MICROSEMI LX5506

LX5506
®
TM
InGaP HBT 4.5 – 6GHz Power Amplifier
P RODUCTION D ATA S HEET
KEY FEATURES
DESCRIPTION
For OFDM operation (64QAM,
54Mbps), the PA provides +18dBm
linear output power with a very low
EVM (Error-Vector Magnitude) of
3%, and consumes about 190mA total
DC current. At higher supply voltage
of 5V, the same device provides
+24dBm linear OFDM output power
with 5% EVM.
The LX5506 is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5506 an ideal
solution for broadband, high-gain
power amplifier requirements for IEEE
802.11a, and HiperLAN2 portable
WLAN applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
ƒ Advanced InGaP HBT
ƒ Single-Polarity 3.3V Supply
ƒ EVM ~ 3% at Pout=18dBm for
64QAM/ 54Mbps OFDM
ƒ P1dB ~ +26dBm
ƒ Power Gain ~ 23dB at
5.25GHz for Icq ~100mA
ƒ Power Gain ~ 21dB at
5.85GHz for Icq ~100mA
ƒ Total Current ~190mA at
Pout=18dBm at 5.25GHz
ƒ ACPR ~ -50dBc at 30MHz
Offset at Pout=18dBm
ƒ Complete On-Chip Input Match
ƒ Simple Output Capacitor Match
ƒ Small Footprint: 3x3mm2
ƒ Low Profile: 0.9mm
WWW . Microsemi .C OM
The LX5506 is a power amplifier
designed for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9-5.95
GHz frequency range. The PA is
implemented
as
a
three-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
complete on-chip input matching. The
device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
IC
process
(MOCVD). It operates at a single
positive voltage supply of 3.3V
(nominal), with +26dBm of P1dB and
up to 23dB power gain in the 5.15 5.85GHz frequency range with a
simple output matching capacitor pair.
APPLICATIONS
ƒ
ƒ
ƒ
ƒ
FCC U-NII Wireless
IEEE 802.11a
HiperLAN2
5GHz Cordless Phone
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LX5506
LQ
Plastic MLPQ
16-Pin
LX5506LQ
RoHS Compliant / Pb-free Transition DC: 0418
Note: Available in Tape & Reel. Append the letters “TR” to
the part number. (i.e. LX5506LQ-TR)
This device is classified as ESD Level 0 in accordance with
JESD22-A114-B, (HBM) testing. Appropriate ESD
procedures should be observed when handling this device.
Copyright © 2003
Rev. 1.2c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5506
®
TM
InGaP HBT 4.5 – 6GHz Power Amplifier
P RODUCTION D ATA S HEET
ABSOLUTE MAXIMUM RATINGS
WWW . Microsemi .C OM
VC1
VC2
VC3
N.C.
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................600mA
Total Power Dissipation....................................................................................3W
RF Input Power.........................................................................................+15dBm
Maximum Junction Temperature (TJ max) .................................................. 150°C
Operation Ambient Temperature .......................................................-40 to +85°C
Storage Temperature........................................................................-65 to +150°C
PACKAGE PIN OUT
N.C.
RF OUT
RF OUT
N.C.
Peak Package Solder Reflow Temperature (40 second max. exposure)........ 260°C (+0, -5)
13 14 15 16
12
2
10
3
9
4
8
7
6
5
N.C.
RF IN
RF IN
VCC
VB1
VB2
VB3
N.C.
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
1
*
11
* Pad is Ground
LQ PACKAGE
(Bottom View)
RoHS / Pb-free 100% Matte Tin Lead Finish
FUNCTIONAL PIN DESCRIPTION
Name
Description
RF IN
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first
stage.
VCC
Supply voltage for the bias reference and control circuits.
VB1
Bias current control voltage for the first stage.
VB2
Bias current control voltage for the second stage.
VB3
Bias current control voltage for the third stage.
RF OUT
RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor.
