 22 24 Pout (dBm) Pout (dBm) Typical EVM vs. Pout over Temperature at 4.90GHz (Vc=5.0V, Icq=250mA at Room Temperature, 64QAM / 54Mbps) Typical EVM vs. Pout over Temperature at 5.15GHz (Vc=5.0V, Icq=250mA at Room Temperature, 64QAM / 54Mbps) EVM OVER TEMPERATURE, 5.35GHZ EVM OVER TEMPERATURE, 5.85GHZ +25C -40C +85C +25C 8.0 8.0 7.0 7.0 6.0 6.0 5.0 5.0 EVM (%) EVM (%) WWW . Microsemi .C OM 4.90GHGz 5.35GHz 4.0 3.0 3.0 2.0 1.0 1.0 6 8 10 12 14 16 18 20 22 0.0 24 Pout (dBm) 6 8 10 12 14 16 18 20 22 24 Pout (dBm) Typical EVM vs Pout over Temperature at 5.85Hz (Vc=5.0V, Icq=250mA at Room Temperature, 64QAM / 54Mbps) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 CHARTS Typical EVM vs Pout over Temperature at 5.35GHz (Vc=5.0V, Icq=250mA at Room Temperature, 64QAM / 54Mbps) Copyright © 2000 Rev. 1.0a, 2006-09-12 +85C 4.0 2.0 0.0 -40C Page 4 LX5530 ® TM InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET EVM VS. OFDM PACKET DUTY CYCLE TOTAL CURRENT VS. DUTY CYCLE 99% 26% 8.0 420 7.0 400 6.0 380 64% 26% 360 5.0 Ic (mA) EVM (%) 64% 4.0 3.0 340 320 300 2.0 280 1.0 260 240 0.0 6 8 10 12 14 16 18 20 22 6 24 8 10 12 14 16 18 20 22 24 Pout (dBm) Pout (dBm) Typical EVM vs Pout over OFDM Packet Duty Cycle at 5.25GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) Typical Total Current vs Pout over Packet Duty Cycle at 5.25GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) EVM VS. DUTY CYCLE, 4.90GHZ EVM VS. DUTY CYCLE, 5.15GHZ 64% 99% 26% 8.0 8.0 7.0 7.0 6.0 6.0 5.0 5.0 EVM (%) EVM (%) 99% 4.0 3.0 64% 26% 4.0 3.0 2.0 2.0 1.0 1.0 0.0 0.0 6 8 10 12 14 16 18 20 22 6 24 8 10 12 14 16 18 20 22 24 Pout (dBm) Pout (dBm) Typical EVM vs Pout over Packet Duty Cycle at 4.90GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) Typical EVM vs Pout over Packet Duty Cycle at 5.15GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) EVM VS. DUTY CYCLE, 5.35GHZ EVM VS. DUTY CYCLE, 5.85GHZ 99% 64% 26% 8.0 8.0 7.0 7.0 6.0 6.0 5.0 5.0 EVM (%) EVM (%) WWW . Microsemi .C OM 99% 4.0 3.0 99% 64% 26% 4.0 3.0 2.0 2.0 1.0 1.0 0.0 0.0 6 8 10 12 14 16 18 20 22 6 24 10 12 14 16 18 20 22 24 Typical EVM vs Pout over Packet Duty Cycle at 5.85GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 CHARTS Typical EVM vs Pout over Packet Duty Cycle at 5.35GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) Copyright © 2000 Rev. 1.0a, 2006-09-12 8 Pout (dBm) Pout (dBm) Page 5 LX5530 TM ® InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET OFDM SPECTRUM AT +25DBM, 4.90GHZ OFDM SPECTRUM AT +25DBM, 5.15GHZ WWW . Microsemi .C OM Typical OFDM Output Spectrum at Pout=+25dBm, 4.90GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) Typical OFDM Output Spectrum at Pout=+25dBm, 5.15GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) OFDM SPECTRUM AT +25DBM, 5.35GHZ Typical OFDM Output Spectrum at Pout=+25dBm, 5.25GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) Typical OFDM Output Spectrum at Pout=+25dBm, 