Document No. 001-87927 Rev. *A ECN #: 4032207 Cypress Semiconductor Product Qualification Report QTP# 023904 June 2013 INDEPENDENT CLOCK QUAD HOTLINK II FAMILY B53D-3 TECHNOLOGY, FAB 4 CYV15G0104TRB Independent Clock HOTLink II™ Serializer and Reclocking Deserializer CYV15G0203TB Independent Clock HOTLink II™ Serializer CYV15G0204RB Independent Clock HOTLink II™ Reclocking Deserializer CYV15G0204TRB Independent Clock HOTLink II™ Dual Serializer and Dual Reclocking Desirializer CYV15G0404DXB Independent Clock Quad HOTLink II™ Transceiver with Reclocker CYP15G0403DXB CYV15G0403DXB Independent Clock Quad HOTLink II™ Transceiver CYV15G0403TB Independent Clock Quad HOTLink II™ Serializer CYV15G0404RB Independent Clock Quad HOTLink II™ Reclocking Deserializer CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 12 Document No. 001-87927 Rev. *A ECN #: 4032207 PRODUCT QUALIFICATION HISTORY Qual Report 002202 New Technology, B53D-3, Fab 4, CY7B993V / CY7B994V Date Comp Mar 01 011406 New Product, Quad HOTLink II family, CYP15G0401DX/ CYP15G0402DX Oct 01 023904 7B9293 Rev. A All Layer Option on B53D technology Apr 03 040706 Rev. C Independent Hot Link/Hot Link II on B53-3RF technology Apr 04 Description of Qualification Purpose Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 12 Document No. 001-87927 Rev. *A ECN #: 4032207 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify New product CYV15G0404DXB device family in B53D-3 technology, Fab4 Marketing Part #: CYV15G0104TRB, CYV15G0203TB, CYV15G0204RB, CYV15G0204TRB, CYV15G0403TB, CYP(V)15G0403DXB, CYV15G0404DXB, CYV15G0404RB Device Description: 3.3V, Commercial and Industrial, available in 256-balls L2BGA package. Cypress Division: Cypress Semiconductor Corporation – Data Com Division (DCD) Overall Die (or Mask) REV: Rev. A What ID markings on Die: 7B9293A TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: Metal 1: 500A TiW+6,000A Al/0.5%Cu/300A TiW Metal 2: 300A TiW+8,000A Al/0.5%Cu/300A TiW Passivation Type and Materials: 1,000A TEOS + 9,000A SiN Free Phosphorus contents in top glass layer (%): 0% Number of Transistors: 362,417 Number of Gates: 90,604 Generic Process Technology/Design Rule ( -drawn): CMOS, Double Metal/0.25 Gate Oxide Material/Thickness (MOS): SiO2 55Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/B53D-3 m PACKAGE AVAILABILITY PACKAGE 256-ball L2BGA ASSEMBLY FACILITY SITE TAIWN-G Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 12 Document No. 001-87927 Rev. *A ECN #: 4032207 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: BG256L2 Cavity down 256-ball, Ball Grid Array (L2BGA) with heat sink Hysol 4450/4451 Mold Compound Flammability Rating: V-O per UL 94 Oxygen Rating Index: >28% Substrate Material: BT with copper stiffner and heat sink Lead Finish, Composition / Thickness: Solder Ball, 63%Sn, 37%Pb Die Backside Preparation Method/Metallization: N/A Die Separation Method: Wafer Saw Die Attach Supplier: QMI Die Attach Material: QMI505MT Die Attach Method: Epoxy Bond Diagram Designation 10-05171 Wire Bond Method: Thermosonic Wire Material/Size: Au,1.0um Thermal Resistance Theta JA °C: 14.1°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-41017 Name/Location of Assembly (prime) facility: ASE Taiwan (TAIWN-G) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: KYEC,Taiwan Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. 