V6211615 VID

REVISIONS
LTR
DESCRIPTION
DATE
Prepared in accordance with ASME Y14.24
APPROVED
Vendor item drawing
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PMIC N/A
PREPARED BY
RAJESH PITHADIA
Original date of drawing
YY-MM-DD
CHECKED BY
RAJESH PITHADIA
11-09-20
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DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
TITLE
MICROCIRCUIT, LINEAR, VOLTAGE
REFERENCE, MONOLITHIC SILICON
APPROVED BY
CHARLES F. SAFFLE
SIZE
AMSC N/A
3
CODE IDENT. NO.
DWG NO.
V62/11615
16236
PAGE
1
OF
9
5962-V090-11
1. SCOPE
1.1 Scope. This drawing documents the general requirements of a precision, micropower, shunt , voltage reference, with an
operating temperature range of -55°C to +125°C.
1.2 Vendor Item Drawing Administrative Control Number. The manufacturers PIN is the item of identification. The vendor item
drawing establishes an administrative control number for identifying the item on the engineering documentation:
V62/11615
-
Drawing
number
01
X
B
Device type
(See 1.2.1)
Case outline
(See 1.2.2)
Lead finish
(See 1.2.3)
1.2.1 Device type(s).
Device type
Generic
01
LM4040-EP
Circuit function
Precision, micropower, shunt, voltage reference
1.2.2 Case outline(s). The case outline(s) are as specified herein.
Outline letter
Number of pins
X
3
JEDEC PUB 95
Package style
TO-236-AB
Plastic small outline
1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacture:
Finish designator
A
B
C
D
E
Z
DLA LAND AND MARITIME
COLUMBUS, OHIO
Material
Hot solder dip
Tin-lead plate
Gold plate
Palladium
Gold flash palladium
Other
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CODE IDENT NO.
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1.3 Absolute maximum ratings.
1/
Continuous cathode current (IZ) .................................................................................
Storage temperature range (TSTG) ..............................................................................
Operating virtual junction temperature (TJ) ................................................................
Thermal resistance, junction-to- ambient (θJA) 2/ ......................................................
Thermal resistance, junction-to- case (θJC) ...............................................................
Thermal resistance, junction-to- board (θJA) 3/ .........................................................
Junction-to-top characterization parameter (ΨJT) 4/..................................................
Junction-to-board characterization parameter (ΨJB) 5/ ............................................
-10 mA min to 25 mA max
-65°C to +150°C
+150°C
320.8°C/W
98.2°C/W
53.3°C/W
3.3°C/W
51.8°C/W
1.4 Recommended operating conditions. 6/
Cathode current (IZ) .................................................................................................. 15 mA max
Operating free-air temperature range (TA) .................................................................. -55°C to +125°C
1/
Stresses beyond those listed under “absolute maximum rating” may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those indicated under
“recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability.
2/
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC standard, high-K
board, as specified in JESD51-7, in an environment described in JESD51-2a.
3/
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the
printed circuit board (PCB) temperature, as described in JESD51-8.
4/
The junction-to-top characterization parameter, ΨJT, estimates the junction temperature of a device in a real system and is
extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
5/
6/
The junction-to-top characterization parameter, ΨJB, estimates the junction temperature of a device in a real system and is
extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
Use of this product beyond the manufacturers design rules or stated parameters is done at the user’s risk. The manufacturer
and/or distributor maintain no responsibility or liability for product used beyond the stated limits.
DLA LAND AND MARITIME
COLUMBUS, OHIO
SIZE
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2. APPLICABLE DOCUMENTS
JEDEC PUB 95
–
Registered and Standard Outlines for Semiconductor Devices
JESD51-2A
-
Integrated Circuits Thermal Test Method Environmental Conditions – Natural Convection (Still Air)
JESD51-7
-
High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
JESD51-8
-
Integrated Circuit Thermal Test Method Environmental Conditions – Junction-to-Board
(Applications for copies should be addressed to the JEDEC Office, 3103 North 10th Street, Suite 240-S, Arlington, VA 22201-2107
or online at http://www.jedec.org)
3. REQUIREMENTS
3.1 Marking. Parts shall be permanently and legibly marked with the manufacturer’s part number as shown in 6.3 herein and as
follows:
A.
B.
C.
Manufacturer’s name, CAGE code, or logo
Pin 1 identifier
ESDS identification (optional)
3.2 Unit container. The unit container shall be marked with the manufacturer’s part number and with items A and C (if applicable)
above.
3.3 Electrical characteristics. The maximum and recommended operating conditions and electrical performance characteristics are
as specified in 1.3, 1.4, and table I herein.
3.4 Design, construction, and physical dimension. The design, construction, and physical dimensions are as specified herein.
