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APTM120DA30CT1G
VDSS = 1200V
RDSon = 300m typ @ Tj = 25°C
ID = 31A @ Tc = 25°C
Boost chopper
MOSFET + SiC chopper diode
Power Module
Application
5
6
11



CR1
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
3
4
Q2

NTC
9
10
1
2
Power MOS 8™ MOSFET
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
 SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
12



Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Pins 1/2 ; 3/4 ; 5/6 must be shorted together






Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
1200
31
23
195
±30
360
657
25
Unit
V
A
V
m
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTM120DA30CT1G – Rev1 October, 2012
Symbol
VDSS
APTM120DA30CT1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Tj = 25°C
VDS =1200V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 25A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Min
3
Typ
300
4
Max
100
500
360
5
±100
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 25A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Min
Typ
14560
1340
172
pF
560
nC
90
265
100
Resistive switching @ 25°C
VGS = 15V
VBus = 800V
ID = 25A
RG = 2.2
60
ns
315
90
SiC chopper diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
Test Conditions
VR=1200V
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
64
112
20
1.6
2.3
400
2000
IF
DC Forward Current
VF
Diode Forward Voltage
IF = 20A
QC
Total Capacitive Charge
IF = 20A, VR = 600V
di/dt =1000A/µs
80
C
Total Capacitance
f = 1MHz, VR = 200V
192
f = 1MHz, VR = 400V
138
Unit
V
µA
A
1.8
3
V
nC
pF
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Transistor
SiC Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
www.microsemi.com
M4
4000
-40
-40
-40
2
Typ
Max
0.19
1
Unit
°C/W
V
150
125
100
3
80
°C
N.m
g
2–6
APTM120DA30CT1G – Rev1 October, 2012
Thermal and package characteristics
Symbol Characteristic
APTM120DA30CT1G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT 
R 25
Typ
50
5
3952
4
Max
Unit
k
%
K
%
T: Thermistor temperature

 1 1  RT: Thermistor value at T
 
exp B 25 / 85 

 T25 T 
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Mosfet Performance Curve
0.9
0.16
0.7
0.12
0.08
0.04
0.5
0.3
Single P ulse
0.1
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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3–6
APTM120DA30CT1G – Rev1 October, 2012
Thermal Impedance (°C/W)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
0.2
APTM120DA30CT1G
Low Voltage Output Characteristics
60
TJ=25°C
40
20
TJ=125°C
0
40
30
5V
20
4.5V
10
0
0
5
10
15
20
0
5
VDS, Drain to Source Voltage (V)
40
VGS=10V
ID=25A
ID, Drain Current (A)
20
25
30
2
1.5
1
0.5
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ <
0.5 duty cycle
30
TJ=125°C
20
TJ=25°C
10
0
25
50
75
100
125
150
0
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
TJ, Junction Temperature (°C)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
100000
12
VDS=240V
10
Ciss
C, Capacitance (pF)
ID=25A
TJ=25°C
VDS=600V
8
6
VDS=960V
4
2
0
10000
1000
Coss
Crss
100
10
0
100
200
300
400
500
600
Gate Charge (nC)
0
50
100
150
200
VDS, Drain to Source Voltage (V)
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4–6
APTM120DA30CT1G – Rev1 October, 2012
RDSon, Drain to Source ON resistance
15
Transfert Characteristics
3
2.5
10
VDS, Drain to Source Voltage (V)
Normalized RDS(on) vs. Temperature
VGS, Gate to Source Voltage
VGS=6, 7, 8 & 9V
TJ=125°C
VGS=10V
ID, Drain Current (A)
ID, Drain Current (A)
Low Voltage Output Characteristics
50
80
APTM120DA30CT1G
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.2
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
0.2
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
40
200
30
TJ=75°C
20
TJ=125°C
10
TJ=175°C
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
150
100
TJ=75°C
TJ=125°C
50
TJ=175°C
0
400
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
1200
1000
800
600
400
200
0
1
10
100
VR Reverse Voltage
1000
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5–6
APTM120DA30CT1G – Rev1 October, 2012
C, Capacitance (pF)
1400
APTM120DA30CT1G
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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6–6
APTM120DA30CT1G – Rev1 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.