RH1009 2.5V Reference U W W W U DESCRIPTIO ABSOLUTE The RH1009 is a general purpose 2.5V shunt regulator diode designed to operate over a wide current range while maintaining good stability with time and temperature. The adjust terminal allows either temperature coefficient to be minimized or the reference voltage to be adjusted without changing the temperature coefficient. Because it operates as a shunt regulator it can be used equally well as a positive or negative reference. Reverse Breakdown Current ................................ 20mA Forward Current .................................................. 10mA Operating Temperature Range ............. – 55°C to 125°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C AXI U RATI GS , LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringent military applications. W U U U U BUR -I CIRCUIT PACKAGE/ORDER I FOR ATIO BOTTOM VIEW 20V + 2k – ADJ NC H PACKAGE 3-LEAD TO-46 METAL CAN RH1009 BI TOP VIEW NC 1 10 NC NC 2 9 NC NC 3 8 V+ V– 4 7 ADJ NC 5 6 NC W PACKAGE 10-LEAD CERPAC TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VZ IR = 1mA ΔVZ ΔIR rZ ΔVZ ΔVZ ΔTime Reverse Breakdown Voltage Reverse Breakdown Voltage Change with Current Reverse Dynamic Impedance Temperature Stability Long Term Stability NOTES MIN (Preirradiation) TJ = 25°C TYP MAX 2.495 400μA ≤ IR ≤ 10mA IR = 1mA 1 SUB- – 55°C ≤ TJ ≤ 125°C SUBGROUP MIN TYP MAX GROUP 2.505 1 6 1 0.6 1 TA = 25°C ±0.1°C, IR = 1mA 20 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. UNITS V 10 2,3 mV 1 Ω 15 mV ppm/kHr 1 RH1009 TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER 10KRAD(Si) NOTES MIN MAX CONDITIONS VZ Reverse Breakdown Voltage IR = 1mA 2.495 ΔVZ ΔIZ Reverse Breakdown Voltage 400μA ≤ IR ≤ 10mA Change with Current rZ Reverse Dynamic Impedance IR = 1mA 1 20KRAD(Si) MIN MAX 2.505 2.495 50KRAD(Si) MIN MAX 2.505 2.495 100KRAD(Si) MIN MAX 2.505 2.495 200KRAD(Si) MIN MAX 2.505 2.495 2.505 UNITS V 6 6 8 10 12 mV 0.6 0.6 0.8 1.0 1.4 Ω Note 1: Guaranteed by design, characterization or correlation to other tested parameters. TOTAL DOSE BIAS CIRCUIT (Postirradiation) (Note 2) Note 2: TA = 25°C unless otherwise noted. 15V 12.4k RH1009 TDBC U W TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3 Group A Test Requirements (Method 5005) 1,2,3 Group C and D End Point Electrical Parameters (Method 5005) 1 * PDA Applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burnin in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. U W TYPICAL PERFORMANCE CHARACTERISTICS Reverse Breakdown Voltage Change with Current Reverse Breakdown Voltage 0 600μA ≤ IR ≤ 10mA IR = 1mA REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) REVERSE BREAKDOWN VOLTAGE (V) 2.502 2.501 2.500 2.499 2.498 –2 –4 –6 –8 –10 –12 –14 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1009 G01 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1009 G02 I.D. No. 66-10-0174 Rev. C 0607 2 Linear Technology Corporation LT 0607 REV C • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 1990