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Page 4 of 12 Document No. 001-87927 Rev. *A ECN #: 4032207 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F Dynamic Operating Condition, Vcc = 3.8V/4.0V, 125C P Dynamic Operating Condition, Vcc = 3.8V/4.0V, 125C P High Temp Steady State Life Test Static Operating Condition, Vcc = 3.63V, 125C P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity MSL 3 P High Temperature Operating Life Early Failure High Temperature Operating Life Latent Failure Rate 192 Hrs., 30C/60%RH+3IR-Reflow, 235C+5, -0C 121C, 100%RH Pressure Cooker P MIL-STD-883C, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs., 30C/60%RH+3IR-Reflow, 235C+5, -0C High Accelerated Saturation Test (HAST) 130C, 85%RH, 3.63V MIL-STD-883C, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity MSL 3 P 192 Hrs., 30C/60%RH+3IR-Reflow, 235C+5, -0C Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V P MIL-STD-883, Method 3015 JESD22, Method A114-B P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C P Age Bond Strength MIL-STD-883C, Method 2011 P High Temperature Storage 150C,No bias P Bond Pull Test MIL-STD-883 – Method 2011, Cpk : 1.33, Ppk : 1.66 P Low Temperature Operating Life -30C, 4.3V P Current Density Meets the Technology Device Level Reliability Specifications P Acoustic Microscopy, MSL 3 J-STD-020 P Dynamic Latchup Sensitivity In accordance with JESD78 P Static Latchup Sensitivity 125C, 10V, ± 300mA P In accordance with JEDEC 17 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 12 Document No. 001-87927 Rev. *A ECN #: 4032207 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Acceleration Factor3 Failure Rate High Temperature Operating Life Early Failure Rate 2,721 1 N/A N/A 367 PPM High Temperature Operating Life Long Term Failure Rate1,,2 777,690 DHRs 0 0.7 55 23 FIT 1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = .62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 12 Document No. 001-87927 Rev. *A ECN #: 4032207 Reliability Test Data QTP #: Device STRESS: Fab Lot # 002202 Assy Lot # Assy Loc Duration Samp Rej ACOUSTIC, MSL3 CY7B993V-AC 4021265 610036043 TAIWN-G COMP 15 0 CY7B994V-AC 4030964 610042957 TAIWN-G COMP 15 0 CY7B994V-AC 4030964 610045835 TAIWN-G 15 0 STRESS: COMP HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RAT, 125C, 4.0V, >VCC MAX CY7B994V-AC 4030964 610042957 TAIWN-G 96 679 0 CY7B994V-AC 4030964 610045835 TAIWN-G 96 775 0 STRESS: HIGH TEMP DYNAMIC OPERTING LIFE-LATENT FAILURE RATE, 125C, 4.0, >Vcc Max CY7B994V-AC 4030964 610042957 TAIWN-G 168 330 0 CY7B994V-AC 4030964 610042957 TAIWN-G 1000 328 0 CY7B994V-AC 4030965 610045835 TAIWN-G 168 330 0 CY7B994V-AC 4030965 610045835 TAIWN-G 1000 239 0 CY7B994V-AC 4030965 610045835 TAIWN-G 2000 239 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST, 125C, 3.63V,>Vcc Max CY7B993V-AC 4021265 610036043 TAIWN-G 168 78 0 CY7B993V-AC 4021265 610036043 TAIWN-G 336 78 0 STRESS: HIGH TEMP STORGAE, PLASTIC, 150C CY7B993V-AC 4021265 610036043 TAIWN-G 500 48 0 CY7B993V-AC 4021265 610036043 TAIWN-G 1000 48 0 STRESS: LOW TEMPERATURE OPERATING LIKE, -30C,4.3V CY7B993V-AC STRESS: 4021265 610036043 TAIWN-G 500 47 0 TAIWN-G COMP 3 0 DYNAMIC LATCH-UP TESTING 6.79V CY7B993V-AC STRESS: 4021265 610036043 ESD-CHARGE DEVICE MODEL, 500V CY7B993V-AC 4021265 610036043 