VC1
Power supply for the first stage amplifier.
VC2
Power supply for the second stage amplifier.
VC3
Power supply for the third stage amplifier.
GND
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
N.C.
These are unused pins and not connected to the device. They can be treated either as open pins or connected
to ground for better heat dissipation.
PACKAGE DATA
Copyright © 2003
Rev. 1.2c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5506
InGaP HBT 4.5 – 6GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
Parameter
Frequency Range
Output Power at 1dB Compression
Power Gain at Pout=18dBm
EVM at Pout=18dBm
Total Current at Pout=18dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Ramp-On Time
Condition
Symbol
Min.
f
Pout
Gp
5.15
25
21
64QAM/54Mbps
For Icq=100mA
Over 200MHz
o
-40 to +85 C
Pout = 18dBm
Pout = 18dBm
10 - 90%
Ictotal
Icq
Iref
S21
ΔS21
ΔS21
S11
S22
S12
tON
Typ.
26
23
3
190
100
2.2
22
+/-0.5
a)
b)
3 ,1
-15
-7
-40
-40
-40
100
Max.
Min.
5.35
5.7
25
19
-10
Typ.
26
21
3
200
100
2.2
20
+/-0.5
a)
b)
2 ,1
-15
-15
-40
-60
-40
100
Max.
Unit
5.85
GHz
dBm
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
ns
-10
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ELECTRICAL CHARACTERISTICS
Test conditions: Vcc = 3.3V, Vref = 2.9V, Icq = 100mA, TA = 25°C, unless otherwise specified.
Note a) Vref = 2.9V b)Vref = 3.0V
ELECTRICALS
Copyright © 2003
Rev. 1.2c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5506
InGaP HBT 4.5 – 6GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
EVM VS POUT FREQ=5.15GHZ
EVM VS POUT FREQ=5.85GHZ
7
220
9
210
6
200
260
250
EVM
Ictotal
240
8
230
7
220
6
210
5
200
5
190
4
180
4
190
3
170
3
180
2
160
2
170
1
150
1
15
16
17
18
19
20
21
15
19
20
21
EVM VS FREQUENCY
CURRENT VS FREQUENCY
160
210
EVM_Measured
EVM_Deembedded
Ictotal
205
200
Ictotal (mA)
EVM (%)
18
Pout (dBm)
Typical EVM and Total Current vs. Pout at Vc = 3.3V
(Vc = 3.3V, Icq = 100mA, 64QAM / 54Mbps)
4
3.5
3
2.5
195
190
185
2
180
1.5
175
1
5.1
17
Pout (dBm)
Typical EVM and Total Current vs. Pout at Vc = 3.3V
(Vc = 3.3V, Icq = 100mA, 64QAM / 54Mbps)
5
4.5
16
Ictotal (mA)
EVM (%)
8
230
10
EVM (%)
EVM
Ictotal
11
Ictotal (mA)
9
240
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10
5.2
5.3
5.4
5.5
5.6
5.7
5.8
170
5.1
5.9
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Frequency (GHz)
Frequency (GHz)
Typical Total Current vs. Frequency
(Vc=3.3V, Icq=100mA, Pout=18dBm, 64QAM/54Mbps)
Typical EVM vs. Frequency
(Vc =3.3V, Icq = 100mA, Pout = 18dBm, 64QAM / 54Mpbs)
Notes: All EVM data are for OFDM signal of 64QAM/54Mbps and are actual measured data without any de-embedding. Source
EVM is around 1.4 - 1.8% for the input power levels for test.
