MXP1125 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES DESCRIPTION Oxide passivated structure for very low leakage currents Epitaxial structure minimizes forward voltage drop Anode and cathode contacts on same side Forward voltage decreases with radiation exposure Qualified for space applications Thin construction for fit with photovoltaic cells W W W. Microsemi .COM Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device will be exposed to substantial radiation flux (space). For other applications, it may be operated at higher currents. A version with attached leads is available. APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Increases efficiency of photovoltaic arrays Protects photovoltaic cells from reverse voltage MAXIMUM RATINGS @ 25°C (UNLESS OTHERWISE SPECIFIED) Description Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 135°C Junction Temperature Range Storage Temperature Range Symbol Max. Unit VRRM VRWM VR IF(ave) Tj Tstg 50 50 50 1.0 -65 to +150 -65 to +200 Volts Volts Volts Amps °C °C ELECTRICAL PARAMETERS Description Reverse (Leakage) Current (in dark) Copyright 2002 MXP1125.PDF, 2002-05-01 Conditions IR25 IR25 VF1 VF2 Cj1 BVR VR= 4 Vdc, Ta= 25°C VR= 50 Vdc, Ta= 25°C IF= 1 A, Ta= 25°C IF= 3.5 A, Ta= 25°C VR= 4 Vdc IR= 200 µA, Ta= 25°C Min Typ. 50 5 20 850 940 600 90 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Max Unit 200 1000 1000 1000 nA nA mV mV pF V Page 1 MXP1125 Forward Voltage pulse test, pw= 300 µs Junction Capacitance Breakdown Voltage Symbol MXP1125 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW W W W. Microsemi .COM Mechanical Outline MXP1125 physical dimensions 120 93 anode cathode mils = 0.001 inches R = 5.0, 8 pl. 29 0 0 24 88 159 233 250 mils = 0.001 inches vertical dimensions in micrometers 132 130 125 electronic glass silver metallization 5 Copyright 2002 MXP1125.PDF, 2002-05-01 MECHANICALS 0 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 2 MXP1125 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW W W W. Microsemi .COM MXP1125 typical forward characteristic 1.E+01 3 4 2 1.E+00 1 If (amperes) 0.5 1.E- 01 0.1 1.E- 02 0.01 1.E- 03 . 0.001 0.0005 1.E- 04 0.40 0.0001 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 Vf (volts) MXP1125 typical capacitance vs. voltage characteristic 1000 pF 800 600 GRAPHS 400 0 Copyright 2002 MXP1125.PDF, 2002-05-01 10 20 30 40 Vr (volts) 50 60 70 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 80 Page 3 MXP1125 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW W W W. Microsemi .COM NOTES NOTES Copyright 2002 MXP1125.PDF, 2002-05-01 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 4