MXP2001 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES DESCRIPTION Oxide passivated structure for very low leakage currents Epitaxial structure minimizes forward voltage drop Forward voltage decreases with radiation exposure Qualified for space applications Thin construction for fit with photovoltaic cells Rectangular shape APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com W W W. Microsemi .COM Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device will be exposed to substantial radiation flux (space). For other applications, it may be operated at higher currents. A version with attached leads is available. Increases efficiency of photovoltaic arrays Protects photovoltaic cells from reverse voltage MAXIMUM RATINGS @ 25°C (UNLESS OTHERWISE SPECIFIED) Description Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 135°C Junction Temperature Range Storage Temperature Range Symbol Max. Unit VRRM VRWM VR IF(ave) Tj Tstg 50 50 50 1.0 -65 to +150 -65 to +200 Volts Volts Volts Amps °C °C ELECTRICAL PARAMETERS Description Reverse (Leakage) Current (in dark) Forward Voltage Copyright 2002 MXP2001.PDF, 2002-05-03 Conditions IR25 Min Typ. Max Unit VR= 2.5 Vdc, Ta= 25°C 10 200 nA IR25 VR= 10 Vdc, Ta= 25°C 10 500 nA VF1 VF2 Cj1 BVR IF= 0. 5 A, Ta= 25°C IF= 1. 0 A, Ta= 25°C VR= 4 Vdc 770 790 800 90 800 820 1000 mV mV pF V IR= 200 µA, Ta= 25°C 50 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 1 MXP2001 pulse test, pw= 300 µs Junction Capacitance Breakdown Voltage Symbol MXP2001 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW W W W. Microsemi .COM Mechanical Outline MXP2001 dimensions in mils GLASS TOP METAL (ANODE) ANODE P+ NN+ 5.0 CATHODE Typical forward voltage vs. forward current MXP2001 Vf vs. If 0.88 0.87 0.86 0.85 0.83 0.82 0.81 0.80 0.79 GRAPH 0.78 0.77 0.76 0.75 0.74 0.0 5.0 10.0 15.0 20.0 25.0 30.0 If (amperes) Copyright 2002 MXP2001.PDF, 2002-05-03 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 2 MECHANICALS/ Vf (volts) 0.84 MXP2001 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW W W W. Microsemi .COM Typical forward voltage vs. temperature MXP2001 0.5A Vf vs. deg C 800 0.5A Vf (mV) 750 700 650 600 550 500 0 20 40 60 80 100 120 140 160 180 200 deg C Typical capacitance vs. reverse voltage MXP2001 capacitance vs. reverse voltage 1800 capacitance (pF) 1600 1400 1200 1000 800 600 GRAPHS 400 200 0 5 10 15 20 25 30 35 40 45 50 Vr (V) Copyright 2002 MXP2001.PDF, 2002-05-03 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 3 MXP2001 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW NOTES W W W. Microsemi .COM NOTES Copyright 2002 MXP2001.PDF, 2002-05-03 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 4