P1DB VS FREQUENCY
28
Freq=5.15GHz
Freq=5.85GHz
P1dB
P1dB (dBm)
27
26
CHARTS
ACPR (dBc) @ 30MHz Offset
ACPR VS OUTPUT POWER
-40
-41
-42
-43
-44
-45
-46
-47
-48
-49
-50
-51
-52
-53
-54
-55
25
24
23
5.1
15
16
17
18
19
20
21
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Frequency (GHz)
Pout (dBm)
Typical P1dB vs. Frequency
(Icq = 100mA for Vc = 3.3V, Icq = 110mA for Vc=4.5V)
Typical ACPR vs. Output Power
(Vc = 3.3V, Icq = 100mA, 64QAM / 54Mpbs)
Copyright © 2003
Rev. 1.2c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX5506
InGaP HBT 4.5 – 6GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
POWER SWEEP DATA 5.15GHZ
POWER SWEEP DATA 5.85GHZ
30
800
Pout
Gain
20
600
20
600
15
500
15
500
10
400
10
400
5
300
5
300
0
200
0
200
100
-28
-23
-18
-13
-8
-3
2
7
-5
-28
12
PIN (dBm)
700
Itotal
100
-23
-18
-8
-3
2
7
12
Typical Power Sweep Data at Vc = 3.3V
(VC = 3.3V, Icq = 100mA, No Heat Sink) Frequency = 5.85GHz
RECOMMENDED BIAS RESISTOR
QUIESCENT CURRENT VS VREF
180
300
R6=47
R6=180
160
250
140
120
Icq (mA)
Bias Resistor R6 (Ohm)
-13
Pin (dBm)
Typical Power Sweep Data at Vc = 3.3V
(VC = 3.3V, Icq = 100mA, No Heat Sink) Frequency = 5.15GHz
100
80
60
200
Icq/ vref ~
0.28mA/mV
150
100
40
Icq/ vref ~
0.18mA/mV
50
20
0
2.9
3
3.1
3.2
0
2.5
3.3
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
3.6
Vref (V)
Available Vref (V)
Recommended Bias Resistor for Available Vref
(Adjusted R6 value for Obtaining Nominal Icq = 10mA at Vc = 3.3V)
Quiescent Current vs. Vref
(Vc = 3.3V, Bias Resistor R6 = 47Ω & 180Ω)
S-PARAMETER DATA
SMALL SIGNAL VS SUPPLY VOLTAGE
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
24
S21 (dB) @ 5.25GHz
S21
23.5
23
22.5
CHARTS
dB(S (1,2)) dB(S (2,1))
dB(S (1,1)) dB(S (2,2))
Itotal (mA)
-5
Pout (dBm) / Gain (dB)
25
Itotal (mA)
700
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Pout
Gain
Itotal
25
Pout (dBm) / Gain (dB)
30
800
22
21.5
5.0
5.2
5.4
5.6
5.8
6.0
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4
4.1 4.2 4.3 4.4 4.5
Supply Voltage Vc (V)
Typical S-Parameter Data at Room Temperature
(Vc = 3.3V, R6 = 0Ω, Vref = 2.9V. Icq = 100mA)
Copyright © 2003
Rev. 1.2c, 2005-08-18
21
3
Frequency (GHz)
Typical Small Signal Gain vs. Supply Voltage
(R6 = 0Ω, Vref = 2.9V, Icq = 100mA for Vc = 3.3V, Freq = 5.25GHz)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
LX5506
InGaP HBT 4.5 – 6GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
SMALL SIGNAL VS BIAS REF.