TAIWN-G COMP 9 0 CY7B994V-AC 4030964 610042957 TAIWN-G COMP 9 0 CY7B994V-AC 4030964 610045835 TAIWN-G COMP 9 0 STRESS: Failure Mechanism ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7B993V-AC 4021265 610036043 TAIWN-G COMP 9 0 CY7B994V-AC 4030964 610042957 TAIWN-G COMP 9 0 CY7B994V-AC 4030964 610045835 TAIWN-G COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 12 Document No. 001-87927 Rev. *A ECN #: 4032207 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration 4021265 610036043 TAIWN-G CY7B994V-AC 4030965 610045835 TAIWN-G CY7B994V-AC 4030964 610052500 TAIWN-G Rej 610036043 TAIWN-G COMP 3 0 COMP 3 0 COMP 3 0 4021265 COMP 30 0 AGE BOND STRENGTH CY7B994V-AC 4030964 610052500 TAIWN-G COMP 15 0 CY7B994V-AC 4030965 610052501 TAIWN-G COMP 15 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CY7B993V-AC STRESS: 4021265 610036043 TAIWN-G 128 46 0 PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3 CY7B993V-AC 4021265 610036043 TAIWN-G CY7B994V-AC 4030964 610042957 TAIWN-G CY7B994V-AC 4030964 610045835 TAIWN-G STRESS: Failure Mechanism BOND PULL CY7B993V-AC STRESS: Samp STATIC LATCH-UP TESTING 125C, 10V, +/-300mA CY7B993V-AC STRESS: 002202 168 168 168 48 0 48 0 46 0 TC CONDITION C, -65C TO 150C, PRE COND. 192 HRS 30C/60% RH, MSL3 CY7B993V-AC 4021265 610036043 TAIWN-G 300 48 0 CY7B993V-AC 4021265 610036043 TAIWN-G 500 48 0 CY7B993V-AC 4021265 610036043 TAIWN-G 1000 48 0 CY7B994V-AC 4030964 610042957 TAIWN-G 300 48 0 CY7B994V-AC 4030964 610042957 TAIWN-G 500 48 0 CY7B994V-AC 4030964 610042957 TAIWN-G 1000 48 0 CY7B994V-AC 4030964 610045835 TAIWN-G 300 48 0 CY7B994V-AC 4030964 610045835 TAIWN-G 500 48 0 CY7B994V-AC 4030964 610045835 TAIWN-G 1000 48 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 12 Document No. 001-87927 Rev. *A ECN #: 4032207 Reliability Test Data QTP #: Device 011406 Fab Lot # Assy Lot # Assy Loc Duration CYP15G0401DX -BGC (7B9294A) 4048678 610111566L2 TAIWN-G COMP 15 0 CYP15G0401DX -BGC (7B9294A) 4106284 610113332 TAIWN-G COMP 15 0 CYP15G0401DX -BGC (7B9294A) 4107603 610113544L1 TAIWN-G COMP 15 0 STRESS: STRESS: Samp Rej Failure Mechanism ACOUSTIC, MSL3 HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RATE, 125C, 3.8V, >VCC MAX CYP15G0401DX -BGC (7B9294A) 4106284 610113332 TAIWN-G 96 199 0 CYP15G0401DX -BGC (7B9294A) 4106284 610122108S1 TAIWN-G 96 507 0 CYP15G0401DX BGC (7B9294A) 4107603 610122107 TAIWN-G 96 508 1 STRESS: HIGH TEMP DYNAMIC OPERTING LIFE-LATENT FAILURE RATE, 125C, 3.8, >Vcc Max CYP15G0401DX -BGC (7B9294A) 4048678 610111566L2 TAIWN-G 168 189 0 CYP15G0401DX -BGC (7B9294A) 4048678 610111566L2 TAIWN-G 2097 146 0 CYP15G0401DX -BGC (7B9294A) 4106284 610113332 TAIWN-G 168 199 0 CYP15G0401DX -BGC (7B9294A) 4106284 610113332 TAIWN-G 2016 167 0 610111566L2 TAIWN-G COMP 9 0 TAIWN-G COMP 9 0 TAIWN-G COMP 3 0 49 0 168 50 0 300 50 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CYP15G0401DX -BGC (7B9294A) STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CYP15G0401DX -BGC (7B9294A) STRESS: 4048678 610111566L2 4048678 610111566L2 TAIWN-G 128 PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3 CYP15G0401DX -BGC (7B9294A) STRESS: 610111566L2 HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CYP15G0401DX -BGC (7B9294A) STRESS: 4048678 STATIC LATCH-UP TESTING, 125C, 10V, +/-300mA CYP15G0401DX -BGC (7B9294A) STRESS: 4048678 