5.35GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) OFDM SPECTRUM AT +25DBM, 5.725GHZ OFDM SPECTRUM AT +25DBM, 5.85GHZ Typical OFDM Output Spectrum at Pout=+25dBm, 5.725GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) Typical OFDM Output Spectrum at Pout=+25dBm, 5.85GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) CHARTS OFDM SPECTRUM AT +25DBM, 5.25GHZ Copyright © 2000 Rev. 1.0a, 2006-09-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5530 ® TM InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET BROADBAND EVM VS. POUT (VC=4V) TOTAL CURRENT VS. POUT (VC=4V) 5.25GHz 5.85GHz 4.90GHGz 5.15GHz 5.25GHz 5.35GHz 5.725GHz 5.85GHz 300 7.0 280 6.0 260 5.0 240 Ic (mA) EVM (%) 8.0 5.15GHz 5.725GHz 4.0 3.0 220 200 180 2.0 160 1.0 140 6 0.0 6 8 10 12 14 16 18 20 22 Pout (dBm) Typical EVM vs. Pout over 4.90-5.85GHz at Room Temperature (Vc=4.0V, Icq=150mA, 64QAM / 54Mbps, 99% Duty Cycle) 8 10 12 14 16 18 20 22 Pout (dBm) Typical Current vs. Pout over 4.90-5.85GHz at Room Temperature (Vc=4.0V, Icq=150mA, 64QAM / 54Mbps, 99% Duty Cycle) OFDM SPECTRUM AT +23DBM, 4.90GHZ OFDM SPECTRUM AT +23DBM, 5.15GHZ Typical OFDM Output Spectrum at Pout=+23dBm, 4.90GHz (Vc=4.0V, Icq=150mA, 64QAM / 54Mbps) Typical OFDM Output Spectrum at Pout=+23dBm, 5.15GHz (Vc=4.0V, Icq=150mA, 64QAM / 54Mbps) OFDM SPECTRUM AT +23DBM, 5.35GHZ OFDM SPECTRUM AT +23DBM, 5.85GHZ Copyright © 2000 Rev. 1.0a, 2006-09-12 CHARTS Typical OFDM Output Spectrum at Pout=+23dBm, 5.35GHz (Vc=4.0V, Icq=150mA, 64QAM / 54Mbps) Typical OFDM Output Spectrum at Pout=+23dBm, 5.85GHz (Vc=4.0V, Icq=150mA, 64QAM / 54Mbps) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 WWW . Microsemi .C OM 4.90GHGz 5.35GHz Page 7 LX5530 ® TM InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET POWER DETECTOR OUTPUT (4.90-5.85GHZ) 2.0 5.15GHz 5.725GHz DETECTOR OUTPUT VS. LOAD IMPEDANCE 10KOhm 5.25GHz 5.85GHz 100KOhm 2.0 1.8 Detector Output (V) 1.8 Detector Output (V) 47KOhm WWW . Microsemi .C OM 4.90GHGz 5.35GHz 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0.0 0.0 6 8 10 12 14 16 18 20 22 6 24 8 10 12 14 16 18 20 22 24 Pout (dBm) Pout (dBm) Typical Output Power Detector Response over 4.90-5.85GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) Power Detector Output Voltage for Different Load Impedances (Vc=5.0V, Icq=250mA, 64QAM // 54Mbps) DET OUTPUT VS. TEMPERATURE, 4.90GHZ DET OUTPUT VS. TEMPERATURE, 5.15GHZ +25C 2.0 -40C +85C +25C 1.8 +85C 1.8 1.6 Detector Output (V) Detector Output (V) -40C 2.0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 6 8 10 12 14 16 18 20 22 0.0 24 6 Pout (dBm) 8 10 12 14 16 18 20 22 24 Pout (dBm) Power Detector Response over Temperature at 4.90GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) Power Detector Response over Temperature at 5.15GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) DET OUTPUT VS. TEMPERATURE, 5.35GHZ DET OUTPUT VS. TEMPERATURE, 5.85GHZ -40C +85C 2.0 2.0 1.8 1.8 1.6 1.6 Detector Output (V) Detector