SMALL SIGNAL GAIN OVER TEMP
23
25
22
20
S21 (dB)
S21 (dB) @ 5.25GHz
WWW . Microsemi .C OM
24
30
15
10
21
20
+25
0
+85
-20
-40
19
18
PA OFF
PA ON
17
5
C
C
C
C
C
16
0
2.4
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
Vref (V)
Typical Small Signal Gain vs. Bias Reference Voltage
(Vc = 3.3V, R6 = 47Ω, Vref = 3.0V, Icq = 100mA, Freq = 5.25GHz)
5.15
3.6
5.25
5.35
5.45
5.55
5.65
5.75
5.85
Frequency (GHz)
Typical Small Signal Gain Variation Over Temperature
(Vc = 3.3V, R6 = 0Ω, Vref = 2.9V, Icq = 100mA at Room Temperature)
CHARTS
Copyright © 2003
Rev. 1.2c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
LX5506
TM
®
InGaP HBT 4.5 – 6GHz Power Amplifier
P RODUCTION D ATA S HEET
WWW . Microsemi .C OM
APPLICATION NOTE
Recommended BOM
Value
0.5/0.5pF (0402)
220pF (0402)
1µF (0603)
10µF (0805)
1nF (0402)
100/604/909Ω (0402)
10/10Ω (0402)
0 Ω (For Vref=2.9V,
Adjustable for Different Vref)
Substrate
10mil GETEK
Location
C1/C2
C3
C4=C6
C5=C8
C7
R1/R2/R3
R4/R5
R6
ε r = 3.9, tan δ = 0.02
Notes:
1) C1/C2 position should be ~30mil from MLP package
edge connected with 50 Ohm microstrip.
2) All other component positions are not critical.
3) R6 should be adjusted to maintain nominal Icq for
different available Vref values (see R6-Vref plot).
4) For Vref<2.9V operation please contact technical
support for BOM modification.
5) C6 can be eliminated when VC/VCC pins are tied
together in multiplayer board layout.
6) C7 ensures ~100ns switching time for PA on/off.
7) For PA switching speed test C8 should be moved to
input side of the switch.
Note: For higher output power
applications VC can be increased up
to 5V with +/-10% tolerance. Contact
Microsemi for details on application
circuit schematic and BOM.
APPLICATIONS
Copyright © 2003
Rev. 1.2c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7
LX5506
InGaP HBT 4.5 – 6GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
LQ
WWW . Microsemi .C OM
PACKAGE DIMENSIONS
16-Pin MLPQ 3x3 (75 x 75 mil DAP)
D
Dim
b
A
A1
A3
b
D
E
e
D2
E2
K
L
D2
E
E2
e
K
L
MILLIMETERS
MIN
MAX
0.80
1.00
0
0.05
0.20 REF
0.18
0.30
3.00 BSC
3.00 BSC
0.50 BSC
1.55
1.80
1.55
1.80
0.2
0.35
0.50
INCHES
MIN
MAX
0.031
0.039
0
0.002
0.008 REF
0.007
0.012
0.118 BSC
0.118 BSC
0.020 BSC
0.061
0.071
0.061
0.071
0.008
0.012
0.020
A
A1
A3
Note:
1. Dimensions do not include mold flash or protrusions; these shall
not exceed 0.155mm(.006”) on any side. Lead dimension shall
not include solder coverage.
MECHANICALS
Copyright © 2003
Rev. 1.2c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 8
LX5506
®
TM
InGaP HBT 4.5 – 6GHz Power Amplifier
P RODUCTION D ATA S HEET
WWW . Microsemi .C OM
TAPE AND REEL
Tape And Reel Specification
Ø 1.50mm
4.00mm
Top View
1.75mm
3.30mm
5.5 ± 0.05mm
12.00 ± 0.3mm
3.30mm
8.00mm
Ø 1.50mm
Part Orientation
1.10mm
Side View
0.30mm
2.2mm
Ø 13mm +1.5 -0.2
10.6mm
Ø 330mm ±0.5
Ø 97mm ±1.0
MECHANICALS
13mm +1.5
Copyright © 2003
Rev. 1.2c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 9
LX5506
TM
®
InGaP HBT 4.5 – 6GHz Power Amplifier
P RODUCTION D ATA S HEET
WWW . Microsemi .C OM
NOTES
NOTES
PRODUCTION DATA – Information contained in this document is proprietary to
Microsemi and is current as of publication date. This document may not be modified in
any way without the express written consent of Microsemi. Product processing does not
necessarily include testing of all parameters. Microsemi reserves the right to change the
configuration and performance of the product and to discontinue product at any time.
Copyright © 2003
Rev. 1.2c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 10