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APT26M100JCU2
ISOTOP® Boost chopper
MOSFET + SiC chopper diode
Power module
VDSS = 1000V
RDSon = 330m typ @ Tj = 25°C
ID = 26A @ Tc = 25°C
Application
 AC and DC motor control
 Switched Mode Power Supplies
 Power Factor Correction
 Brake switch
K
D
Features

G
S
G
 SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
K
S
Power MOS 8™ MOSFET
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated



D
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
 Outstanding performance at high frequency
operation
 Stable temperature behavior
 Very rugged
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive TC of VCEsat
 RoHS Compliant
ISOTOP
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
1000
26
20
140
±30
396
543
18
Unit
V
A
V
m
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-6
APT26M100JCU2 – Rev 1 October , 2012
Symbol
VDSS
APT26M100JCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Tj = 25°C
VDS =1000V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 18A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Min
3
Typ
330
4
Max
100
500
396
5
±100
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 18A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Min
Turn-off Delay Time
Fall Time
pF
305
nC
55
145
44
Resistive switching @ 25°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 2.2
Rise Time
Typ
7868
825
104
40
ns
150
38
SiC chopper diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
Maximum Reverse Leakage Current
Test Conditions
VR=1200V
DC Forward Current
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
32
56
10
1.6
2.3
200
1000
VF
Diode Forward Voltage
IF = 10A
QC
Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/µs
80
C
Total Capacitance
f = 1MHz, VR = 200V
96
f = 1MHz, VR = 400V
69
Unit
V
µA
A
1.8
3
V
nC
pF
Symbol Characteristic
Min
RthJC
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
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Typ
Mosfet
SiC Diode
2500
-40
Max
0.23
1.65
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
2-6
APT26M100JCU2 – Rev 1 October , 2012
Thermal and package characteristics
APT26M100JCU2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
Drain
Cathode
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Source
Gate
Dimensions in Millimeters and (Inches)
Typical Mosfet Performance Curve
0.9
0.2
0.7
0.15
0.1
0.5
0.3
0.05
0.1
Single P ulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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3-6
APT26M100JCU2 – Rev 1 October , 2012
Thermal Impedance (°C/W)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
0.25
APT26M100JCU2
Low Voltage Output Characteristics
Low Voltage Output Characteristics
40
VGS=10V
50
40
TJ=125°C
30
TJ=125°C
35
TJ=25°C
ID, Drain Current (A)
20
10
30
VGS=6, 7, 8 &9V
25
20
5V
15
10
4.5V
5
0
0
0
5
10
15
20
0
5
VDS, Drain to Source Voltage (V)
25
30
40
VGS=10V
ID=18A
ID, Drain Current (A)
RDSon, Drain to Source ON resistance
20
Transfert Characteristics
Normalized RDSon vs. Temperature
2
1.5
1
0.5
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
30
TJ=125°C
20
TJ=25°C
10
0
25
50
75
100
125
150
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
TJ, Junction Temperature (°C)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
100000
12
VDS=200V
ID=18A
TJ=25°C
10
VDS=500V
8
6
VDS=800V
4
2
C, Capacitance (pF)
VGS, Gate to Source Voltage
15
VDS, Drain to Source Voltage (V)
3
2.5
10
Ciss
10000
1000
Coss
100
Crss
10
1
0
0
40
80
120 160 200 240 280 320
0
50
100
150
200
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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4-6
APT26M100JCU2 – Rev 1 October , 2012
ID, Drain Current (A)
60
APT26M100JCU2
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.8
0.9
1.6
1.4
0.7
1.2
1
0.5
0.8
0.3
0.6
0.4
0.1
0.2
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
20
100
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
16
TJ=75°C
12
TJ=125°C
8
4
TJ=175°C
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
75
50
TJ=75°C
TJ=125°C
25
TJ=175°C
0
400
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
700
600
500
400
300
200
100
0
10
100
VR Reverse Voltage
1000
ISOTOP® is a registered trademark of ST Microelectronics NV
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5-6
APT26M100JCU2 – Rev 1 October , 2012
1
APT26M100JCU2
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
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Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
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application in which the failure of the Seller's Product could create a situation where personal injury, death or property
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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APT26M100JCU2 – Rev 1 October , 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.