Output (V) +25C 1.4 1.2 1.0 0.8 0.6 0.4 +25C -40C +85C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0.0 0.0 6 6 8 10 12 14 16 18 20 22 Pout (dBm) 10 12 14 16 18 20 22 24 Power Detector Response over Temperature at 5.85GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 CHARTS Power Detector Response over Temperature at 5.35GHz (Vc=5.0V, Icq=250mA, 64QAM / 54Mbps) Copyright © 2000 Rev. 1.0a, 2006-09-12 8 Pout (dBm) 24 Page 8 LX5530 ® TM InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET S-PARAMETERS (VC=5V,ICQ=250MA) S12 S-PARAMETERS (VC=4V,ICQ=150MA) S22 S11 40.0 40.0 30.0 30.0 S11, S21, S12, S22 (dB) S11, S21, S12, S22 (dB) S21 20.0 10.0 0.0 -10.0 -20.0 -30.0 -40.0 -50.0 -60.0 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 S21 S12 S22 WWW . Microsemi .C OM S11 20.0 10.0 0.0 -10.0 -20.0 -30.0 -40.0 -50.0 -60.0 6.0 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 Frequency (GHz) Typical Small-Signal S-Parameters over 4.5-6.0GHz (Vc=5.0V, Icq=250mA, Room Temperature) Typical Small-Signal S-Parameters over 4.5-6.0GHz (Vc=4.0V, Icq=150mA, Room Temperature) SMALL-SIGNAL GAIN VS. SUPPLY VC SMALL-SIGNAL GAIN VS. TEMPERATURE Frequency (GHz) +25C 35 +85C -40C 30 33 25 S21 (dB) [email protected] (dB) 34 32 31 20 15 10 5 30 4.00 4.25 4.50 4.75 5.00 5.25 0 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 5.50 Vc (V) Frequency (GHz) Typical Small-Signal Gain vs. Temperature (Nominal Bias: Vc=4.0V, Icq=150mA at Room Temperature) SMALL-SIGNAL GAIN VS. BIAS VREF QUIESCENT CURRENT VS. BIAS VREF 40 300 30 250 20 10 PA “OFF” Icq (mA) [email protected] (dB) Typical Small-Signal Gain vs. Supply Voltage Vc (Nominal Bias: Vc=5.0V, Icq=250mA) PA “ON” 0 -10 ΔIcq/Δvref~ 0.08mA/mV 200 150 100 50 -20 -30 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Copyright © 2000 Rev. 1.0a, 2006-09-12 2.5 3.0 3.5 4.0 4.5 5.0 5.5 CHARTS Vref (V) Typical Small-Signal Gain vs. Bias Control Voltage Vref (Nominal Bias: Vc=Vref=5.0V, Icq=250mA) 0 2.0 Vref (V) Typical Quiescent Current Icq vs. Bias Control Voltage Vref (Nominal Bias: Vc=Vref=5.0V, Icq=250mA) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 9 LX5530 ® TM InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET PACKAGE DIMENSIONS 16-Pin MLPQ 3x3 (75 x 75 mil DAP) D b D2 E E2 e K L Dim A A1 A3 b D E e D2 E2 K L MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.55 1.80 1.55 1.80 0.2 0.35 0.50 INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.061 0.071 0.061 0.071 0.008 0.012 0.020 WWW . Microsemi .C OM LQ A A1 Note: A3 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. MECHANICALS Figure – Recommended Land Pattern Copyright © 2000 Rev. 1.0a, 2006-09-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 10 LX5530 TM ® InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET NOTES WWW . Microsemi .C OM NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2000 Rev. 1.0a, 2006-09-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 11