3.5 Diagrams.
3.5.1 Case outline. The case outline shall be as shown in 1.2.2 and figure 1.
3.5.2 Terminal connections. The terminal connections shall be as shown in figure 2.
DLA LAND AND MARITIME
COLUMBUS, OHIO
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TABLE I. Electrical performance characteristics. 1/
Test
Symbol
Conditions
Temperature,
TA
Device
type
Limits
Min
Reverse breakdown
voltage
VZ
Reverse breakdown
voltage tolerance
ΔVZ
Minimum cathode
current
IZ = 100 μA
IZ = 100 μA
+25°C
01
+25°C
01
+25°C
01
αVZ
IZ = 10 mA
25°C
IZ = 1 mA
25°C
01
Reverse breakdown
voltage change with
cathode current
change
ΔVZ/ΔIZ
25°C
1 mA < IZ < 15 mA
-16
mV
μA
75
±20 typical
ppm/°C
±100
25°C
IZ, min < IZ < 1 mA
V
±15 typical
-55°C to +125°C
IZ = 100 μA
2.5 typical
80
-55°C to +125°C
Average temperature
coefficient of reverse
breakdown voltage
Max
-42
-55°C to +125°C
IZ, min
Unit
01
±15 typical
0.8
-55°C to +125°C
1
25°C
6
-55°C to +125°C
8
mV
Ω
Reverse dynamic
impedance
ZZ
IZ = 1 mA, f = 120 Hz, IAC = 0.1IZ
25°C
01
0.3 typical
Wideband noise
eN
IZ = 100 μA, 10 Hz ≤ f ≤ 10 kHz
25°C
01
35 typical
01
120 typical
μVRMS
01
0.08 typical
%
Long term stability of
reverse breakdown
voltage
Thermal hysteresis 2/
VHYST
t = 1000 h, IZ = 100 μA,
TA = 25°C ± 0.1°C
Δ TA
= -55°C to +125°C
ppm
1/
Testing and other quality control techniques are used to the extent deemed necessary to assure product performance over
the specified temperature range. Product may not necessarily be tested across the full temperature range and all parameters
may not necessarily be tested. In the absence of specific parametric testing, product performance is assured by characterization
and/or design.
2/
Thermal hysteresis is defined as VZ,25°C (after cycling to -55°C) – VZ,25°C (after cycling to 125°C).
DLA LAND AND MARITIME
COLUMBUS, OHIO
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Case X
FIGURE 1. Case outline.
DLA LAND AND MARITIME
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Case X – continued.
Dimensions
Millimeters
Symbol
Min
Max
A
0.89
1.12
A1
0.88
1.02
A2
0.01
0.10
b
0.30
0.50
c
0.08
0.20
D
2.80
3.04
E
1.20
1.40
E1
2.10
2.64
e
0.95 BSC
e1
1.90 BSC
L
L1
0.20
0.60
0.25 BSC
NOTES:
1. Controlling dimensions are millimeters.
2. Body dimensions are exclusive of mold flash and protrusion. Mold flash and protrusion not to exceed 0.25 per side.
3. Falls within reference to JEDEC TO-236-AB.
FIGURE 1. Case outline - Continued.
DLA LAND AND MARITIME
COLUMBUS, OHIO
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Device type
01
Case outline
X
Terminal number
Terminal
symbol
1
CATHODE
2
ANODE
3
SEE NOTE 1
NOTE:
1. Pin 3 is attached to substrate and must be
connected to ANODE or left open.
FIGURE 2. Terminal connections.
DLA LAND AND MARITIME
COLUMBUS, OHIO
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A
CODE IDENT NO.
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4. VERIFICATION
4.1 Product assurance requirements. The manufacturer is responsible for performing all inspection and test requirements as
indicated in their internal documentation. Such procedures should include proper handling of electrostatic sensitive devices,
classification, packaging, and labeling of moisture sensitive devices, as applicable.
5. PREPARATION FOR DELIVERY
5.1 Packaging. Preservation, packaging, labeling, and marking shall be in accordance with the manufacturer’s standard commercial
practices for electrostatic discharge sensitive devices.
6. NOTES
6.1 ESDS. Devices are electrostatic discharge sensitive and are classified as ESDS class 1 minimum.
6.2 Configuration control. The data contained herein is based on the salient characteristics of the device manufacturer’s data book.
The device manufacturer reserves the right to make changes without notice. This drawing will be modified as changes are provided.
6.3 Suggested source(s) of supply. Identification of the suggested source(s) of supply herein is not to be construed as a guarantee
of present or continued availability as a source of supply for the item.
Vendor item drawing
administrative control
number 1/
Device
manufacturer
CAGE code
Vendor part number
Top side marking 2/
V62/11615-01XB
01295
LM4040C25MDBZTEP
SAGU
1/ The vendor item drawing establishes an administrative control number
for identifying the item on the engineering documentation.
2/ The actual top side marking has one additional character that designates the wafer fab/assembly
site.
CAGE code
01295
DLA LAND AND MARITIME
COLUMBUS, OHIO
Source of supply
Texas Instruments, Inc.
Semiconductor Group
8505 Forest Lane
P.O. Box 660199
Dallas, TX 75243
Point of contact:
U.S. Highway 75 South
P.O. Box 84, M/S 853
Sherman, TX 75090-9493
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