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APT20M120JCU3
ISOTOP® Buck chopper
MOSFET + SiC chopper diode
Power module
VDSS = 1200V
RDSon = 560m typ @ Tj = 25°C
ID = 20A @ Tc = 25°C
Application
 AC and DC motor control
 Switched Mode Power Supplies
D
Features

G
S
 SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
A
G



A
S
Power MOS 8™ MOSFET
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
 Outstanding performance at high frequency
operation
 Stable temperature behavior
 Very rugged
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive TC of VCEsat
 RoHS Compliant
D
ISOTOP
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
1200
20
15
104
±30
672
543
14
Unit
V
A
October, 2012
ID
Parameter
Drain - Source Breakdown Voltage
V
m
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-6
APT20M120JCU3 – Rev 1
Symbol
VDSS
APT20M120JCU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Tj = 25°C
VDS =1200V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 14A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Min
3
Typ
560
4
Max
100
500
672
5
±100
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 14A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Min
Turn-off Delay Time
Fall Time
pF
300
nC
50
140
50
Resistive switching @ 25°C
VGS = 15V
VBus = 800V
ID = 14A
RG = 2.2
Rise Time
Typ
7736
715
92
31
ns
170
48
SiC chopper diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
Maximum Reverse Leakage Current
Test Conditions
VR=1200V
DC Forward Current
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
32
56
10
1.6
2.3
200
1000
VF
Diode Forward Voltage
IF = 10A
QC
Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/µs
80
C
Total Capacitance
f = 1MHz, VR = 200V
96
f = 1MHz, VR = 400V
69
Unit
V
µA
A
1.8
3
V
nC
pF
Thermal and package characteristics
RthJC
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
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Typ
2500
-40
Max
0.23
1.65
20
Unit
October, 2012
Min
Mosfet
SiC Diode
°C/W
V
150
300
1.5
29.2
°C
N.m
g
2-6
APT20M120JCU3 – Rev 1
Symbol Characteristic
APT20M120JCU3
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
Drain
Anode
30.1 (1.185)
30.3 (1.193)
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Source
Dimensions in Millimeters and (Inches)
Gate
Typical Mosfet Performance Curve
0.9
0.2
0.7
0.15
0.5
0.05
0.3
Single P ulse
0.1
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
October, 2012
0.1
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3-6
APT20M120JCU3 – Rev 1
Thermal Impedance (°C/W)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
0.25
APT20M120JCU3
Low Voltage Output Characteristics
ID, Drain Current (A)
TJ=25°C
20
TJ=125°C
10
0
TJ=125°C
25
VGS=6, 7, 8 & 9V
20
15
5V
10
4.5V
5
0
0
5
10
15
20
0
5
VDS, Drain to Source Voltage (V)
20
25
30
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ <
0.5 duty cycle
20
VGS=10V
ID=14A
ID, Drain Current (A)
2
1.5
1
0.5
0
16
TJ=125°C
12
8
TJ=25°C
4
0
25
50
75
100
125
150
0
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
TJ, Junction Temperature (°C)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
10000
12
Ciss
VDS=600V
8
6
VDS=960V
4
2
0
C, Capacitance (pF)
VDS=240V
ID=14A
TJ=25°C
10
1000
Coss
100
Crss
10
0
40
80
120 160 200 240 280 320
Gate Charge (nC)
0
50
100
150
200
VDS, Drain to Source Voltage (V)
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October, 2012
RDSon, Drain to Source ON resistance
Normalized RDS(on) vs. Temperature
VGS, Gate to Source Voltage
15
VDS, Drain to Source Voltage (V)
3
2.5
10
4-6
APT20M120JCU3 – Rev 1
ID, Drain Current (A)
VGS=10V
30
Low Voltage Output Characteristics
30
40
APT20M120JCU3
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.8
0.9
1.6
1.4
0.7
1.2
1
0.5
0.8
0.3
0.6
0.4
0.1
0.2
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
20
100
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
16
TJ=75°C
12
TJ=125°C
8
4
TJ=175°C
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
75
50
TJ=75°C
TJ=125°C
25
TJ=175°C
0
400
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
700
600
500
400
300
200
100
0
1000
October, 2012
10
100
VR Reverse Voltage
ISOTOP® is a registered trademark of ST Microelectronics NV
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5-6
APT20M120JCU3 – Rev 1
1
APT20M120JCU3
DISCLAIMER
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PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
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authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
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inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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6-6
APT20M120JCU3 – Rev 1
October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.