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MXP1144P
PHOTOVOLTAIC BY-PASS DIODE
50 VOLTS, 1.0 Amps
SANTA ANA DIVISION
P RODUCT P REVIEW
KEY FEATURES
DESCRIPTION
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
ƒ Oxide passivated structure for
very low leakage currents
ƒ Epitaxial structure minimizes
forward voltage drop
ƒ Triangular shape to fit in corner
near flat of photovoltaic cell
ƒ Forward voltage decreases with
radiation exposure
ƒ Targeted for terrestrial
applications with silicon
photovoltaic cells
ƒ Thin construction for fit with
photovoltaic cells
WWW . Microsemi .C OM
Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications.
The device is rated for 1A for applications where the device
will be exposed to substantial radiation flux (space). For
other applications, it may be operated at higher currents. A
version with attached leads is available.
APPLICATIONS/BENEFITS
ƒ Increases efficiency of
photovoltaic arrays
ƒ Protects photovoltaic cells from
reverse voltage
ƒ
MAXIMUM RATINGS @ 25°C (UNLESS OTHERWISE SPECIFIED)
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤ 135°C
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRWM
VR
IF(ave)
Tj
Tstg
MAX.
50
50
50
1.0
-65 to +150
-65 to +200
UNIT
Volts
Volts
Volts
Amps
°C
°C
ELECTRICAL PARAMETERS
SYMBOL
CONDITIONS
IR25
IR25
VF1
VF2
Cj1
BVR
VR= 4 Vdc, Ta= 25°C
VR= 50 Vdc, Ta= 25°C
IF= 400 mA, Ta= 25°C
IF= 1.0 A, Ta= 25°C
VR= 4 Vdc
IR= 200 µA, Ta= 25°C
Forward Voltage
pulse test, pw= 300 µs
Junction Capacitance
Breakdown Voltage
Copyright © 2002
MXP1144.PDF, 2003-08-15
MIN
TYP.
50
10
20
750
770
1050
60
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
MAX
UNIT
200
775
800
1300
nA
nA
mV
mV
pF
V
Page 1
MXP1144P
DESCRIPTION
Reverse (Leakage)
Current (in dark)
MXP1144P
PHOTOVOLTAIC BY-PASS DIODE
50 VOLTS, 1.0 Amps
SANTA ANA DIVISION
P RODUCT P REVIEW
WWW . Microsemi .C OM
Mechanical Outline
L
315.0
289.0
R = 4.0, 6 PL.
metal
(cathode)
26.0
0
0
26.0
289.0
26.0
315.0
MXP1144P
MECHANICALS
all dimensions in mils
Standard die thickness is 5.0 +/- 0.5 mils
Copyright © 2002
MXP1144.PDF, 2003-08-15
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
MXP1144P
SANTA ANA DIVISION
PHOTOVOLTAIC BY-PASS DIODE
50 VOLTS, 1.0 Amps
P RODUCT P REVIEW
Typical location with 100mm diameter photovoltaic cell
WWW . Microsemi .C OM
diode location
MECHANICALS
Copyright © 2002
MXP1144.PDF, 2003-08-15
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 3
MXP1144P
SANTA ANA DIVISION
PHOTOVOLTAIC BY-PASS DIODE
50 VOLTS, 1.0 Amps
P RODUCT P REVIEW
NOTES
WWW . Microsemi .C OM
NOTES
Copyright © 2002
MXP1144.PDF, 2003-08-15
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 4