4048678 610111566L2 TAIWN-G TC CONDITION C, -65C TO 150C, PRE COND. 192 HRS 30C/60% RH, MSL3 CYP15G0401DX -BGC (7B9294A) 4048678 610111566L2 TAIWN-G CYP15G0401DX -BGC (7B9294A) 4048678 610111566L2 TAIWN-G 500 50 0 CYP15G0401DX -BGC (7B9294A) 4048678 610111566L2 TAIWN-G 1000 50 0 CYP15G0401DX -BGC (7B9294A) 4106284 610113332 TAIWN-G 300 50 0 CYP15G0401DX BGC (7B9294A) 4106284 610113332 TAIWN-G 500 50 0 CYP15G0401DX -BGC (7B9294A) 4106284 610113332 TAIWN-G 1000 48 0 CYP15G0401DX -BGC (7B9294A) 4107603 610113544L1 TAIWN-G 300 50 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 12 BIPOLAR TRANSISTOR BREAKDOWN Document No. 001-87927 Rev. *A ECN #: 4032207 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Loc Duration Samp Rej TAIWN-G COMP 3 0 Failure Mechanism STATIC LATCH-UP TESTING, 125C, 10V, +/-300mA CYP15G0404DXB (7B9293C) STRESS: Assy Lot # 023904 4315201 610324211 TC CONDITION C, -65C TO 150C, PRE COND. 192 HRS 30C/60% RH, MSL3 CYP15G0404DXB (7B9293C) 4315201 610324211 TAIWN-G 300 47 0 CYP15G0404DXB (7B9293C) 4315201 610324211 TAIWN-G 500 47 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 12 Document No. 001-87927 Rev. *A ECN #: 4032207 Reliability Test Data QTP #: Device Fab Lot # STRESS: Assy Lot # Rej Failure Mechanism 4330065 610406937/8/9 TAIWN-G COMP 9 0 4330065 610406937/8/9 TAIWN-G COMP 9 0 COMP 3 0 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CYP15G0404DXB (7B9293C) STRESS: Samp ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CYP15G0404DXB (7B9293C) STRESS: Duration ESD-CHARGE DEVICE MODEL, 500V CYP15G0404DXB (7B9293C) STRESS: Assy Loc 040706 4330065 610406937/8/9 TAIWN-G HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RATE, 125C, 3.65V, >VCC MAX CYP15G0402DXB (7B9294C) 4322602 610331374/6 TAIWN-G 96 1003 0 CYP15G0404DXB (7B9293C) 4330065 610406937/8/9 TAIWN-G 96 504 0 STRESS: HIGH TEMP DYNAMIC OPERTING LIFE-LATENT FAILURE RATE, 125C, 3.65V, >Vcc Max CYP15G0402DXB (7B9294C) 4322602 610331374/6 TAIWN-G 168 192 0 CYP15G0404DXB (7B9293C) 4330065 610406937/8/9 TAIWN-G 168 180 0 CYP15G0404DXB (7B9293C) 4330065 610406937/8/9 TAIWN-G 500 180 0 TAIWN-G COMP 3 0 TAIWN-G COMP 3 0 STRESS: STATIC LATCH-UP TESTING, 125C, 5V, +/-300mA CYP15G0402DXB (7B9294C) STRESS: 4322602 610331374/6 STATIC LATCH-UP TESTING, 125C, 7.4V, +/-300mA CYP15G0404DXB (7B9293C) 4330065 610406937/8/9 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 12 Document No. 001-87927 Rev. *A ECN #: 4032207 Document History Page Document Title: QTP # 023904 : INDEPENDENT CLOCK QUAD HOTLINK II FAMILY B53D-3 TECHNOLOGY, FAB 4 Document Number: 001-87927 Rev. ECN Orig. of No. Change ** 4027024 ILZ Description of Change *A Changed Spec Title from QTP 011406 to QTP 023904. - QTP 011406 is intended for device 7B9294/7B9254, B53 Technology 4032207 ILZ Initial Spec Release Qualification report published on Cypress.com is documented on memo LGQ-146 in spec format. Corrected QTP Title QTP# 023904 to QTP# 011406. Initiated spec for QTP 011406 and all data from Memo LGQ-585 was transferred to qualification report spec template. Deleted package qualification details on package qualification history table. Deleted Cypress reference Spec and replaced with Industry Standards Updated package availability based on current qualified test & assembly site. 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